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Photoluminescence excitation study of split-vacancy centers in diamond. / Ekimov, E. A.; Sherin, P. S.; Krivobok, V. S. и др.

в: Physical Review B, Том 97, № 4, 045206, 17.01.2018.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Ekimov, EA, Sherin, PS, Krivobok, VS, Lyapin, SG, Gavva, VA & Kondrin, MV 2018, 'Photoluminescence excitation study of split-vacancy centers in diamond', Physical Review B, Том. 97, № 4, 045206. https://doi.org/10.1103/PhysRevB.97.045206

APA

Ekimov, E. A., Sherin, P. S., Krivobok, V. S., Lyapin, S. G., Gavva, V. A., & Kondrin, M. V. (2018). Photoluminescence excitation study of split-vacancy centers in diamond. Physical Review B, 97(4), [045206]. https://doi.org/10.1103/PhysRevB.97.045206

Vancouver

Ekimov EA, Sherin PS, Krivobok VS, Lyapin SG, Gavva VA, Kondrin MV. Photoluminescence excitation study of split-vacancy centers in diamond. Physical Review B. 2018 янв. 17;97(4):045206. doi: 10.1103/PhysRevB.97.045206

Author

Ekimov, E. A. ; Sherin, P. S. ; Krivobok, V. S. и др. / Photoluminescence excitation study of split-vacancy centers in diamond. в: Physical Review B. 2018 ; Том 97, № 4.

BibTeX

@article{e092380beae0472994e3797f6b730880,
title = "Photoluminescence excitation study of split-vacancy centers in diamond",
abstract = "Two known representatives of the split-vacancy complexes in diamond, the negatively charged silicon-vacancy SiV- and recently discovered germanium-vacancy GeV- defects, were comparatively studied for their photoluminescence (PL) and complementary optical absorption spectra. The observed strong difference between luminescence and absorption spectra indicates a strong frequency defect, that is the difference of binding energies of impurity atom in the ground and excited electronic states, in these color centers. The presence of frequency defect is well supported by first-principle calculations. The obtained results accompanied with isotopic effects shed light on the structure of these centers in the ground and excited electronic states that would open the doorway to their theoretical description.",
keywords = "COLOR-CENTERS, HIGH-PRESSURES, GERMANIUM, IMPURITY, FILMS, CATHODOLUMINESCENCE, NANOPHOTONICS, DEFECTS, SPECTRA, EPR",
author = "Ekimov, {E. A.} and Sherin, {P. S.} and Krivobok, {V. S.} and Lyapin, {S. G.} and Gavva, {V. A.} and Kondrin, {M. V.}",
year = "2018",
month = jan,
day = "17",
doi = "10.1103/PhysRevB.97.045206",
language = "English",
volume = "97",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "4",

}

RIS

TY - JOUR

T1 - Photoluminescence excitation study of split-vacancy centers in diamond

AU - Ekimov, E. A.

AU - Sherin, P. S.

AU - Krivobok, V. S.

AU - Lyapin, S. G.

AU - Gavva, V. A.

AU - Kondrin, M. V.

PY - 2018/1/17

Y1 - 2018/1/17

N2 - Two known representatives of the split-vacancy complexes in diamond, the negatively charged silicon-vacancy SiV- and recently discovered germanium-vacancy GeV- defects, were comparatively studied for their photoluminescence (PL) and complementary optical absorption spectra. The observed strong difference between luminescence and absorption spectra indicates a strong frequency defect, that is the difference of binding energies of impurity atom in the ground and excited electronic states, in these color centers. The presence of frequency defect is well supported by first-principle calculations. The obtained results accompanied with isotopic effects shed light on the structure of these centers in the ground and excited electronic states that would open the doorway to their theoretical description.

AB - Two known representatives of the split-vacancy complexes in diamond, the negatively charged silicon-vacancy SiV- and recently discovered germanium-vacancy GeV- defects, were comparatively studied for their photoluminescence (PL) and complementary optical absorption spectra. The observed strong difference between luminescence and absorption spectra indicates a strong frequency defect, that is the difference of binding energies of impurity atom in the ground and excited electronic states, in these color centers. The presence of frequency defect is well supported by first-principle calculations. The obtained results accompanied with isotopic effects shed light on the structure of these centers in the ground and excited electronic states that would open the doorway to their theoretical description.

KW - COLOR-CENTERS

KW - HIGH-PRESSURES

KW - GERMANIUM

KW - IMPURITY

KW - FILMS

KW - CATHODOLUMINESCENCE

KW - NANOPHOTONICS

KW - DEFECTS

KW - SPECTRA

KW - EPR

UR - http://www.scopus.com/inward/record.url?scp=85040971252&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.97.045206

DO - 10.1103/PhysRevB.97.045206

M3 - Article

AN - SCOPUS:85040971252

VL - 97

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 4

M1 - 045206

ER -

ID: 9328013