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Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope. / Geydt, P.; Alekseev, P. A.; Dunaevskiy, M. и др.

в: Journal of Physics: Conference Series, Том 661, № 1, 012031, 02.12.2015.

Результаты исследований: Научные публикации в периодических изданиях › статья по материалам конференции › Рецензирование

Harvard

Geydt, P, Alekseev, PA, Dunaevskiy, M, Lähderanta, E, Haggrén, T, Kakko, JP & Lipsanen, H 2015, 'Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope', Journal of Physics: Conference Series, Том. 661, № 1, 012031. https://doi.org/10.1088/1742-6596/661/1/012031

APA

Geydt, P., Alekseev, P. A., Dunaevskiy, M., Lähderanta, E., Haggrén, T., Kakko, J. P., & Lipsanen, H. (2015). Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope. Journal of Physics: Conference Series, 661(1), [012031]. https://doi.org/10.1088/1742-6596/661/1/012031

Vancouver

Geydt P, Alekseev PA, Dunaevskiy M, Lähderanta E, Haggrén T, Kakko JP и др. Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope. Journal of Physics: Conference Series. 2015 дек. 2;661(1):012031. doi: 10.1088/1742-6596/661/1/012031

Author

Geydt, P. ; Alekseev, P. A. ; Dunaevskiy, M. и др. / Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope. в: Journal of Physics: Conference Series. 2015 ; Том 661, № 1.

BibTeX

@article{c52d811d5470443281295f6214802b70,
title = "Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope",
abstract = "In this work we demonstrate the possibility of studying the current-voltage characteristics for single vertically standing semiconductor nanowires on standard AFM equipped by current measuring module in PeakForce Tapping mode. On the basis of research of eight different samples of p-doped GaAs nanowires grown on different GaAs substrates, peculiar electrical effects were revealed. It was found how covering of substrate surface by SiOx layer increases the current, as well as phosphorous passivation of the grown nanowires. Elimination of the Schottky barrier between golden cap and the top parts of nanowires was observed. It was additionally studied that charge accumulation on the shell of single nanowires affects its resistivity and causes the hysteresis loops on I-V curves.",
author = "P. Geydt and Alekseev, {P. A.} and M. Dunaevskiy and E. L{\"a}hderanta and T. Haggr{\'e}n and Kakko, {J. P.} and H. Lipsanen",
note = "Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope / P. Geydt, E. L{\"a}hderanta, P. A. Alekseev [et al.] // Journal of Physics: Conference Series. – 2015. – Vol. 661. – No 1. – P. 012031. Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 17th Russian Youth Conference on Physics and Astronomy, PhysicA.SPb 2014 ; Conference date: 28-10-2014 Through 30-10-2014",
year = "2015",
month = dec,
day = "2",
doi = "10.1088/1742-6596/661/1/012031",
language = "English",
volume = "661",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope

AU - Geydt, P.

AU - Alekseev, P. A.

AU - Dunaevskiy, M.

AU - Lähderanta, E.

AU - Haggrén, T.

AU - Kakko, J. P.

AU - Lipsanen, H.

N1 - Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope / P. Geydt, E. Lähderanta, P. A. Alekseev [et al.] // Journal of Physics: Conference Series. – 2015. – Vol. 661. – No 1. – P. 012031. Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2015/12/2

Y1 - 2015/12/2

N2 - In this work we demonstrate the possibility of studying the current-voltage characteristics for single vertically standing semiconductor nanowires on standard AFM equipped by current measuring module in PeakForce Tapping mode. On the basis of research of eight different samples of p-doped GaAs nanowires grown on different GaAs substrates, peculiar electrical effects were revealed. It was found how covering of substrate surface by SiOx layer increases the current, as well as phosphorous passivation of the grown nanowires. Elimination of the Schottky barrier between golden cap and the top parts of nanowires was observed. It was additionally studied that charge accumulation on the shell of single nanowires affects its resistivity and causes the hysteresis loops on I-V curves.

AB - In this work we demonstrate the possibility of studying the current-voltage characteristics for single vertically standing semiconductor nanowires on standard AFM equipped by current measuring module in PeakForce Tapping mode. On the basis of research of eight different samples of p-doped GaAs nanowires grown on different GaAs substrates, peculiar electrical effects were revealed. It was found how covering of substrate surface by SiOx layer increases the current, as well as phosphorous passivation of the grown nanowires. Elimination of the Schottky barrier between golden cap and the top parts of nanowires was observed. It was additionally studied that charge accumulation on the shell of single nanowires affects its resistivity and causes the hysteresis loops on I-V curves.

UR - http://www.scopus.com/inward/record.url?scp=84956857768&partnerID=8YFLogxK

UR - https://elibrary.ru/item.asp?id=26896246

U2 - 10.1088/1742-6596/661/1/012031

DO - 10.1088/1742-6596/661/1/012031

M3 - Conference article

AN - SCOPUS:84956857768

VL - 661

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012031

T2 - 17th Russian Youth Conference on Physics and Astronomy, PhysicA.SPb 2014

Y2 - 28 October 2014 through 30 October 2014

ER -

ID: 35376020