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Silicon-Based Nanoheterostructures With Quantum Dots. / Dvurechenskii, Anatoliy V.; Yakimov, A. I.
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. ред. / AV Latyshev; AV Dvurechenskii; AL Aseev. Elsevier Science Publishing Company, Inc., 2017. стр. 59-99 (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).
Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › глава/раздел › научная › Рецензирование
Harvard
Dvurechenskii, AV & Yakimov, AI 2017,
Silicon-Based Nanoheterostructures With Quantum Dots. в AV Latyshev, AV Dvurechenskii & AL Aseev (ред.),
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications, Elsevier Science Publishing Company, Inc., стр. 59-99.
https://doi.org/10.1016/B978-0-12-810512-2.00004-4
APA
Dvurechenskii, A. V., & Yakimov, A. I. (2017).
Silicon-Based Nanoheterostructures With Quantum Dots. в AV. Latyshev, AV. Dvurechenskii, & AL. Aseev (Ред.),
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications (стр. 59-99). (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications). Elsevier Science Publishing Company, Inc..
https://doi.org/10.1016/B978-0-12-810512-2.00004-4
Vancouver
Dvurechenskii AV, Yakimov AI.
Silicon-Based Nanoheterostructures With Quantum Dots. в Latyshev AV, Dvurechenskii AV, Aseev AL, Редакторы, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Publishing Company, Inc. 2017. стр. 59-99. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications). doi: 10.1016/B978-0-12-810512-2.00004-4
Author
Dvurechenskii, Anatoliy V. ; Yakimov, A. I. /
Silicon-Based Nanoheterostructures With Quantum Dots. Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Редактор / AV Latyshev ; AV Dvurechenskii ; AL Aseev. Elsevier Science Publishing Company, Inc., 2017. стр. 59-99 (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).
BibTeX
@inbook{6a5afedb2b484502a0bc12584710415e,
title = "Silicon-Based Nanoheterostructures With Quantum Dots",
abstract = "This review describes recent developments in fabrication of self-assembled Ge/Si quantum dot heterostructures with molecular beam epitaxy, quantum-dot electronic configuration, charge transport, optical, and spin phenomena. We are focusing on the fundamental aspects and device applications of the dots with small (~10.nm) sizes.",
keywords = "Electronic configuration, Energy spectrum, Heterostructures, Infrared photodetectors, Localization, Quantum dots, Spin phenomena, PULSED IRRADIATION, GE/SI HETEROSTRUCTURES, COULOMB INTERACTION, LOW-ENERGY IONS, ARRAYS, LAYERS, INFRARED PHOTODETECTORS, HOPPING CONDUCTION, GROWTH, STRUCTURAL-PROPERTIES",
author = "Dvurechenskii, {Anatoliy V.} and Yakimov, {A. I.}",
note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Inc. All rights reserved.",
year = "2017",
month = jan,
day = "1",
doi = "10.1016/B978-0-12-810512-2.00004-4",
language = "English",
isbn = "9780128105122",
series = "Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications",
publisher = "Elsevier Science Publishing Company, Inc.",
pages = "59--99",
editor = "AV Latyshev and AV Dvurechenskii and AL Aseev",
booktitle = "Advances in Semiconductor Nanostructures",
address = "Netherlands",
}
RIS
TY - CHAP
T1 - Silicon-Based Nanoheterostructures With Quantum Dots
AU - Dvurechenskii, Anatoliy V.
AU - Yakimov, A. I.
N1 - Publisher Copyright:
© 2017 Elsevier Inc. All rights reserved.
PY - 2017/1/1
Y1 - 2017/1/1
N2 - This review describes recent developments in fabrication of self-assembled Ge/Si quantum dot heterostructures with molecular beam epitaxy, quantum-dot electronic configuration, charge transport, optical, and spin phenomena. We are focusing on the fundamental aspects and device applications of the dots with small (~10.nm) sizes.
AB - This review describes recent developments in fabrication of self-assembled Ge/Si quantum dot heterostructures with molecular beam epitaxy, quantum-dot electronic configuration, charge transport, optical, and spin phenomena. We are focusing on the fundamental aspects and device applications of the dots with small (~10.nm) sizes.
KW - Electronic configuration
KW - Energy spectrum
KW - Heterostructures
KW - Infrared photodetectors
KW - Localization
KW - Quantum dots
KW - Spin phenomena
KW - PULSED IRRADIATION
KW - GE/SI HETEROSTRUCTURES
KW - COULOMB INTERACTION
KW - LOW-ENERGY IONS
KW - ARRAYS
KW - LAYERS
KW - INFRARED PHOTODETECTORS
KW - HOPPING CONDUCTION
KW - GROWTH
KW - STRUCTURAL-PROPERTIES
UR - http://www.scopus.com/inward/record.url?scp=85022197044&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/436f141d-b15f-362a-b662-7bb29f3ab18f/
U2 - 10.1016/B978-0-12-810512-2.00004-4
DO - 10.1016/B978-0-12-810512-2.00004-4
M3 - Chapter
SN - 9780128105122
T3 - Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications
SP - 59
EP - 99
BT - Advances in Semiconductor Nanostructures
A2 - Latyshev, AV
A2 - Dvurechenskii, AV
A2 - Aseev, AL
PB - Elsevier Science Publishing Company, Inc.
ER -
