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Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors. / Baranovskii, S. D.; Nenashev, A. V.; Oelerich, J. O. и др.

в: EPL, Том 127, № 5, 57004, 01.09.2019.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Baranovskii, SD, Nenashev, AV, Oelerich, JO, Greiner, SHM, Dvurechenskii, AV & Gebhard, F 2019, 'Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors', EPL, Том. 127, № 5, 57004. https://doi.org/10.1209/0295-5075/127/57004

APA

Baranovskii, S. D., Nenashev, A. V., Oelerich, J. O., Greiner, S. H. M., Dvurechenskii, A. V., & Gebhard, F. (2019). Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors. EPL, 127(5), [57004]. https://doi.org/10.1209/0295-5075/127/57004

Vancouver

Baranovskii SD, Nenashev AV, Oelerich JO, Greiner SHM, Dvurechenskii AV, Gebhard F. Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors. EPL. 2019 сент. 1;127(5):57004. doi: 10.1209/0295-5075/127/57004

Author

Baranovskii, S. D. ; Nenashev, A. V. ; Oelerich, J. O. и др. / Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors. в: EPL. 2019 ; Том 127, № 5.

BibTeX

@article{aeb38bdd28dd4491b7c942b3cb41c742,
title = "Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors",
abstract = "Charge transport in amorphous oxide semiconductors is often described as the band transport affected by disorder in the form of random potential barriers (RB). Theoretical studies in the framework of this approach neglected so far the percolation nature of the phenomenon. In this article, a recipe for theoretical description of charge transport in the RB model is formulated using percolation arguments. Comparison with the results published so far evidences the superiority of the percolation approach.",
keywords = "CONDUCTIVITY",
author = "Baranovskii, {S. D.} and Nenashev, {A. V.} and Oelerich, {J. O.} and Greiner, {S. H.M.} and Dvurechenskii, {A. V.} and F. Gebhard",
year = "2019",
month = sep,
day = "1",
doi = "10.1209/0295-5075/127/57004",
language = "English",
volume = "127",
journal = "Europhysics Letters",
issn = "0295-5075",
publisher = "IOP Publishing Ltd.",
number = "5",

}

RIS

TY - JOUR

T1 - Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors

AU - Baranovskii, S. D.

AU - Nenashev, A. V.

AU - Oelerich, J. O.

AU - Greiner, S. H.M.

AU - Dvurechenskii, A. V.

AU - Gebhard, F.

PY - 2019/9/1

Y1 - 2019/9/1

N2 - Charge transport in amorphous oxide semiconductors is often described as the band transport affected by disorder in the form of random potential barriers (RB). Theoretical studies in the framework of this approach neglected so far the percolation nature of the phenomenon. In this article, a recipe for theoretical description of charge transport in the RB model is formulated using percolation arguments. Comparison with the results published so far evidences the superiority of the percolation approach.

AB - Charge transport in amorphous oxide semiconductors is often described as the band transport affected by disorder in the form of random potential barriers (RB). Theoretical studies in the framework of this approach neglected so far the percolation nature of the phenomenon. In this article, a recipe for theoretical description of charge transport in the RB model is formulated using percolation arguments. Comparison with the results published so far evidences the superiority of the percolation approach.

KW - CONDUCTIVITY

UR - http://www.scopus.com/inward/record.url?scp=85075169922&partnerID=8YFLogxK

U2 - 10.1209/0295-5075/127/57004

DO - 10.1209/0295-5075/127/57004

M3 - Article

AN - SCOPUS:85075169922

VL - 127

JO - Europhysics Letters

JF - Europhysics Letters

SN - 0295-5075

IS - 5

M1 - 57004

ER -

ID: 22361752