TY - JOUR

T1 - SiC formation on the carbon nanotube decorated with silicon nanoparticles

AU - Zavorin, A. V.

AU - Kuznetsov, V. L.

AU - Moseenkov, S. I.

AU - Selyutin, A. G.

AU - Ishchenko, A. V.

AU - Tsendsuren, Tsog Ochir

N1 - This work was supported by the Ministry of Science and Higher Education of the Russian Federation within the governmental order for Boreskov Institute of Catalysis (project АААА-А21-121011390054-1 ). The studies were carried out using facilities of the shared research center “National center of investigation of catalysts” at Boreskov Institute of Catalysis. The work was done at the shared research center SSTRC on the basis of the VEPP-4 - VEPP-2000 complex at BINP SB RAS. The authors are grateful to A.N. Serkova for the SEM characterization of MWCNT-Si composites, A.B. Ayupov for determining the specific surface area of MWCNT-Si composites, and V.A. Volodin for the Raman spectroscopy study of MWCNT-Si composites. Публикация для корректировки.

PY - 2023/8

Y1 - 2023/8

N2 - Ex situ methods (TEM, XRD, and Raman spectroscopy) have been used to study the processes occurring at the multi-walled carbon nanotube/silicon interfaces (MWCNT/Si) during heat treatment of MWCNT-Si composites containing highly dispersed Si particles deposited on the surface of MWCNTs by CVD method. It has been established that during heat treatment, starting from 900 °C, the formation of SiC particles occurs. A further increase in temperature leads to the formation of polycrystalline SiC particles and a significant shortening of MWCNTs due to the reaction between Si particles and the surface of MWCNTs. It is shown that one can control the size of the formed SiC crystallites by varying the time and temperature of heat treatment. The kinetic dependences of the SiC formation process were studied within the Avrami-Erofeev model. The activation energy for the formation of SiC is estimated at 470 kJ/mol. The influence of heat treatment on the electrical conductivity and porosity of MWCNT-Si composites in the pressure range of 25–175 MPa has been studied.

AB - Ex situ methods (TEM, XRD, and Raman spectroscopy) have been used to study the processes occurring at the multi-walled carbon nanotube/silicon interfaces (MWCNT/Si) during heat treatment of MWCNT-Si composites containing highly dispersed Si particles deposited on the surface of MWCNTs by CVD method. It has been established that during heat treatment, starting from 900 °C, the formation of SiC particles occurs. A further increase in temperature leads to the formation of polycrystalline SiC particles and a significant shortening of MWCNTs due to the reaction between Si particles and the surface of MWCNTs. It is shown that one can control the size of the formed SiC crystallites by varying the time and temperature of heat treatment. The kinetic dependences of the SiC formation process were studied within the Avrami-Erofeev model. The activation energy for the formation of SiC is estimated at 470 kJ/mol. The influence of heat treatment on the electrical conductivity and porosity of MWCNT-Si composites in the pressure range of 25–175 MPa has been studied.

KW - Avrami-Erofeev model

KW - Composite

KW - Electrical conductivity

KW - Multi-walled carbon nanotube

KW - Silicon carbide (SiC)

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85163785228&origin=inward&txGid=09373ee19cd2a4dd1a30a2d4622c7cc2

UR - https://www.mendeley.com/catalogue/6f2ea465-cedc-318f-829d-65b1d405a60f/

U2 - 10.1016/j.diamond.2023.110113

DO - 10.1016/j.diamond.2023.110113

M3 - Article

VL - 137

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

M1 - 110113

ER -