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Silicide phase formation by Mg deposition on amorphous Si. Ab initio calculations, growth process and thermal stability. / Dotsenko, S. A.; Luniakov, Yu V.; Gouralnik, A. S. и др.

в: Journal of Alloys and Compounds, Том 778, 25.03.2019, стр. 514-521.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Dotsenko, SA, Luniakov, YV, Gouralnik, AS, Gutakovskii, AK & Galkin, NG 2019, 'Silicide phase formation by Mg deposition on amorphous Si. Ab initio calculations, growth process and thermal stability', Journal of Alloys and Compounds, Том. 778, стр. 514-521. https://doi.org/10.1016/j.jallcom.2018.11.225

APA

Dotsenko, S. A., Luniakov, Y. V., Gouralnik, A. S., Gutakovskii, A. K., & Galkin, N. G. (2019). Silicide phase formation by Mg deposition on amorphous Si. Ab initio calculations, growth process and thermal stability. Journal of Alloys and Compounds, 778, 514-521. https://doi.org/10.1016/j.jallcom.2018.11.225

Vancouver

Dotsenko SA, Luniakov YV, Gouralnik AS, Gutakovskii AK, Galkin NG. Silicide phase formation by Mg deposition on amorphous Si. Ab initio calculations, growth process and thermal stability. Journal of Alloys and Compounds. 2019 март 25;778:514-521. doi: 10.1016/j.jallcom.2018.11.225

Author

Dotsenko, S. A. ; Luniakov, Yu V. ; Gouralnik, A. S. и др. / Silicide phase formation by Mg deposition on amorphous Si. Ab initio calculations, growth process and thermal stability. в: Journal of Alloys and Compounds. 2019 ; Том 778. стр. 514-521.

BibTeX

@article{047e885331a94adfb0fbe22c12ab339a,
title = "Silicide phase formation by Mg deposition on amorphous Si. Ab initio calculations, growth process and thermal stability",
abstract = "Formation of magnesium silicides on amorphous silicon by deposition of Mg at room temperature is studied by electron energy loss spectroscopy, differential reflectance spectroscopy and high resolution transmission electron microscopy. Optimal crystal structures of Mg silicides under high pressure are found by ab initio DFT calculations. These structures are related to the particular minima of enthalpy. Dielectric functions are calculated for these structures. The transitions from the cubic phase c-Mg2Si to orthorhombic o-Mg2Si at 5.6 GPa and then from o-Mg2Si to hexagonal h-Mg2Si at 22.3 GPa are predicted using the USPEX code. The experimental spectra and the data obtained from the calculated dielectric functions are mutually consistent. Optical reflectance is suitable for monitoring the growth and transformations of the phases during experiments. During Mg deposition onto amorphous Si, the o-Mg2Si phase forms first, then the c-Mg2Si phase grows upon it. The observed sequence of phase formation is related with the compression stress arising in the depth of the Mg-Si mixture.",
keywords = "Ab initio calculations, Electron energy loss spectroscopy, High resolution transmission electron spectroscopy, Optical reflection spectroscopy, Solid state reactions, Thin films, OPTICAL-PROPERTIES, PRINCIPLES, MG2SI, ELECTRONIC-STRUCTURES, PRESSURE, SPECTROSCOPY, TRANSITIONS, GE",
author = "Dotsenko, {S. A.} and Luniakov, {Yu V.} and Gouralnik, {A. S.} and Gutakovskii, {A. K.} and Galkin, {N. G.}",
note = "Publisher Copyright: {\textcopyright} 2018",
year = "2019",
month = mar,
day = "25",
doi = "10.1016/j.jallcom.2018.11.225",
language = "English",
volume = "778",
pages = "514--521",
journal = "Journal of Alloys and Compounds",
issn = "0925-8388",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Silicide phase formation by Mg deposition on amorphous Si. Ab initio calculations, growth process and thermal stability

AU - Dotsenko, S. A.

AU - Luniakov, Yu V.

AU - Gouralnik, A. S.

AU - Gutakovskii, A. K.

AU - Galkin, N. G.

N1 - Publisher Copyright: © 2018

PY - 2019/3/25

Y1 - 2019/3/25

N2 - Formation of magnesium silicides on amorphous silicon by deposition of Mg at room temperature is studied by electron energy loss spectroscopy, differential reflectance spectroscopy and high resolution transmission electron microscopy. Optimal crystal structures of Mg silicides under high pressure are found by ab initio DFT calculations. These structures are related to the particular minima of enthalpy. Dielectric functions are calculated for these structures. The transitions from the cubic phase c-Mg2Si to orthorhombic o-Mg2Si at 5.6 GPa and then from o-Mg2Si to hexagonal h-Mg2Si at 22.3 GPa are predicted using the USPEX code. The experimental spectra and the data obtained from the calculated dielectric functions are mutually consistent. Optical reflectance is suitable for monitoring the growth and transformations of the phases during experiments. During Mg deposition onto amorphous Si, the o-Mg2Si phase forms first, then the c-Mg2Si phase grows upon it. The observed sequence of phase formation is related with the compression stress arising in the depth of the Mg-Si mixture.

AB - Formation of magnesium silicides on amorphous silicon by deposition of Mg at room temperature is studied by electron energy loss spectroscopy, differential reflectance spectroscopy and high resolution transmission electron microscopy. Optimal crystal structures of Mg silicides under high pressure are found by ab initio DFT calculations. These structures are related to the particular minima of enthalpy. Dielectric functions are calculated for these structures. The transitions from the cubic phase c-Mg2Si to orthorhombic o-Mg2Si at 5.6 GPa and then from o-Mg2Si to hexagonal h-Mg2Si at 22.3 GPa are predicted using the USPEX code. The experimental spectra and the data obtained from the calculated dielectric functions are mutually consistent. Optical reflectance is suitable for monitoring the growth and transformations of the phases during experiments. During Mg deposition onto amorphous Si, the o-Mg2Si phase forms first, then the c-Mg2Si phase grows upon it. The observed sequence of phase formation is related with the compression stress arising in the depth of the Mg-Si mixture.

KW - Ab initio calculations

KW - Electron energy loss spectroscopy

KW - High resolution transmission electron spectroscopy

KW - Optical reflection spectroscopy

KW - Solid state reactions

KW - Thin films

KW - OPTICAL-PROPERTIES

KW - PRINCIPLES

KW - MG2SI

KW - ELECTRONIC-STRUCTURES

KW - PRESSURE

KW - SPECTROSCOPY

KW - TRANSITIONS

KW - GE

UR - http://www.scopus.com/inward/record.url?scp=85056795836&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2018.11.225

DO - 10.1016/j.jallcom.2018.11.225

M3 - Article

AN - SCOPUS:85056795836

VL - 778

SP - 514

EP - 521

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

ER -

ID: 17472325