Silicon-Based Nanoheterostructures With Quantum Dots › Обзор исследований

Standard

Silicon-Based Nanoheterostructures With Quantum Dots. / Dvurechenskii, Anatoliy V.; Yakimov, A. I.

Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. ред. / AV Latyshev; AV Dvurechenskii; AL Aseev. Elsevier Science Inc., 2017. стр. 59-99.

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › глава/раздел › научная › Рецензирование

Harvard

Dvurechenskii, AV & Yakimov, AI 2017, Silicon-Based Nanoheterostructures With Quantum Dots. в AV Latyshev, AV Dvurechenskii & AL Aseev (ред.), Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Inc., стр. 59-99. https://doi.org/10.1016/B978-0-12-810512-2.00004-4

APA

Dvurechenskii, A. V., & Yakimov, A. I. (2017). Silicon-Based Nanoheterostructures With Quantum Dots. в AV. Latyshev, AV. Dvurechenskii, & AL. Aseev (Ред.), Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications (стр. 59-99). Elsevier Science Inc.. https://doi.org/10.1016/B978-0-12-810512-2.00004-4

Vancouver

Dvurechenskii AV, Yakimov AI. Silicon-Based Nanoheterostructures With Quantum Dots. в Latyshev AV, Dvurechenskii AV, Aseev AL, Редакторы, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Inc. 2017. стр. 59-99 doi: 10.1016/B978-0-12-810512-2.00004-4

Author

Dvurechenskii, Anatoliy V. ; Yakimov, A. I. / Silicon-Based Nanoheterostructures With Quantum Dots. Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Редактор / AV Latyshev ; AV Dvurechenskii ; AL Aseev. Elsevier Science Inc., 2017. стр. 59-99

BibTeX

@inbook{6a5afedb2b484502a0bc12584710415e,

title = "Silicon-Based Nanoheterostructures With Quantum Dots",

abstract = "This review describes recent developments in fabrication of self-assembled Ge/Si quantum dot heterostructures with molecular beam epitaxy, quantum-dot electronic configuration, charge transport, optical, and spin phenomena. We are focusing on the fundamental aspects and device applications of the dots with small (~10.nm) sizes.",

keywords = "Electronic configuration, Energy spectrum, Heterostructures, Infrared photodetectors, Localization, Quantum dots, Spin phenomena, PULSED IRRADIATION, GE/SI HETEROSTRUCTURES, COULOMB INTERACTION, LOW-ENERGY IONS, ARRAYS, LAYERS, INFRARED PHOTODETECTORS, HOPPING CONDUCTION, GROWTH, STRUCTURAL-PROPERTIES",

author = "Dvurechenskii, {Anatoliy V.} and Yakimov, {A. I.}",

year = "2017",

month = jan,

day = "1",

doi = "10.1016/B978-0-12-810512-2.00004-4",

language = "English",

isbn = "9780128105122",

pages = "59--99",

editor = "AV Latyshev and AV Dvurechenskii and AL Aseev",

booktitle = "Advances in Semiconductor Nanostructures",

publisher = "Elsevier Science Inc.",

address = "United States",

}

RIS

TY - CHAP

T1 - Silicon-Based Nanoheterostructures With Quantum Dots

AU - Dvurechenskii, Anatoliy V.

AU - Yakimov, A. I.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - This review describes recent developments in fabrication of self-assembled Ge/Si quantum dot heterostructures with molecular beam epitaxy, quantum-dot electronic configuration, charge transport, optical, and spin phenomena. We are focusing on the fundamental aspects and device applications of the dots with small (~10.nm) sizes.

AB - This review describes recent developments in fabrication of self-assembled Ge/Si quantum dot heterostructures with molecular beam epitaxy, quantum-dot electronic configuration, charge transport, optical, and spin phenomena. We are focusing on the fundamental aspects and device applications of the dots with small (~10.nm) sizes.

KW - Electronic configuration

KW - Energy spectrum

KW - Heterostructures

KW - Infrared photodetectors

KW - Localization

KW - Quantum dots

KW - Spin phenomena

KW - PULSED IRRADIATION

KW - GE/SI HETEROSTRUCTURES

KW - COULOMB INTERACTION

KW - LOW-ENERGY IONS

KW - ARRAYS

KW - LAYERS

KW - INFRARED PHOTODETECTORS

KW - HOPPING CONDUCTION

KW - GROWTH

KW - STRUCTURAL-PROPERTIES

UR - http://www.scopus.com/inward/record.url?scp=85022197044&partnerID=8YFLogxK

U2 - 10.1016/B978-0-12-810512-2.00004-4

DO - 10.1016/B978-0-12-810512-2.00004-4

M3 - Chapter

SN - 9780128105122

SP - 59

EP - 99

BT - Advances in Semiconductor Nanostructures

A2 - Latyshev, AV

A2 - Dvurechenskii, AV

A2 - Aseev, AL

PB - Elsevier Science Inc.

ER -

ID: 21787345