Standard

Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6. / Klimovskikh, I. I.; Sostina, D.; Petukhov, A. и др.

в: Scientific Reports, Том 7, 45797, 05.04.2017, стр. 45797.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Klimovskikh, II, Sostina, D, Petukhov, A, Rybkin, AG, Eremeev, SV, Chulkov, EV, Tereshchenko, OE, Kokh, KA & Shikin, AM 2017, 'Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6', Scientific Reports, Том. 7, 45797, стр. 45797. https://doi.org/10.1038/srep45797

APA

Klimovskikh, I. I., Sostina, D., Petukhov, A., Rybkin, A. G., Eremeev, S. V., Chulkov, E. V., Tereshchenko, O. E., Kokh, K. A., & Shikin, A. M. (2017). Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6. Scientific Reports, 7, 45797. [45797]. https://doi.org/10.1038/srep45797

Vancouver

Klimovskikh II, Sostina D, Petukhov A, Rybkin AG, Eremeev SV, Chulkov EV и др. Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6. Scientific Reports. 2017 апр. 5;7:45797. 45797. doi: 10.1038/srep45797

Author

Klimovskikh, I. I. ; Sostina, D. ; Petukhov, A. и др. / Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6. в: Scientific Reports. 2017 ; Том 7. стр. 45797.

BibTeX

@article{a1620e03674b4d0f8f59e473caf56599,
title = "Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6",
abstract = "Two-and three-dimensional topological insulators are the key materials for the future nanoelectronic and spintronic devices and quantum computers. By means of angle-and spin-resolved photoemission spectroscopy we study the electronic and spin structure of the Bi-bilayer/3D topological insulator in quantum tunneling regime formed under the short annealing of Bi2Te2.4Se0.6. Owing to the temperature-induced restructuring of the topological insulator's surface quintuple layers, the hole-like spin-split Bi-bilayer bands and the parabolic electronic-like state are observed instead of the Dirac cone. Scanning Tunneling Microscopy and X-ray Photoemission Spectroscopy measurements reveal the appearance of the Bi2 terraces at the surface under the annealing. The experimental results are supported by density functional theory calculations, predicting the spin-polarized Bi-bilayer bands interacting with the quintuple-layers-derived states. Such an easily formed heterostructure promises exciting applications in spin transport devices and low-energy electronics.",
keywords = "BI2TE3, BILAYER, STATES, SURFACE",
author = "Klimovskikh, {I. I.} and D. Sostina and A. Petukhov and Rybkin, {A. G.} and Eremeev, {S. V.} and Chulkov, {E. V.} and Tereshchenko, {O. E.} and Kokh, {K. A.} and Shikin, {A. M.}",
year = "2017",
month = apr,
day = "5",
doi = "10.1038/srep45797",
language = "English",
volume = "7",
pages = "45797",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

RIS

TY - JOUR

T1 - Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6

AU - Klimovskikh, I. I.

AU - Sostina, D.

AU - Petukhov, A.

AU - Rybkin, A. G.

AU - Eremeev, S. V.

AU - Chulkov, E. V.

AU - Tereshchenko, O. E.

AU - Kokh, K. A.

AU - Shikin, A. M.

PY - 2017/4/5

Y1 - 2017/4/5

N2 - Two-and three-dimensional topological insulators are the key materials for the future nanoelectronic and spintronic devices and quantum computers. By means of angle-and spin-resolved photoemission spectroscopy we study the electronic and spin structure of the Bi-bilayer/3D topological insulator in quantum tunneling regime formed under the short annealing of Bi2Te2.4Se0.6. Owing to the temperature-induced restructuring of the topological insulator's surface quintuple layers, the hole-like spin-split Bi-bilayer bands and the parabolic electronic-like state are observed instead of the Dirac cone. Scanning Tunneling Microscopy and X-ray Photoemission Spectroscopy measurements reveal the appearance of the Bi2 terraces at the surface under the annealing. The experimental results are supported by density functional theory calculations, predicting the spin-polarized Bi-bilayer bands interacting with the quintuple-layers-derived states. Such an easily formed heterostructure promises exciting applications in spin transport devices and low-energy electronics.

AB - Two-and three-dimensional topological insulators are the key materials for the future nanoelectronic and spintronic devices and quantum computers. By means of angle-and spin-resolved photoemission spectroscopy we study the electronic and spin structure of the Bi-bilayer/3D topological insulator in quantum tunneling regime formed under the short annealing of Bi2Te2.4Se0.6. Owing to the temperature-induced restructuring of the topological insulator's surface quintuple layers, the hole-like spin-split Bi-bilayer bands and the parabolic electronic-like state are observed instead of the Dirac cone. Scanning Tunneling Microscopy and X-ray Photoemission Spectroscopy measurements reveal the appearance of the Bi2 terraces at the surface under the annealing. The experimental results are supported by density functional theory calculations, predicting the spin-polarized Bi-bilayer bands interacting with the quintuple-layers-derived states. Such an easily formed heterostructure promises exciting applications in spin transport devices and low-energy electronics.

KW - BI2TE3

KW - BILAYER

KW - STATES

KW - SURFACE

UR - http://www.scopus.com/inward/record.url?scp=85017120701&partnerID=8YFLogxK

U2 - 10.1038/srep45797

DO - 10.1038/srep45797

M3 - Article

C2 - 28378826

AN - SCOPUS:85017120701

VL - 7

SP - 45797

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 45797

ER -

ID: 10042405