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Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals. / Smagina, Zn V.; Zinovyev, V. A.; Rodyakina, E. E. и др.

в: Semiconductors, Том 53, № 10, 01.10.2019, стр. 1329-1333.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Smagina, ZV, Zinovyev, VA, Rodyakina, EE, Fomin, BI, Stepikhova, MV, Yablonskiy, AN, Gusev, SA, Novikov, AV & Dvurechenskii, AV 2019, 'Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals', Semiconductors, Том. 53, № 10, стр. 1329-1333. https://doi.org/10.1134/S1063782619100191

APA

Smagina, Z. V., Zinovyev, V. A., Rodyakina, E. E., Fomin, B. I., Stepikhova, M. V., Yablonskiy, A. N., Gusev, S. A., Novikov, A. V., & Dvurechenskii, A. V. (2019). Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals. Semiconductors, 53(10), 1329-1333. https://doi.org/10.1134/S1063782619100191

Vancouver

Smagina ZV, Zinovyev VA, Rodyakina EE, Fomin BI, Stepikhova MV, Yablonskiy AN и др. Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals. Semiconductors. 2019 окт. 1;53(10):1329-1333. doi: 10.1134/S1063782619100191

Author

Smagina, Zn V. ; Zinovyev, V. A. ; Rodyakina, E. E. и др. / Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals. в: Semiconductors. 2019 ; Том 53, № 10. стр. 1329-1333.

BibTeX

@article{29c9b665d16547599cf94df05a54f834,
title = "Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals",
abstract = "Two different approaches to the integration of self-assembled Ge(Si) quantum dots into two-dimensional photonic crystals are considered. One approach includes the synthesis of an ordered array of Ge(Si) quantum dots on the textured surface of a substrate followed by the formation of a photonic crystal on this array. In the other approach, the photonic crystal itself serves as a template for the ordered growth of quantum dots. It is shown that, by varying the diameter of holes of photonic crystals in the second approach, it is possible to implement the growth of quantum dots in two modes, in which quantum dots are formed inside or outside the holes of the photonic crystal. For structures with ordered quantum dots incorporated into a photonic crystal, an increase in the photoluminescence signal intensity is detected at room temperature in the spectral range 0.9-1.2 eV. This increase is attributed to the interaction of emission from the structure with radiation modes of the photonic crystal.",
keywords = "heterostructures, microphotoluminescence, photonic crystal, quantum dots, EMISSION, GE",
author = "Smagina, {Zn V.} and Zinovyev, {V. A.} and Rodyakina, {E. E.} and Fomin, {B. I.} and Stepikhova, {M. V.} and Yablonskiy, {A. N.} and Gusev, {S. A.} and Novikov, {A. V.} and Dvurechenskii, {A. V.}",
year = "2019",
month = oct,
day = "1",
doi = "10.1134/S1063782619100191",
language = "English",
volume = "53",
pages = "1329--1333",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "10",

}

RIS

TY - JOUR

T1 - Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals

AU - Smagina, Zn V.

AU - Zinovyev, V. A.

AU - Rodyakina, E. E.

AU - Fomin, B. I.

AU - Stepikhova, M. V.

AU - Yablonskiy, A. N.

AU - Gusev, S. A.

AU - Novikov, A. V.

AU - Dvurechenskii, A. V.

PY - 2019/10/1

Y1 - 2019/10/1

N2 - Two different approaches to the integration of self-assembled Ge(Si) quantum dots into two-dimensional photonic crystals are considered. One approach includes the synthesis of an ordered array of Ge(Si) quantum dots on the textured surface of a substrate followed by the formation of a photonic crystal on this array. In the other approach, the photonic crystal itself serves as a template for the ordered growth of quantum dots. It is shown that, by varying the diameter of holes of photonic crystals in the second approach, it is possible to implement the growth of quantum dots in two modes, in which quantum dots are formed inside or outside the holes of the photonic crystal. For structures with ordered quantum dots incorporated into a photonic crystal, an increase in the photoluminescence signal intensity is detected at room temperature in the spectral range 0.9-1.2 eV. This increase is attributed to the interaction of emission from the structure with radiation modes of the photonic crystal.

AB - Two different approaches to the integration of self-assembled Ge(Si) quantum dots into two-dimensional photonic crystals are considered. One approach includes the synthesis of an ordered array of Ge(Si) quantum dots on the textured surface of a substrate followed by the formation of a photonic crystal on this array. In the other approach, the photonic crystal itself serves as a template for the ordered growth of quantum dots. It is shown that, by varying the diameter of holes of photonic crystals in the second approach, it is possible to implement the growth of quantum dots in two modes, in which quantum dots are formed inside or outside the holes of the photonic crystal. For structures with ordered quantum dots incorporated into a photonic crystal, an increase in the photoluminescence signal intensity is detected at room temperature in the spectral range 0.9-1.2 eV. This increase is attributed to the interaction of emission from the structure with radiation modes of the photonic crystal.

KW - heterostructures

KW - microphotoluminescence

KW - photonic crystal

KW - quantum dots

KW - EMISSION

KW - GE

UR - http://www.scopus.com/inward/record.url?scp=85073063551&partnerID=8YFLogxK

U2 - 10.1134/S1063782619100191

DO - 10.1134/S1063782619100191

M3 - Article

AN - SCOPUS:85073063551

VL - 53

SP - 1329

EP - 1333

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 10

ER -

ID: 21847920