Standard

Simulation of charge transport in micro and nanoscale FETs with elements having different dielectric properties. / Blokhin, A. M.; Kruglova, E. A.; Semisalov, B. V.

в: Journal of Physics: Conference Series, Том 993, № 1, 012035, 10.04.2018.

Результаты исследований: Научные публикации в периодических изданиях › статья по материалам конференции › Рецензирование

Harvard

Blokhin, AM, Kruglova, EA & Semisalov, BV 2018, 'Simulation of charge transport in micro and nanoscale FETs with elements having different dielectric properties', Journal of Physics: Conference Series, Том. 993, № 1, 012035. https://doi.org/10.1088/1742-6596/993/1/012035

APA

Blokhin, A. M., Kruglova, E. A., & Semisalov, B. V. (2018). Simulation of charge transport in micro and nanoscale FETs with elements having different dielectric properties. Journal of Physics: Conference Series, 993(1), [012035]. https://doi.org/10.1088/1742-6596/993/1/012035

Vancouver

Blokhin AM, Kruglova EA, Semisalov BV. Simulation of charge transport in micro and nanoscale FETs with elements having different dielectric properties. Journal of Physics: Conference Series. 2018 апр. 10;993(1):012035. doi: 10.1088/1742-6596/993/1/012035

Author

Blokhin, A. M. ; Kruglova, E. A. ; Semisalov, B. V. / Simulation of charge transport in micro and nanoscale FETs with elements having different dielectric properties. в: Journal of Physics: Conference Series. 2018 ; Том 993, № 1.

BibTeX

@article{402848350c094fc4a4a4d58ee4d8bf68,
title = "Simulation of charge transport in micro and nanoscale FETs with elements having different dielectric properties",
abstract = "The hydrodynamical model is used for description of the process of charge transport in semiconductors with a high rate of reliability. It is a set of nonlinear partial differential equations with small parameters and specific conditions at the boundaries of field effect transistors (FETs), which essentially complicates the process of finding its stationary solutions. To overcome these difficulties in the case of FETs with elements having different dielectric properties, a fast pseudospectral method has been developed. This method was used for advanced numerical simulation of charge transport in DG-MOSFET.",
keywords = "PARABOLIC BAND TRANSPORT, HYDRODYNAMICAL MODEL, MOMENT EQUATIONS, SEMICONDUCTORS, CLOSURE",
author = "Blokhin, {A. M.} and Kruglova, {E. A.} and Semisalov, {B. V.}",
note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 ; Conference date: 27-11-2017 Through 01-12-2017",
year = "2018",
month = apr,
day = "10",
doi = "10.1088/1742-6596/993/1/012035",
language = "English",
volume = "993",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Simulation of charge transport in micro and nanoscale FETs with elements having different dielectric properties

AU - Blokhin, A. M.

AU - Kruglova, E. A.

AU - Semisalov, B. V.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2018/4/10

Y1 - 2018/4/10

N2 - The hydrodynamical model is used for description of the process of charge transport in semiconductors with a high rate of reliability. It is a set of nonlinear partial differential equations with small parameters and specific conditions at the boundaries of field effect transistors (FETs), which essentially complicates the process of finding its stationary solutions. To overcome these difficulties in the case of FETs with elements having different dielectric properties, a fast pseudospectral method has been developed. This method was used for advanced numerical simulation of charge transport in DG-MOSFET.

AB - The hydrodynamical model is used for description of the process of charge transport in semiconductors with a high rate of reliability. It is a set of nonlinear partial differential equations with small parameters and specific conditions at the boundaries of field effect transistors (FETs), which essentially complicates the process of finding its stationary solutions. To overcome these difficulties in the case of FETs with elements having different dielectric properties, a fast pseudospectral method has been developed. This method was used for advanced numerical simulation of charge transport in DG-MOSFET.

KW - PARABOLIC BAND TRANSPORT

KW - HYDRODYNAMICAL MODEL

KW - MOMENT EQUATIONS

KW - SEMICONDUCTORS

KW - CLOSURE

UR - http://www.scopus.com/inward/record.url?scp=85046087239&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/993/1/012035

DO - 10.1088/1742-6596/993/1/012035

M3 - Conference article

AN - SCOPUS:85046087239

VL - 993

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012035

T2 - 19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017

Y2 - 27 November 2017 through 1 December 2017

ER -

ID: 12916622