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Percolation Description of Charge Transport in Amorphous Oxide Semiconductors: Band Conduction Dominated by Disorder. / Nenashev, A. V.; Gebhard, F.; Meerholz, K. и др.

Amorphous Oxide Semiconductors: A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field. ред. / Hideo Hosono; Hideya Kumomi. Wiley-VCH Verlag, 2022. стр. 125-144 (Amorphous Oxide Semiconductors).

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › глава/раздел › научная › Рецензирование

Harvard

Nenashev, AV, Gebhard, F, Meerholz, K & Baranovskii, SD 2022, Percolation Description of Charge Transport in Amorphous Oxide Semiconductors: Band Conduction Dominated by Disorder. в H Hosono & H Kumomi (ред.), Amorphous Oxide Semiconductors: A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field. Amorphous Oxide Semiconductors, Wiley-VCH Verlag, стр. 125-144. https://doi.org/10.1002/9781119715641.ch6

APA

Nenashev, A. V., Gebhard, F., Meerholz, K., & Baranovskii, S. D. (2022). Percolation Description of Charge Transport in Amorphous Oxide Semiconductors: Band Conduction Dominated by Disorder. в H. Hosono, & H. Kumomi (Ред.), Amorphous Oxide Semiconductors: A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field (стр. 125-144). (Amorphous Oxide Semiconductors). Wiley-VCH Verlag. https://doi.org/10.1002/9781119715641.ch6

Vancouver

Nenashev AV, Gebhard F, Meerholz K, Baranovskii SD. Percolation Description of Charge Transport in Amorphous Oxide Semiconductors: Band Conduction Dominated by Disorder. в Hosono H, Kumomi H, Редакторы, Amorphous Oxide Semiconductors: A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field. Wiley-VCH Verlag. 2022. стр. 125-144. (Amorphous Oxide Semiconductors). doi: 10.1002/9781119715641.ch6

Author

Nenashev, A. V. ; Gebhard, F. ; Meerholz, K. и др. / Percolation Description of Charge Transport in Amorphous Oxide Semiconductors: Band Conduction Dominated by Disorder. Amorphous Oxide Semiconductors: A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field. Редактор / Hideo Hosono ; Hideya Kumomi. Wiley-VCH Verlag, 2022. стр. 125-144 (Amorphous Oxide Semiconductors).

BibTeX

@inbook{2d5c0f3da6cc4b63be98aeeb99fe6462,
title = "Percolation Description of Charge Transport in Amorphous Oxide Semiconductors: Band Conduction Dominated by Disorder",
abstract = "Amorphous oxide semiconductors, such as InGaZnO (IGZO) materials, are distinguished in the broad class of disordered semiconductors due to high values of charge carrier mobility that makes IGZOs unique for various device applications. In spite of numerous experimental and theoretical studies, the charge transport mechanism in IGZOs was, for a long period, a matter of controversial debates. Only recently, a comprehensive theory of charge transport in IGZOs has been developed based on the percolation theory. Our chapter is dedicated to a detailed description of this approach. Theoretical results are compared to experimental data revealing parameters of disorder potential in IGZO materials. {\textcopyright} 2022 John Wiley & Sons, Ltd. All rights reserved.",
author = "Nenashev, {A. V.} and F. Gebhard and K. Meerholz and Baranovskii, {S. D.}",
year = "2022",
month = aug,
doi = "10.1002/9781119715641.ch6",
language = "English",
isbn = "9781119715573",
series = "Amorphous Oxide Semiconductors",
publisher = "Wiley-VCH Verlag",
pages = "125--144",
editor = "Hideo Hosono and Hideya Kumomi",
booktitle = "Amorphous Oxide Semiconductors: A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field",
address = "Germany",

}

RIS

TY - CHAP

T1 - Percolation Description of Charge Transport in Amorphous Oxide Semiconductors: Band Conduction Dominated by Disorder

AU - Nenashev, A. V.

AU - Gebhard, F.

AU - Meerholz, K.

AU - Baranovskii, S. D.

PY - 2022/8

Y1 - 2022/8

N2 - Amorphous oxide semiconductors, such as InGaZnO (IGZO) materials, are distinguished in the broad class of disordered semiconductors due to high values of charge carrier mobility that makes IGZOs unique for various device applications. In spite of numerous experimental and theoretical studies, the charge transport mechanism in IGZOs was, for a long period, a matter of controversial debates. Only recently, a comprehensive theory of charge transport in IGZOs has been developed based on the percolation theory. Our chapter is dedicated to a detailed description of this approach. Theoretical results are compared to experimental data revealing parameters of disorder potential in IGZO materials. © 2022 John Wiley & Sons, Ltd. All rights reserved.

AB - Amorphous oxide semiconductors, such as InGaZnO (IGZO) materials, are distinguished in the broad class of disordered semiconductors due to high values of charge carrier mobility that makes IGZOs unique for various device applications. In spite of numerous experimental and theoretical studies, the charge transport mechanism in IGZOs was, for a long period, a matter of controversial debates. Only recently, a comprehensive theory of charge transport in IGZOs has been developed based on the percolation theory. Our chapter is dedicated to a detailed description of this approach. Theoretical results are compared to experimental data revealing parameters of disorder potential in IGZO materials. © 2022 John Wiley & Sons, Ltd. All rights reserved.

UR - https://www.scopus.com/inward/record.url?eid=2-s2.0-85140789395&partnerID=40&md5=16053e9e10e6fe452a7c9ea31fb6dab0

UR - https://www.mendeley.com/catalogue/8ab7672f-7f7b-3b8e-98a3-812498b7446d/

U2 - 10.1002/9781119715641.ch6

DO - 10.1002/9781119715641.ch6

M3 - Chapter

SN - 9781119715573

T3 - Amorphous Oxide Semiconductors

SP - 125

EP - 144

BT - Amorphous Oxide Semiconductors: A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field

A2 - Hosono, Hideo

A2 - Kumomi, Hideya

PB - Wiley-VCH Verlag

ER -

ID: 45609105