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Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime. / Akimov, A. N.; Akhundov, I. O.; Ishchenko, D. V. и др.

в: Semiconductors, Том 54, № 8, 01.08.2020, стр. 951-955.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Akimov, AN, Akhundov, IO, Ishchenko, DV, Klimov, AE, Neizvestny, IG, Paschin, NS, Suprun, SP, Tarasov, AS, Tereshchenko, OE, Fedosenko, EV & Sherstyakova, VN 2020, 'Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime', Semiconductors, Том. 54, № 8, стр. 951-955. https://doi.org/10.1134/S1063782620080035

APA

Akimov, A. N., Akhundov, I. O., Ishchenko, D. V., Klimov, A. E., Neizvestny, I. G., Paschin, N. S., Suprun, S. P., Tarasov, A. S., Tereshchenko, O. E., Fedosenko, E. V., & Sherstyakova, V. N. (2020). Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime. Semiconductors, 54(8), 951-955. https://doi.org/10.1134/S1063782620080035

Vancouver

Akimov AN, Akhundov IO, Ishchenko DV, Klimov AE, Neizvestny IG, Paschin NS и др. Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime. Semiconductors. 2020 авг. 1;54(8):951-955. doi: 10.1134/S1063782620080035

Author

Akimov, A. N. ; Akhundov, I. O. ; Ishchenko, D. V. и др. / Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime. в: Semiconductors. 2020 ; Том 54, № 8. стр. 951-955.

BibTeX

@article{63d251a4e6ed41d6bbca8a21459a47ed,
title = "Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime",
abstract = "The dependence of the photoconductivity sign on the bias voltage, intensity, and duration of illumination is studied for PbSnTe:In films in the space-charge-limited current regime. The role of traps (including surface ones) with a complex energy spectrum in the effects under observation is discussed.",
keywords = "impurity states, PbSnTe, photoconductivity, surface states",
author = "Akimov, {A. N.} and Akhundov, {I. O.} and Ishchenko, {D. V.} and Klimov, {A. E.} and Neizvestny, {I. G.} and Paschin, {N. S.} and Suprun, {S. P.} and Tarasov, {A. S.} and Tereshchenko, {O. E.} and Fedosenko, {E. V.} and Sherstyakova, {V. N.}",
year = "2020",
month = aug,
day = "1",
doi = "10.1134/S1063782620080035",
language = "English",
volume = "54",
pages = "951--955",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "8",

}

RIS

TY - JOUR

T1 - Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime

AU - Akimov, A. N.

AU - Akhundov, I. O.

AU - Ishchenko, D. V.

AU - Klimov, A. E.

AU - Neizvestny, I. G.

AU - Paschin, N. S.

AU - Suprun, S. P.

AU - Tarasov, A. S.

AU - Tereshchenko, O. E.

AU - Fedosenko, E. V.

AU - Sherstyakova, V. N.

PY - 2020/8/1

Y1 - 2020/8/1

N2 - The dependence of the photoconductivity sign on the bias voltage, intensity, and duration of illumination is studied for PbSnTe:In films in the space-charge-limited current regime. The role of traps (including surface ones) with a complex energy spectrum in the effects under observation is discussed.

AB - The dependence of the photoconductivity sign on the bias voltage, intensity, and duration of illumination is studied for PbSnTe:In films in the space-charge-limited current regime. The role of traps (including surface ones) with a complex energy spectrum in the effects under observation is discussed.

KW - impurity states

KW - PbSnTe

KW - photoconductivity

KW - surface states

UR - http://www.scopus.com/inward/record.url?scp=85089101582&partnerID=8YFLogxK

U2 - 10.1134/S1063782620080035

DO - 10.1134/S1063782620080035

M3 - Article

AN - SCOPUS:85089101582

VL - 54

SP - 951

EP - 955

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 8

ER -

ID: 24949748