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Optical properties of LiGaSe2 noncentrosymmetric crystal. / Yelisseyev, A.; Liang, Fei; Isaenko, L. и др.

в: Optical Materials, Том 72, 01.10.2017, стр. 795-804.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Yelisseyev, A, Liang, F, Isaenko, L, Lobanov, S, Goloshumova, A & Lin, ZS 2017, 'Optical properties of LiGaSe2 noncentrosymmetric crystal', Optical Materials, Том. 72, стр. 795-804. https://doi.org/10.1016/j.optmat.2017.07.020

APA

Yelisseyev, A., Liang, F., Isaenko, L., Lobanov, S., Goloshumova, A., & Lin, Z. S. (2017). Optical properties of LiGaSe2 noncentrosymmetric crystal. Optical Materials, 72, 795-804. https://doi.org/10.1016/j.optmat.2017.07.020

Vancouver

Yelisseyev A, Liang F, Isaenko L, Lobanov S, Goloshumova A, Lin ZS. Optical properties of LiGaSe2 noncentrosymmetric crystal. Optical Materials. 2017 окт. 1;72:795-804. doi: 10.1016/j.optmat.2017.07.020

Author

Yelisseyev, A. ; Liang, Fei ; Isaenko, L. и др. / Optical properties of LiGaSe2 noncentrosymmetric crystal. в: Optical Materials. 2017 ; Том 72. стр. 795-804.

BibTeX

@article{1e4524894c914643a2575e281628aab9,
title = "Optical properties of LiGaSe2 noncentrosymmetric crystal",
abstract = "Large single crystals of LiGaSe2 were grown and their spectroscopic properties were studied. As-grown LiGaSe2 crystals are transparent in the 0.5–14 μm spectral region as well as at λ > 200 μm in the THz domain. A large blue shift of the fundamental absorption edge was established after high-temperature annealing in the presence of Li. Intense low-temperature photoluminescence (PL) in the 1.77 eV band is excited in the 3.0–3.6 eV absorption band near the fundamental absorption edge; PL intensity decreases by two orders of magnitude as temperature grows to 300 K. The X-ray irradiation results in crystal darkening, whereas the original state is restored after heating to 500 K or by visible light illumination. This effect is due to six traps that capture charge carriers: these traps were revealed using the thermoluminesence technique and their parameters were calculated. Pyroelectric luminescence in the 100–270 K range confirms the noncentrosymmetric structure of this crystal. DFT calculations were carried out to simulate the phonon density of states, optical absorption and Raman spectra. Calculations show that the intense 3.0–3.6 eV absorption band and corresponding 1.77 eV PL band may be associated with the cation antisite defects (GaLi), i.e. gallium in the Li site. The 2.15 and 2.4 eV emissions are likely due to the recombination of self-trapped excitons.",
keywords = "Absorption, Band gap, LiGaSe, Luminescence, Raman, Structure, TEMPERATURE-DEPENDENCE, LIMX2 M, MID-IR, PHASE-MATCHING PROPERTIES, LATTICE-VIBRATIONS, TE, SINGLE-CRYSTALS, SE, LiGaSe2, GROWTH, GA",
author = "A. Yelisseyev and Fei Liang and L. Isaenko and S. Lobanov and A. Goloshumova and Lin, {Z. S.}",
year = "2017",
month = oct,
day = "1",
doi = "10.1016/j.optmat.2017.07.020",
language = "English",
volume = "72",
pages = "795--804",
journal = "Optical Materials",
issn = "0925-3467",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Optical properties of LiGaSe2 noncentrosymmetric crystal

AU - Yelisseyev, A.

AU - Liang, Fei

AU - Isaenko, L.

AU - Lobanov, S.

AU - Goloshumova, A.

AU - Lin, Z. S.

PY - 2017/10/1

Y1 - 2017/10/1

N2 - Large single crystals of LiGaSe2 were grown and their spectroscopic properties were studied. As-grown LiGaSe2 crystals are transparent in the 0.5–14 μm spectral region as well as at λ > 200 μm in the THz domain. A large blue shift of the fundamental absorption edge was established after high-temperature annealing in the presence of Li. Intense low-temperature photoluminescence (PL) in the 1.77 eV band is excited in the 3.0–3.6 eV absorption band near the fundamental absorption edge; PL intensity decreases by two orders of magnitude as temperature grows to 300 K. The X-ray irradiation results in crystal darkening, whereas the original state is restored after heating to 500 K or by visible light illumination. This effect is due to six traps that capture charge carriers: these traps were revealed using the thermoluminesence technique and their parameters were calculated. Pyroelectric luminescence in the 100–270 K range confirms the noncentrosymmetric structure of this crystal. DFT calculations were carried out to simulate the phonon density of states, optical absorption and Raman spectra. Calculations show that the intense 3.0–3.6 eV absorption band and corresponding 1.77 eV PL band may be associated with the cation antisite defects (GaLi), i.e. gallium in the Li site. The 2.15 and 2.4 eV emissions are likely due to the recombination of self-trapped excitons.

AB - Large single crystals of LiGaSe2 were grown and their spectroscopic properties were studied. As-grown LiGaSe2 crystals are transparent in the 0.5–14 μm spectral region as well as at λ > 200 μm in the THz domain. A large blue shift of the fundamental absorption edge was established after high-temperature annealing in the presence of Li. Intense low-temperature photoluminescence (PL) in the 1.77 eV band is excited in the 3.0–3.6 eV absorption band near the fundamental absorption edge; PL intensity decreases by two orders of magnitude as temperature grows to 300 K. The X-ray irradiation results in crystal darkening, whereas the original state is restored after heating to 500 K or by visible light illumination. This effect is due to six traps that capture charge carriers: these traps were revealed using the thermoluminesence technique and their parameters were calculated. Pyroelectric luminescence in the 100–270 K range confirms the noncentrosymmetric structure of this crystal. DFT calculations were carried out to simulate the phonon density of states, optical absorption and Raman spectra. Calculations show that the intense 3.0–3.6 eV absorption band and corresponding 1.77 eV PL band may be associated with the cation antisite defects (GaLi), i.e. gallium in the Li site. The 2.15 and 2.4 eV emissions are likely due to the recombination of self-trapped excitons.

KW - Absorption

KW - Band gap

KW - LiGaSe

KW - Luminescence

KW - Raman

KW - Structure

KW - TEMPERATURE-DEPENDENCE

KW - LIMX2 M

KW - MID-IR

KW - PHASE-MATCHING PROPERTIES

KW - LATTICE-VIBRATIONS

KW - TE

KW - SINGLE-CRYSTALS

KW - SE

KW - LiGaSe2

KW - GROWTH

KW - GA

UR - http://www.scopus.com/inward/record.url?scp=85025137625&partnerID=8YFLogxK

U2 - 10.1016/j.optmat.2017.07.020

DO - 10.1016/j.optmat.2017.07.020

M3 - Article

AN - SCOPUS:85025137625

VL - 72

SP - 795

EP - 804

JO - Optical Materials

JF - Optical Materials

SN - 0925-3467

ER -

ID: 9959053