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Percolation description of charge transport in amorphous oxide semiconductors. / Nenashev, A. V.; Oelerich, J. O.; Greiner, S. H.M. и др.

в: Physical Review B, Том 100, № 12, 125202, 12.09.2019.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Nenashev, AV, Oelerich, JO, Greiner, SHM, Dvurechenskii, AV, Gebhard, F & Baranovskii, SD 2019, 'Percolation description of charge transport in amorphous oxide semiconductors', Physical Review B, Том. 100, № 12, 125202. https://doi.org/10.1103/PhysRevB.100.125202

APA

Nenashev, A. V., Oelerich, J. O., Greiner, S. H. M., Dvurechenskii, A. V., Gebhard, F., & Baranovskii, S. D. (2019). Percolation description of charge transport in amorphous oxide semiconductors. Physical Review B, 100(12), [125202]. https://doi.org/10.1103/PhysRevB.100.125202

Vancouver

Nenashev AV, Oelerich JO, Greiner SHM, Dvurechenskii AV, Gebhard F, Baranovskii SD. Percolation description of charge transport in amorphous oxide semiconductors. Physical Review B. 2019 сент. 12;100(12):125202. doi: 10.1103/PhysRevB.100.125202

Author

Nenashev, A. V. ; Oelerich, J. O. ; Greiner, S. H.M. и др. / Percolation description of charge transport in amorphous oxide semiconductors. в: Physical Review B. 2019 ; Том 100, № 12.

BibTeX

@article{743e7db492b34b53b52a1908e7394658,
title = "Percolation description of charge transport in amorphous oxide semiconductors",
abstract = "The charge transport mechanism in amorphous oxide semiconductors (AOS) is a matter of controversial debates. Most theoretical studies so far neglected the percolation nature of the phenomenon. In this paper, a recipe for theoretical description of charge transport in AOSs is formulated using the percolation arguments. Comparison with the previous theoretical studies shows a superiority of the percolation approach. The results of the percolation theory are compared to experimental data obtained in various InGaZnO materials revealing parameters of the disorder potential in such AOS.",
keywords = "CARRIER TRANSPORT, CONDUCTIVITY, ENERGY",
author = "Nenashev, {A. V.} and Oelerich, {J. O.} and Greiner, {S. H.M.} and Dvurechenskii, {A. V.} and F. Gebhard and Baranovskii, {S. D.}",
year = "2019",
month = sep,
day = "12",
doi = "10.1103/PhysRevB.100.125202",
language = "English",
volume = "100",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "12",

}

RIS

TY - JOUR

T1 - Percolation description of charge transport in amorphous oxide semiconductors

AU - Nenashev, A. V.

AU - Oelerich, J. O.

AU - Greiner, S. H.M.

AU - Dvurechenskii, A. V.

AU - Gebhard, F.

AU - Baranovskii, S. D.

PY - 2019/9/12

Y1 - 2019/9/12

N2 - The charge transport mechanism in amorphous oxide semiconductors (AOS) is a matter of controversial debates. Most theoretical studies so far neglected the percolation nature of the phenomenon. In this paper, a recipe for theoretical description of charge transport in AOSs is formulated using the percolation arguments. Comparison with the previous theoretical studies shows a superiority of the percolation approach. The results of the percolation theory are compared to experimental data obtained in various InGaZnO materials revealing parameters of the disorder potential in such AOS.

AB - The charge transport mechanism in amorphous oxide semiconductors (AOS) is a matter of controversial debates. Most theoretical studies so far neglected the percolation nature of the phenomenon. In this paper, a recipe for theoretical description of charge transport in AOSs is formulated using the percolation arguments. Comparison with the previous theoretical studies shows a superiority of the percolation approach. The results of the percolation theory are compared to experimental data obtained in various InGaZnO materials revealing parameters of the disorder potential in such AOS.

KW - CARRIER TRANSPORT

KW - CONDUCTIVITY

KW - ENERGY

UR - http://www.scopus.com/inward/record.url?scp=85072805820&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.100.125202

DO - 10.1103/PhysRevB.100.125202

M3 - Article

AN - SCOPUS:85072805820

VL - 100

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 12

M1 - 125202

ER -

ID: 21754478