Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Stable resistive switching in VO2 films synthesized on mazy-like h-BCN nanowalls/Si(1 0 0) substrates. / Kapoguzov, K. E.; Mutilin, S. V.; Belaya, S. V. и др.
в: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Том 321, 118511, 11.2025.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Stable resistive switching in VO2 films synthesized on mazy-like h-BCN nanowalls/Si(1 0 0) substrates
AU - Kapoguzov, K. E.
AU - Mutilin, S. V.
AU - Belaya, S. V.
AU - Kichay, V. N.
AU - Yakovkina, L. V.
AU - Korolkov, I. V.
AU - Saraev, A. A.
AU - Kosinova, M. L.
N1 - This work was supported by the Ministry of Science and Higher Education of the Russian Federation . Some of SEM images were obtained with equipment at the Center of collective usage \u201CNanostructures\u201D of Rzhanov Institute of Semiconductor Physics of Siberian Branch of Russian Academy of Science.
PY - 2025/11
Y1 - 2025/11
N2 - Two-terminal resistive switches based on vanadium dioxide are considered as promising functional devices in oxide electronics. However, resistive switches based on polycrystalline films cannot withstand long-term switching cycles. In this work, we propose a novel heterostructures of vanadium dioxide thin films synthesized on vertically oriented mazy-like boron carbonitride nanowalls. A resistance jump of more than three orders of magnitude during the temperature phase transition in vanadium dioxide was obtained for all formed structures. We demonstrated that vanadium dioxide films grown on vertical nanowalls exhibit a more than two orders of magnitude higher number of stable resistive switches, compared to films synthesized on well-studied silicon substrates. The number of stable switching increases from 4 × 107 to 2 × 109 with the increasing height of boron carbon nitride nanowalls from 50 to 400 nm. The studies suggest that the proposed heterostructures are promising for the development of stable and long-life functional electronic and optoelectronic devices.
AB - Two-terminal resistive switches based on vanadium dioxide are considered as promising functional devices in oxide electronics. However, resistive switches based on polycrystalline films cannot withstand long-term switching cycles. In this work, we propose a novel heterostructures of vanadium dioxide thin films synthesized on vertically oriented mazy-like boron carbonitride nanowalls. A resistance jump of more than three orders of magnitude during the temperature phase transition in vanadium dioxide was obtained for all formed structures. We demonstrated that vanadium dioxide films grown on vertical nanowalls exhibit a more than two orders of magnitude higher number of stable resistive switches, compared to films synthesized on well-studied silicon substrates. The number of stable switching increases from 4 × 107 to 2 × 109 with the increasing height of boron carbon nitride nanowalls from 50 to 400 nm. The studies suggest that the proposed heterostructures are promising for the development of stable and long-life functional electronic and optoelectronic devices.
KW - Boron carbonitride
KW - Chemical vapor deposition
KW - Phase-change materials
KW - Resistive switching
KW - Vanadium dioxide
KW - Vertical nanowalls
UR - https://www.mendeley.com/catalogue/a4f68b1e-8143-3838-9833-ec65fe787c9d/
UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-105008213687&origin=inward&txGid=234e796513852623d605a470204a7c85
U2 - 10.1016/j.mseb.2025.118511
DO - 10.1016/j.mseb.2025.118511
M3 - Article
VL - 321
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
M1 - 118511
ER -
ID: 68149511