TY - JOUR

T1 - Quantum states in disordered media. II. Spatial charge carrier distribution

AU - Nenashev, A. V.

AU - Baranovskii, S. D.

AU - Meerholz, K.

AU - Gebhard, F.

N1 - A.V.N. thanks the Faculty of Physics of the Philipps Universität Marburg for the kind hospitality during his research stay. S.D.B. and K.M. acknowledge financial support by the Deutsche Forschungsgemeinschaft (Research Training Group “TIDE,” RTG2591) as well as by the key profile area “Quantum Matter and Materials (QM2)” at the University of Cologne. K.M. further acknowledges support by the DFG through the project ASTRAL (Grant No. ME1246-42). Публикация для корректировки.

PY - 2023/2/1

Y1 - 2023/2/1

N2 - The space- and temperature-dependent electron distribution n(r,T) is essential for the theoretical description of the optoelectronic properties of disordered semiconductors. We present two powerful techniques to access n(r,T) without solving the Schrödinger equation. First, we derive the density for nondegenerate electrons by applying the Hamiltonian recursively to random wave functions (RWF). Second, we obtain a temperature-dependent effective potential from the application of a universal low-pass filter (ULF) to the random potential acting on the charge carriers in disordered media. Thereby, the full quantum-mechanical problem is reduced to the quasiclassical description of n(r,T) in an effective potential. We numerically verify both approaches by comparison with the exact quantum-mechanical solution. Both approaches prove superior to the widely used localization landscape theory (LLT) when we compare our approximate results for the charge carrier density and mobility at elevated temperatures obtained by RWF, ULF, and LLT with those from the exact solution of the Schrödinger equation.

AB - The space- and temperature-dependent electron distribution n(r,T) is essential for the theoretical description of the optoelectronic properties of disordered semiconductors. We present two powerful techniques to access n(r,T) without solving the Schrödinger equation. First, we derive the density for nondegenerate electrons by applying the Hamiltonian recursively to random wave functions (RWF). Second, we obtain a temperature-dependent effective potential from the application of a universal low-pass filter (ULF) to the random potential acting on the charge carriers in disordered media. Thereby, the full quantum-mechanical problem is reduced to the quasiclassical description of n(r,T) in an effective potential. We numerically verify both approaches by comparison with the exact quantum-mechanical solution. Both approaches prove superior to the widely used localization landscape theory (LLT) when we compare our approximate results for the charge carrier density and mobility at elevated temperatures obtained by RWF, ULF, and LLT with those from the exact solution of the Schrödinger equation.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85144742791&origin=inward&txGid=f5a367d5f5a46dd07f1748d69b077e45

UR - https://www.mendeley.com/catalogue/594339b1-17db-3bf7-bef6-46c2fa8ddf3b/

U2 - 10.1103/PhysRevB.107.064207

DO - 10.1103/PhysRevB.107.064207

M3 - Article

VL - 107

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 6

M1 - 064207

ER -