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Spin and electronic structure of the topological insulator Bi1.5Sb0.5Te1.8Se1.2. / Filianina, M. V.; Klimovskikh, I. I.; Shvets, I. A. и др.

в: Materials Chemistry and Physics, Том 207, 01.03.2018, стр. 253-258.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Filianina, MV, Klimovskikh, II, Shvets, IA, Rybkin, AG, Petukhov, AE, Chulkov, EV, Golyashov, VA, Kokh, KA, Tereshchenko, OE, Polley, C, Balasubramanian, T, Leandersson, M & Shikin, AM 2018, 'Spin and electronic structure of the topological insulator Bi1.5Sb0.5Te1.8Se1.2', Materials Chemistry and Physics, Том. 207, стр. 253-258. https://doi.org/10.1016/j.matchemphys.2017.12.035

APA

Filianina, M. V., Klimovskikh, I. I., Shvets, I. A., Rybkin, A. G., Petukhov, A. E., Chulkov, E. V., Golyashov, V. A., Kokh, K. A., Tereshchenko, O. E., Polley, C., Balasubramanian, T., Leandersson, M., & Shikin, A. M. (2018). Spin and electronic structure of the topological insulator Bi1.5Sb0.5Te1.8Se1.2. Materials Chemistry and Physics, 207, 253-258. https://doi.org/10.1016/j.matchemphys.2017.12.035

Vancouver

Filianina MV, Klimovskikh II, Shvets IA, Rybkin AG, Petukhov AE, Chulkov EV и др. Spin and electronic structure of the topological insulator Bi1.5Sb0.5Te1.8Se1.2. Materials Chemistry and Physics. 2018 март 1;207:253-258. doi: 10.1016/j.matchemphys.2017.12.035

Author

Filianina, M. V. ; Klimovskikh, I. I. ; Shvets, I. A. и др. / Spin and electronic structure of the topological insulator Bi1.5Sb0.5Te1.8Se1.2. в: Materials Chemistry and Physics. 2018 ; Том 207. стр. 253-258.

BibTeX

@article{3e0c2f3409834516a702d4330b7f27d4,
title = "Spin and electronic structure of the topological insulator Bi1.5Sb0.5Te1.8Se1.2",
abstract = "Electronic and spin structure of the Dirac-cone-like topological surface and valence band states were studied experimentally and theoretically for topological insulator with fractional stoichiometry Bi1.5Sb0.5Te1.8Se1.2 which is considered as one of the best candidates for efficient spin-polarized current generation. By means of spin- and angle-resolved photoelectron spectroscopy we demonstrate the separation of the Dirac point from the bulk states and the helical spin structure of the Dirac cone. For the freshly cleaved surface the Fermi level is located in the bulk band gap and an exposure in residual gases shifts the Fermi level towards the bulk conduction band. Results of the theoretical calculations are in a good agreement with the experimental data. Surface morphology study shows a well-structured atomically sharp surface after cleavage. The transport measurements confirm that this topological insulator has relatively high resistance with semiconductor-like temperature dependence at low temperatures. The studied Bi1.5Sb0.5Te1.8Se1.2 crystals demonstrated a quite large Seebeck coefficient values reaching −400 μV/K at room temperature.",
keywords = "ARPES, Electronic structure, Topological insulators, SURFACE, BI2SE3, LAYER",
author = "Filianina, {M. V.} and Klimovskikh, {I. I.} and Shvets, {I. A.} and Rybkin, {A. G.} and Petukhov, {A. E.} and Chulkov, {E. V.} and Golyashov, {V. A.} and Kokh, {K. A.} and Tereshchenko, {O. E.} and C. Polley and T. Balasubramanian and M. Leandersson and Shikin, {A. M.}",
note = "Publisher Copyright: {\textcopyright} 2017",
year = "2018",
month = mar,
day = "1",
doi = "10.1016/j.matchemphys.2017.12.035",
language = "English",
volume = "207",
pages = "253--258",
journal = "Materials Chemistry and Physics",
issn = "0254-0584",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Spin and electronic structure of the topological insulator Bi1.5Sb0.5Te1.8Se1.2

AU - Filianina, M. V.

AU - Klimovskikh, I. I.

AU - Shvets, I. A.

AU - Rybkin, A. G.

AU - Petukhov, A. E.

AU - Chulkov, E. V.

AU - Golyashov, V. A.

AU - Kokh, K. A.

AU - Tereshchenko, O. E.

AU - Polley, C.

AU - Balasubramanian, T.

AU - Leandersson, M.

AU - Shikin, A. M.

N1 - Publisher Copyright: © 2017

PY - 2018/3/1

Y1 - 2018/3/1

N2 - Electronic and spin structure of the Dirac-cone-like topological surface and valence band states were studied experimentally and theoretically for topological insulator with fractional stoichiometry Bi1.5Sb0.5Te1.8Se1.2 which is considered as one of the best candidates for efficient spin-polarized current generation. By means of spin- and angle-resolved photoelectron spectroscopy we demonstrate the separation of the Dirac point from the bulk states and the helical spin structure of the Dirac cone. For the freshly cleaved surface the Fermi level is located in the bulk band gap and an exposure in residual gases shifts the Fermi level towards the bulk conduction band. Results of the theoretical calculations are in a good agreement with the experimental data. Surface morphology study shows a well-structured atomically sharp surface after cleavage. The transport measurements confirm that this topological insulator has relatively high resistance with semiconductor-like temperature dependence at low temperatures. The studied Bi1.5Sb0.5Te1.8Se1.2 crystals demonstrated a quite large Seebeck coefficient values reaching −400 μV/K at room temperature.

AB - Electronic and spin structure of the Dirac-cone-like topological surface and valence band states were studied experimentally and theoretically for topological insulator with fractional stoichiometry Bi1.5Sb0.5Te1.8Se1.2 which is considered as one of the best candidates for efficient spin-polarized current generation. By means of spin- and angle-resolved photoelectron spectroscopy we demonstrate the separation of the Dirac point from the bulk states and the helical spin structure of the Dirac cone. For the freshly cleaved surface the Fermi level is located in the bulk band gap and an exposure in residual gases shifts the Fermi level towards the bulk conduction band. Results of the theoretical calculations are in a good agreement with the experimental data. Surface morphology study shows a well-structured atomically sharp surface after cleavage. The transport measurements confirm that this topological insulator has relatively high resistance with semiconductor-like temperature dependence at low temperatures. The studied Bi1.5Sb0.5Te1.8Se1.2 crystals demonstrated a quite large Seebeck coefficient values reaching −400 μV/K at room temperature.

KW - ARPES

KW - Electronic structure

KW - Topological insulators

KW - SURFACE

KW - BI2SE3

KW - LAYER

UR - http://www.scopus.com/inward/record.url?scp=85041488706&partnerID=8YFLogxK

U2 - 10.1016/j.matchemphys.2017.12.035

DO - 10.1016/j.matchemphys.2017.12.035

M3 - Article

AN - SCOPUS:85041488706

VL - 207

SP - 253

EP - 258

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

SN - 0254-0584

ER -

ID: 10427240