Standard

Ranges of 10–350 keV H and H2 ions in (1 1 1) diamond. / Popov, V. P.; Ilnitskii, M. A.; Pokhil, G. P. и др.

в: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Том 406, 01.09.2017, стр. 634-637.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Popov, VP, Ilnitskii, MA, Pokhil, GP, Titov, AI, Karaseov, PA, Karabeshkin, KV, Pal'yanov, YN & Rubanov, S 2017, 'Ranges of 10–350 keV H and H2 ions in (1 1 1) diamond', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Том. 406, стр. 634-637. https://doi.org/10.1016/j.nimb.2016.12.020

APA

Popov, V. P., Ilnitskii, M. A., Pokhil, G. P., Titov, A. I., Karaseov, P. A., Karabeshkin, K. V., Pal'yanov, Y. N., & Rubanov, S. (2017). Ranges of 10–350 keV H and H2 ions in (1 1 1) diamond. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 406, 634-637. https://doi.org/10.1016/j.nimb.2016.12.020

Vancouver

Popov VP, Ilnitskii MA, Pokhil GP, Titov AI, Karaseov PA, Karabeshkin KV и др. Ranges of 10–350 keV H and H2 ions in (1 1 1) diamond. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2017 сент. 1;406:634-637. doi: 10.1016/j.nimb.2016.12.020

Author

Popov, V. P. ; Ilnitskii, M. A. ; Pokhil, G. P. и др. / Ranges of 10–350 keV H and H2 ions in (1 1 1) diamond. в: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2017 ; Том 406. стр. 634-637.

BibTeX

@article{cd3190fdc36c4338be45a234845f76d2,
title = "Ranges of 10–350 keV H and H2 ions in (1 1 1) diamond",
abstract = "Understanding of the implantation process of the hydrogen ions into diamond is of great technological interest for the fabrication of the color centers required for quantum computing and sensing applications. Here, the hydrogen range and defect-depth distribution in (1 1 1) HPHT diamond irradiated with 10–350 keV/proton H+ and H2+ ions in non channeling direction are experimentally measured by means of cross-section transmission electron microscopy (X-TEM) and secondary ion mass spectroscopy (SIMS). Surface morphology was studied by atomic force microscopy. It is found that the proton ranges at energies below 100 keV are significantly (more than 50%) underestimated in TRIM simulations whereas measured profiles coincide well with simulated ones at ion energies above 100 keV. The difference at low energies is due to approximations used in TRIM code. First is overestimation of electron energy losses. In addition, binary collision approximation and/or ZBL potential in this energy range are not suitable for proton stopping in diamond.",
keywords = "Damage formation, Diamond, Ion implantation, Monte Carlo simulation, Proton range, TRIM, IMPLANTATION, NITROGEN-VACANCY CENTERS",
author = "Popov, {V. P.} and Ilnitskii, {M. A.} and Pokhil, {G. P.} and Titov, {A. I.} and Karaseov, {P. A.} and Karabeshkin, {K. V.} and Pal'yanov, {Yu N.} and S. Rubanov",
year = "2017",
month = sep,
day = "1",
doi = "10.1016/j.nimb.2016.12.020",
language = "English",
volume = "406",
pages = "634--637",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Ranges of 10–350 keV H and H2 ions in (1 1 1) diamond

AU - Popov, V. P.

AU - Ilnitskii, M. A.

AU - Pokhil, G. P.

AU - Titov, A. I.

AU - Karaseov, P. A.

AU - Karabeshkin, K. V.

AU - Pal'yanov, Yu N.

AU - Rubanov, S.

PY - 2017/9/1

Y1 - 2017/9/1

N2 - Understanding of the implantation process of the hydrogen ions into diamond is of great technological interest for the fabrication of the color centers required for quantum computing and sensing applications. Here, the hydrogen range and defect-depth distribution in (1 1 1) HPHT diamond irradiated with 10–350 keV/proton H+ and H2+ ions in non channeling direction are experimentally measured by means of cross-section transmission electron microscopy (X-TEM) and secondary ion mass spectroscopy (SIMS). Surface morphology was studied by atomic force microscopy. It is found that the proton ranges at energies below 100 keV are significantly (more than 50%) underestimated in TRIM simulations whereas measured profiles coincide well with simulated ones at ion energies above 100 keV. The difference at low energies is due to approximations used in TRIM code. First is overestimation of electron energy losses. In addition, binary collision approximation and/or ZBL potential in this energy range are not suitable for proton stopping in diamond.

AB - Understanding of the implantation process of the hydrogen ions into diamond is of great technological interest for the fabrication of the color centers required for quantum computing and sensing applications. Here, the hydrogen range and defect-depth distribution in (1 1 1) HPHT diamond irradiated with 10–350 keV/proton H+ and H2+ ions in non channeling direction are experimentally measured by means of cross-section transmission electron microscopy (X-TEM) and secondary ion mass spectroscopy (SIMS). Surface morphology was studied by atomic force microscopy. It is found that the proton ranges at energies below 100 keV are significantly (more than 50%) underestimated in TRIM simulations whereas measured profiles coincide well with simulated ones at ion energies above 100 keV. The difference at low energies is due to approximations used in TRIM code. First is overestimation of electron energy losses. In addition, binary collision approximation and/or ZBL potential in this energy range are not suitable for proton stopping in diamond.

KW - Damage formation

KW - Diamond

KW - Ion implantation

KW - Monte Carlo simulation

KW - Proton range

KW - TRIM

KW - IMPLANTATION

KW - NITROGEN-VACANCY CENTERS

UR - http://www.scopus.com/inward/record.url?scp=85009433256&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2016.12.020

DO - 10.1016/j.nimb.2016.12.020

M3 - Article

AN - SCOPUS:85009433256

VL - 406

SP - 634

EP - 637

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

ER -

ID: 25723357