Optical and positron annihilation studies of structural defects in LiInSe2 single crystals

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Optical and positron annihilation studies of structural defects in LiInSe₂ single crystals. / Siemek, K.; Yelisseyev, A. P.; Horodek, P. и др.

в: Optical Materials, Том 109, 110262, 01.11.2020.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{b1759ddc136a48b193142c615ab90982,

title = "Optical and positron annihilation studies of structural defects in LiInSe2 single crystals",

abstract = "Lithium-indium di-selenide (LiInSe2) is a semiconductor material, which has been shown promising for applications in nonlinear optics and neutron detection. LiInSe2 crystals of optical quality, of different (from greenish to red) color were grown. Analysis of the fundamental absorption edge shows allowed direct band-to-band transitions and reveals structural disorder leading to the blurring of the edges of valence and conduction bands. Photoluminescence (PL) intensity is low in LiInSe2 of stoichiometric composition and increases after sample annealing in Se vapors. A narrow line at 408 nm is associated with free excitons. Analysis of PL and PL excitation spectra allows one to associate broad emission bands with point defects as well as with self-trapped excitons. The mean positron lifetime increases after annealing in Se vapor as a result of changes of the dominating defect type. For red crystals only big voids with lifetime of about 1021 ps are observed. Both methods suggest that greenish and red coloring of LiInSe2 are due to Se vacancies and interstitial Se atoms, respectively.",

keywords = "Absorption, Lithium-indium di-selenide, Photoluminescence, Point defects, Positron annihilation, Semiconductor",

author = "K. Siemek and Yelisseyev, {A. P.} and P. Horodek and Lobanov, {S. I.} and Goloshumova, {A. A.} and Belushkin, {A. V.} and Isaenko, {L. I.}",

year = "2020",

month = nov,

day = "1",

doi = "10.1016/j.optmat.2020.110262",

language = "English",

volume = "109",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Optical and positron annihilation studies of structural defects in LiInSe2 single crystals

AU - Siemek, K.

AU - Yelisseyev, A. P.

AU - Horodek, P.

AU - Lobanov, S. I.

AU - Goloshumova, A. A.

AU - Belushkin, A. V.

AU - Isaenko, L. I.

PY - 2020/11/1

Y1 - 2020/11/1

N2 - Lithium-indium di-selenide (LiInSe2) is a semiconductor material, which has been shown promising for applications in nonlinear optics and neutron detection. LiInSe2 crystals of optical quality, of different (from greenish to red) color were grown. Analysis of the fundamental absorption edge shows allowed direct band-to-band transitions and reveals structural disorder leading to the blurring of the edges of valence and conduction bands. Photoluminescence (PL) intensity is low in LiInSe2 of stoichiometric composition and increases after sample annealing in Se vapors. A narrow line at 408 nm is associated with free excitons. Analysis of PL and PL excitation spectra allows one to associate broad emission bands with point defects as well as with self-trapped excitons. The mean positron lifetime increases after annealing in Se vapor as a result of changes of the dominating defect type. For red crystals only big voids with lifetime of about 1021 ps are observed. Both methods suggest that greenish and red coloring of LiInSe2 are due to Se vacancies and interstitial Se atoms, respectively.

AB - Lithium-indium di-selenide (LiInSe2) is a semiconductor material, which has been shown promising for applications in nonlinear optics and neutron detection. LiInSe2 crystals of optical quality, of different (from greenish to red) color were grown. Analysis of the fundamental absorption edge shows allowed direct band-to-band transitions and reveals structural disorder leading to the blurring of the edges of valence and conduction bands. Photoluminescence (PL) intensity is low in LiInSe2 of stoichiometric composition and increases after sample annealing in Se vapors. A narrow line at 408 nm is associated with free excitons. Analysis of PL and PL excitation spectra allows one to associate broad emission bands with point defects as well as with self-trapped excitons. The mean positron lifetime increases after annealing in Se vapor as a result of changes of the dominating defect type. For red crystals only big voids with lifetime of about 1021 ps are observed. Both methods suggest that greenish and red coloring of LiInSe2 are due to Se vacancies and interstitial Se atoms, respectively.

KW - Absorption

KW - Lithium-indium di-selenide

KW - Photoluminescence

KW - Point defects

KW - Positron annihilation

KW - Semiconductor

UR - http://www.scopus.com/inward/record.url?scp=85089488174&partnerID=8YFLogxK

U2 - 10.1016/j.optmat.2020.110262

DO - 10.1016/j.optmat.2020.110262

M3 - Article

AN - SCOPUS:85089488174

VL - 109

JO - Optical Materials

JF - Optical Materials

SN - 0925-3467

M1 - 110262

ER -

ID: 24983779