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Sputtering of silicon by atomic and cluster bismuth ions : An influence of projectile nuclearity and specific kinetic energy on the sputter yield. / Tolstogouzov, A.; Mazarov, P.; Ieshkin, A. E. и др.

в: Vacuum, Том 188, 110188, 06.2021.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Tolstogouzov, A, Mazarov, P, Ieshkin, AE, Belykh, SF, Korobeishchikov, NG, Pelenovich, VO & Fu, DJ 2021, 'Sputtering of silicon by atomic and cluster bismuth ions: An influence of projectile nuclearity and specific kinetic energy on the sputter yield', Vacuum, Том. 188, 110188. https://doi.org/10.1016/j.vacuum.2021.110188

APA

Tolstogouzov, A., Mazarov, P., Ieshkin, A. E., Belykh, S. F., Korobeishchikov, N. G., Pelenovich, V. O., & Fu, D. J. (2021). Sputtering of silicon by atomic and cluster bismuth ions: An influence of projectile nuclearity and specific kinetic energy on the sputter yield. Vacuum, 188, [110188]. https://doi.org/10.1016/j.vacuum.2021.110188

Vancouver

Tolstogouzov A, Mazarov P, Ieshkin AE, Belykh SF, Korobeishchikov NG, Pelenovich VO и др. Sputtering of silicon by atomic and cluster bismuth ions: An influence of projectile nuclearity and specific kinetic energy on the sputter yield. Vacuum. 2021 июнь;188:110188. doi: 10.1016/j.vacuum.2021.110188

Author

Tolstogouzov, A. ; Mazarov, P. ; Ieshkin, A. E. и др. / Sputtering of silicon by atomic and cluster bismuth ions : An influence of projectile nuclearity and specific kinetic energy on the sputter yield. в: Vacuum. 2021 ; Том 188.

BibTeX

@article{4f6ae65e4b6b404d97604cc3b3ca25d6,
title = "Sputtering of silicon by atomic and cluster bismuth ions: An influence of projectile nuclearity and specific kinetic energy on the sputter yield",
abstract = "An influence of the specific kinetic energy Esp and nuclearity n of Bin+ (n = 1–4) projectiles on the sputter yield of Si was studied by means of the volume loss method. It was found that the specific sputter yield Ysp exhibited non-additive increase with an increasing of n and Esp values. As a non-additivity k-factor, the slope of the straight line approximating Ysp(n) dependences at the same specific energy was proposed to use. For Bin+ (n = 1–4) projectiles at Esp = 10 keV at−1 the k-factor was equal to 0.41 ± 0.08. In addition, it was ascertained that the efficiency of energy transfer from projectiles to target atoms increased with an increase in the projectile nuclearity, e.g., it was 2.8 times greater for Bi3+ bombarding ions as compared with Bi+ ones.",
keywords = "Bismuth, Liquid metal alloy ion source (LMAIS), Non-additive sputtering, Silicon, Sputter yield, Volume loss method",
author = "A. Tolstogouzov and P. Mazarov and Ieshkin, {A. E.} and Belykh, {S. F.} and Korobeishchikov, {N. G.} and Pelenovich, {V. O.} and Fu, {D. J.}",
note = "Funding Information: This work was partly supported by the Ministry of Education and Science of the Russian Federation in the frame of the state assignment FSSN-2020-0003 . Publisher Copyright: {\textcopyright} 2021 Elsevier Ltd Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2021",
month = jun,
doi = "10.1016/j.vacuum.2021.110188",
language = "English",
volume = "188",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Ltd",

}

RIS

TY - JOUR

T1 - Sputtering of silicon by atomic and cluster bismuth ions

T2 - An influence of projectile nuclearity and specific kinetic energy on the sputter yield

AU - Tolstogouzov, A.

AU - Mazarov, P.

AU - Ieshkin, A. E.

AU - Belykh, S. F.

AU - Korobeishchikov, N. G.

AU - Pelenovich, V. O.

AU - Fu, D. J.

N1 - Funding Information: This work was partly supported by the Ministry of Education and Science of the Russian Federation in the frame of the state assignment FSSN-2020-0003 . Publisher Copyright: © 2021 Elsevier Ltd Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/6

Y1 - 2021/6

N2 - An influence of the specific kinetic energy Esp and nuclearity n of Bin+ (n = 1–4) projectiles on the sputter yield of Si was studied by means of the volume loss method. It was found that the specific sputter yield Ysp exhibited non-additive increase with an increasing of n and Esp values. As a non-additivity k-factor, the slope of the straight line approximating Ysp(n) dependences at the same specific energy was proposed to use. For Bin+ (n = 1–4) projectiles at Esp = 10 keV at−1 the k-factor was equal to 0.41 ± 0.08. In addition, it was ascertained that the efficiency of energy transfer from projectiles to target atoms increased with an increase in the projectile nuclearity, e.g., it was 2.8 times greater for Bi3+ bombarding ions as compared with Bi+ ones.

AB - An influence of the specific kinetic energy Esp and nuclearity n of Bin+ (n = 1–4) projectiles on the sputter yield of Si was studied by means of the volume loss method. It was found that the specific sputter yield Ysp exhibited non-additive increase with an increasing of n and Esp values. As a non-additivity k-factor, the slope of the straight line approximating Ysp(n) dependences at the same specific energy was proposed to use. For Bin+ (n = 1–4) projectiles at Esp = 10 keV at−1 the k-factor was equal to 0.41 ± 0.08. In addition, it was ascertained that the efficiency of energy transfer from projectiles to target atoms increased with an increase in the projectile nuclearity, e.g., it was 2.8 times greater for Bi3+ bombarding ions as compared with Bi+ ones.

KW - Bismuth

KW - Liquid metal alloy ion source (LMAIS)

KW - Non-additive sputtering

KW - Silicon

KW - Sputter yield

KW - Volume loss method

UR - http://www.scopus.com/inward/record.url?scp=85102595178&partnerID=8YFLogxK

U2 - 10.1016/j.vacuum.2021.110188

DO - 10.1016/j.vacuum.2021.110188

M3 - Article

AN - SCOPUS:85102595178

VL - 188

JO - Vacuum

JF - Vacuum

SN - 0042-207X

M1 - 110188

ER -

ID: 28090268