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Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge. / Zinovieva, A. F.; Zinovyev, V. A.; Nenashev, A. V. и др.

в: Scientific Reports, Том 10, № 1, 9308, 09.06.2020.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Zinovieva, AF, Zinovyev, VA, Nenashev, AV, Teys, SA, Dvurechenskii, AV, Borodavchenko, OM, Zhivulko, VD & Mudryi, AV 2020, 'Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge', Scientific Reports, Том. 10, № 1, 9308. https://doi.org/10.1038/s41598-020-64098-x

APA

Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Teys, S. A., Dvurechenskii, A. V., Borodavchenko, O. M., Zhivulko, V. D., & Mudryi, A. V. (2020). Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge. Scientific Reports, 10(1), [9308]. https://doi.org/10.1038/s41598-020-64098-x

Vancouver

Zinovieva AF, Zinovyev VA, Nenashev AV, Teys SA, Dvurechenskii AV, Borodavchenko OM и др. Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge. Scientific Reports. 2020 июнь 9;10(1):9308. doi: 10.1038/s41598-020-64098-x

Author

Zinovieva, A. F. ; Zinovyev, V. A. ; Nenashev, A. V. и др. / Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge. в: Scientific Reports. 2020 ; Том 10, № 1.

BibTeX

@article{670e048656fb4bcba3ec77a3abe241c0,
title = "Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge",
abstract = "The photoluminescence (PL) of the combined Ge/Si structures representing a combination of large (200–250 nm) GeSi disk-like quantum dots (nanodisks) and four-layered stacks of compact groups of smaller (30 nm) quantum dots grown in the strain field of nanodisks was studied. The multiple increase in the PL intensity was achieved by the variation of parameters of vertically aligned quantum dot groups. The experimental results were analyzed on the basis of calculations of energy spectra, electron and hole wave functions. It was found that the quantum dot arrangement in compact groups provides the effective electron localization in Δx,y-valleys with an almost equal probability of finding an electron in the Si spacer and Ge barrier. As a result, the main channels of radiative recombination in the structures under study correspond to spatially direct optical transitions.",
keywords = "SELF-ASSEMBLED ISLANDS, EMISSION, ELECTROLUMINESCENCE, SI",
author = "Zinovieva, {A. F.} and Zinovyev, {V. A.} and Nenashev, {A. V.} and Teys, {S. A.} and Dvurechenskii, {A. V.} and Borodavchenko, {O. M.} and Zhivulko, {V. D.} and Mudryi, {A. V.}",
note = "Publisher Copyright: {\textcopyright} 2020, The Author(s). Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2020",
month = jun,
day = "9",
doi = "10.1038/s41598-020-64098-x",
language = "English",
volume = "10",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
number = "1",

}

RIS

TY - JOUR

T1 - Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge

AU - Zinovieva, A. F.

AU - Zinovyev, V. A.

AU - Nenashev, A. V.

AU - Teys, S. A.

AU - Dvurechenskii, A. V.

AU - Borodavchenko, O. M.

AU - Zhivulko, V. D.

AU - Mudryi, A. V.

N1 - Publisher Copyright: © 2020, The Author(s). Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/6/9

Y1 - 2020/6/9

N2 - The photoluminescence (PL) of the combined Ge/Si structures representing a combination of large (200–250 nm) GeSi disk-like quantum dots (nanodisks) and four-layered stacks of compact groups of smaller (30 nm) quantum dots grown in the strain field of nanodisks was studied. The multiple increase in the PL intensity was achieved by the variation of parameters of vertically aligned quantum dot groups. The experimental results were analyzed on the basis of calculations of energy spectra, electron and hole wave functions. It was found that the quantum dot arrangement in compact groups provides the effective electron localization in Δx,y-valleys with an almost equal probability of finding an electron in the Si spacer and Ge barrier. As a result, the main channels of radiative recombination in the structures under study correspond to spatially direct optical transitions.

AB - The photoluminescence (PL) of the combined Ge/Si structures representing a combination of large (200–250 nm) GeSi disk-like quantum dots (nanodisks) and four-layered stacks of compact groups of smaller (30 nm) quantum dots grown in the strain field of nanodisks was studied. The multiple increase in the PL intensity was achieved by the variation of parameters of vertically aligned quantum dot groups. The experimental results were analyzed on the basis of calculations of energy spectra, electron and hole wave functions. It was found that the quantum dot arrangement in compact groups provides the effective electron localization in Δx,y-valleys with an almost equal probability of finding an electron in the Si spacer and Ge barrier. As a result, the main channels of radiative recombination in the structures under study correspond to spatially direct optical transitions.

KW - SELF-ASSEMBLED ISLANDS

KW - EMISSION

KW - ELECTROLUMINESCENCE

KW - SI

UR - http://www.scopus.com/inward/record.url?scp=85086151202&partnerID=8YFLogxK

U2 - 10.1038/s41598-020-64098-x

DO - 10.1038/s41598-020-64098-x

M3 - Article

C2 - 32518243

AN - SCOPUS:85086151202

VL - 10

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 9308

ER -

ID: 24471352