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One-stage formation of two-dimensional photonic crystal and spatially ordered arrays of self-assembled ge(Si) nanoislandson pit-patterned silicon-on-insulator substrate. / Novikov, Alexey V.; Smagina, Zhanna V.; Stepikhova, Margarita V. и др.

в: Nanomaterials, Том 11, № 4, 909, 04.2021.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Novikov, AV, Smagina, ZV, Stepikhova, MV, Zinovyev, VA, Rudin, SA, Dyakov, SA, Rodyakina, EE, Nenashev, AV, Sergeev, SM, Peretokin, AV & Dvurechenskii, AV 2021, 'One-stage formation of two-dimensional photonic crystal and spatially ordered arrays of self-assembled ge(Si) nanoislandson pit-patterned silicon-on-insulator substrate', Nanomaterials, Том. 11, № 4, 909. https://doi.org/10.3390/nano11040909

APA

Novikov, A. V., Smagina, Z. V., Stepikhova, M. V., Zinovyev, V. A., Rudin, S. A., Dyakov, S. A., Rodyakina, E. E., Nenashev, A. V., Sergeev, S. M., Peretokin, A. V., & Dvurechenskii, A. V. (2021). One-stage formation of two-dimensional photonic crystal and spatially ordered arrays of self-assembled ge(Si) nanoislandson pit-patterned silicon-on-insulator substrate. Nanomaterials, 11(4), [909]. https://doi.org/10.3390/nano11040909

Vancouver

Novikov AV, Smagina ZV, Stepikhova MV, Zinovyev VA, Rudin SA, Dyakov SA и др. One-stage formation of two-dimensional photonic crystal and spatially ordered arrays of self-assembled ge(Si) nanoislandson pit-patterned silicon-on-insulator substrate. Nanomaterials. 2021 апр.;11(4):909. doi: 10.3390/nano11040909

Author

Novikov, Alexey V. ; Smagina, Zhanna V. ; Stepikhova, Margarita V. и др. / One-stage formation of two-dimensional photonic crystal and spatially ordered arrays of self-assembled ge(Si) nanoislandson pit-patterned silicon-on-insulator substrate. в: Nanomaterials. 2021 ; Том 11, № 4.

BibTeX

@article{8bf884bd838545b4aad4afb625427b71,
title = "One-stage formation of two-dimensional photonic crystal and spatially ordered arrays of self-assembled ge(Si) nanoislandson pit-patterned silicon-on-insulator substrate",
abstract = "A new approach to improve the light-emitting efficiency of Ge(Si) quantum dots (QDs) by the formation of an ordered array of QDs on a pit-patterned silicon-on-insulator (SOI) substrate is presented. This approach makes it possible to use the same pre-patterned substrate both for the growth of spatially ordered QDs and for the formation of photonic crystal (PhC) in which QDs are embedded. The periodic array of deep pits on the SOI substrate simultaneously serves as a template for spatially ordering of QDs and the basis for two-dimensional PhCs. As a result of theoretical and experimental studies, the main regularities of the QD nucleation on the pre-patterned surface with deep pits were revealed. The parameters of the pit-patterned substrate (the period of the location of the pits, the pit shape, and depth) providing a significant increase of the QD luminescence intensity due to the effective interaction of QD emission with the PhC modes are found.",
keywords = "Ge(Si) islands, Luminescence, Monte-Carlo simulation, Photonic crystal, Pre-patterned substrate, Quantum dots, Spatial ordering",
author = "Novikov, {Alexey V.} and Smagina, {Zhanna V.} and Stepikhova, {Margarita V.} and Zinovyev, {Vladimir A.} and Rudin, {Sergej A.} and Dyakov, {Sergej A.} and Rodyakina, {Ekaterina E.} and Nenashev, {Alexey V.} and Sergeev, {Sergey M.} and Peretokin, {Artem V.} and Dvurechenskii, {Anatoly V.}",
note = "Funding Information: Funding: The part of the study concerned with luminescence measurements was supported by the Russian Foundation for Basic Research, projects #18-29-20016_mk and # 18-42-520047-a. The part of the study concerned with the formation of structures with quantum dots incorporated into photonic crystals was supported by the Russian Foundation for Basic Research, project #19-42-540002-r_a, and the Government of the Novosibirsk region. Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2021",
month = apr,
doi = "10.3390/nano11040909",
language = "English",
volume = "11",
journal = "Nanomaterials",
issn = "2079-4991",
publisher = "MDPI AG",
number = "4",

}

RIS

TY - JOUR

T1 - One-stage formation of two-dimensional photonic crystal and spatially ordered arrays of self-assembled ge(Si) nanoislandson pit-patterned silicon-on-insulator substrate

AU - Novikov, Alexey V.

AU - Smagina, Zhanna V.

AU - Stepikhova, Margarita V.

AU - Zinovyev, Vladimir A.

AU - Rudin, Sergej A.

AU - Dyakov, Sergej A.

AU - Rodyakina, Ekaterina E.

AU - Nenashev, Alexey V.

AU - Sergeev, Sergey M.

AU - Peretokin, Artem V.

AU - Dvurechenskii, Anatoly V.

N1 - Funding Information: Funding: The part of the study concerned with luminescence measurements was supported by the Russian Foundation for Basic Research, projects #18-29-20016_mk and # 18-42-520047-a. The part of the study concerned with the formation of structures with quantum dots incorporated into photonic crystals was supported by the Russian Foundation for Basic Research, project #19-42-540002-r_a, and the Government of the Novosibirsk region. Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/4

Y1 - 2021/4

N2 - A new approach to improve the light-emitting efficiency of Ge(Si) quantum dots (QDs) by the formation of an ordered array of QDs on a pit-patterned silicon-on-insulator (SOI) substrate is presented. This approach makes it possible to use the same pre-patterned substrate both for the growth of spatially ordered QDs and for the formation of photonic crystal (PhC) in which QDs are embedded. The periodic array of deep pits on the SOI substrate simultaneously serves as a template for spatially ordering of QDs and the basis for two-dimensional PhCs. As a result of theoretical and experimental studies, the main regularities of the QD nucleation on the pre-patterned surface with deep pits were revealed. The parameters of the pit-patterned substrate (the period of the location of the pits, the pit shape, and depth) providing a significant increase of the QD luminescence intensity due to the effective interaction of QD emission with the PhC modes are found.

AB - A new approach to improve the light-emitting efficiency of Ge(Si) quantum dots (QDs) by the formation of an ordered array of QDs on a pit-patterned silicon-on-insulator (SOI) substrate is presented. This approach makes it possible to use the same pre-patterned substrate both for the growth of spatially ordered QDs and for the formation of photonic crystal (PhC) in which QDs are embedded. The periodic array of deep pits on the SOI substrate simultaneously serves as a template for spatially ordering of QDs and the basis for two-dimensional PhCs. As a result of theoretical and experimental studies, the main regularities of the QD nucleation on the pre-patterned surface with deep pits were revealed. The parameters of the pit-patterned substrate (the period of the location of the pits, the pit shape, and depth) providing a significant increase of the QD luminescence intensity due to the effective interaction of QD emission with the PhC modes are found.

KW - Ge(Si) islands

KW - Luminescence

KW - Monte-Carlo simulation

KW - Photonic crystal

KW - Pre-patterned substrate

KW - Quantum dots

KW - Spatial ordering

UR - http://www.scopus.com/inward/record.url?scp=85103479012&partnerID=8YFLogxK

U2 - 10.3390/nano11040909

DO - 10.3390/nano11040909

M3 - Article

C2 - 33918328

AN - SCOPUS:85103479012

VL - 11

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 4

M1 - 909

ER -

ID: 28256160