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Step bunching phenomena on Si(0 0 1) surface induced by DC heating during sublimation and Si deposition. / Rodyakina, E. E.; Sitnikov, S. V.; Rogilo, D. I. и др.

в: Journal of Crystal Growth, Том 520, 15.08.2019, стр. 85-88.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Rodyakina, EE, Sitnikov, SV, Rogilo, DI & Latyshev, AV 2019, 'Step bunching phenomena on Si(0 0 1) surface induced by DC heating during sublimation and Si deposition', Journal of Crystal Growth, Том. 520, стр. 85-88. https://doi.org/10.1016/j.jcrysgro.2019.05.026

APA

Rodyakina, E. E., Sitnikov, S. V., Rogilo, D. I., & Latyshev, A. V. (2019). Step bunching phenomena on Si(0 0 1) surface induced by DC heating during sublimation and Si deposition. Journal of Crystal Growth, 520, 85-88. https://doi.org/10.1016/j.jcrysgro.2019.05.026

Vancouver

Rodyakina EE, Sitnikov SV, Rogilo DI, Latyshev AV. Step bunching phenomena on Si(0 0 1) surface induced by DC heating during sublimation and Si deposition. Journal of Crystal Growth. 2019 авг. 15;520:85-88. doi: 10.1016/j.jcrysgro.2019.05.026

Author

Rodyakina, E. E. ; Sitnikov, S. V. ; Rogilo, D. I. и др. / Step bunching phenomena on Si(0 0 1) surface induced by DC heating during sublimation and Si deposition. в: Journal of Crystal Growth. 2019 ; Том 520. стр. 85-88.

BibTeX

@article{9ed92d557a624d329b0b7e4ef3485e59,
title = "Step bunching phenomena on Si(0 0 1) surface induced by DC heating during sublimation and Si deposition",
abstract = "Using in situ ultrahigh vacuum reflection electron microscopy and ex situ atomic force microscopy, we have investigated the influence Si deposition on the step bunching on the Si(0 0 1) surface under direct current (DC) sample heating in 950–1150 °C temperature range. During sublimation time scaling exponents of the average distance between the bunches are about 0.3 for both step-up and step-down DC directions at all temperatures. We have found that the shape of the step bunches becomes straight, and the number of step pairs between the bunches increases at a temperature above 1050 °C for fixed annealing time. We have established that the step bunching rate during step-up DC heating is characterized by 0.24 eV effective activation energy under sublimation conditions. The mean bunch separation changes non-monotonically when net growth rate (R) rises and it decreases as R−1/2 near equilibrium conditions.",
keywords = "A1. Mass transfer, A1. Morphological stability, A1.Electromigration, A1.Surface processes, B2.Semiconducting silicon, Morphological stability, ALTERNATION, SI(111), DRIFT, Mass transfer, INSTABILITIES, Electromigration, MOTION, GROWTH, Semiconducting silicon, DIFFUSION, Surface processes, MORPHOLOGY",
author = "Rodyakina, {E. E.} and Sitnikov, {S. V.} and Rogilo, {D. I.} and Latyshev, {A. V.}",
year = "2019",
month = aug,
day = "15",
doi = "10.1016/j.jcrysgro.2019.05.026",
language = "English",
volume = "520",
pages = "85--88",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Step bunching phenomena on Si(0 0 1) surface induced by DC heating during sublimation and Si deposition

AU - Rodyakina, E. E.

AU - Sitnikov, S. V.

AU - Rogilo, D. I.

AU - Latyshev, A. V.

PY - 2019/8/15

Y1 - 2019/8/15

N2 - Using in situ ultrahigh vacuum reflection electron microscopy and ex situ atomic force microscopy, we have investigated the influence Si deposition on the step bunching on the Si(0 0 1) surface under direct current (DC) sample heating in 950–1150 °C temperature range. During sublimation time scaling exponents of the average distance between the bunches are about 0.3 for both step-up and step-down DC directions at all temperatures. We have found that the shape of the step bunches becomes straight, and the number of step pairs between the bunches increases at a temperature above 1050 °C for fixed annealing time. We have established that the step bunching rate during step-up DC heating is characterized by 0.24 eV effective activation energy under sublimation conditions. The mean bunch separation changes non-monotonically when net growth rate (R) rises and it decreases as R−1/2 near equilibrium conditions.

AB - Using in situ ultrahigh vacuum reflection electron microscopy and ex situ atomic force microscopy, we have investigated the influence Si deposition on the step bunching on the Si(0 0 1) surface under direct current (DC) sample heating in 950–1150 °C temperature range. During sublimation time scaling exponents of the average distance between the bunches are about 0.3 for both step-up and step-down DC directions at all temperatures. We have found that the shape of the step bunches becomes straight, and the number of step pairs between the bunches increases at a temperature above 1050 °C for fixed annealing time. We have established that the step bunching rate during step-up DC heating is characterized by 0.24 eV effective activation energy under sublimation conditions. The mean bunch separation changes non-monotonically when net growth rate (R) rises and it decreases as R−1/2 near equilibrium conditions.

KW - A1. Mass transfer

KW - A1. Morphological stability

KW - A1.Electromigration

KW - A1.Surface processes

KW - B2.Semiconducting silicon

KW - Morphological stability

KW - ALTERNATION

KW - SI(111)

KW - DRIFT

KW - Mass transfer

KW - INSTABILITIES

KW - Electromigration

KW - MOTION

KW - GROWTH

KW - Semiconducting silicon

KW - DIFFUSION

KW - Surface processes

KW - MORPHOLOGY

UR - http://www.scopus.com/inward/record.url?scp=85066076413&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2019.05.026

DO - 10.1016/j.jcrysgro.2019.05.026

M3 - Article

AN - SCOPUS:85066076413

VL - 520

SP - 85

EP - 88

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -

ID: 20157357