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Observation of different edge current states localization scenarios in a HgTe based two-dimensional topological insulator. / Olshanetsky, E. B.; Kvon, Z. D.; Gusev, G. M. и др.

в: Physica E: Low-Dimensional Systems and Nanostructures, Том 147, 115605, 03.2023.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Olshanetsky, EB, Kvon, ZD, Gusev, GM & Mikhailov, NN 2023, 'Observation of different edge current states localization scenarios in a HgTe based two-dimensional topological insulator', Physica E: Low-Dimensional Systems and Nanostructures, Том. 147, 115605. https://doi.org/10.1016/j.physe.2022.115605

APA

Olshanetsky, E. B., Kvon, Z. D., Gusev, G. M., & Mikhailov, N. N. (2023). Observation of different edge current states localization scenarios in a HgTe based two-dimensional topological insulator. Physica E: Low-Dimensional Systems and Nanostructures, 147, [115605]. https://doi.org/10.1016/j.physe.2022.115605

Vancouver

Olshanetsky EB, Kvon ZD, Gusev GM, Mikhailov NN. Observation of different edge current states localization scenarios in a HgTe based two-dimensional topological insulator. Physica E: Low-Dimensional Systems and Nanostructures. 2023 март;147:115605. doi: 10.1016/j.physe.2022.115605

Author

Olshanetsky, E. B. ; Kvon, Z. D. ; Gusev, G. M. и др. / Observation of different edge current states localization scenarios in a HgTe based two-dimensional topological insulator. в: Physica E: Low-Dimensional Systems and Nanostructures. 2023 ; Том 147.

BibTeX

@article{af66904cda884217a2be5899d489320b,
title = "Observation of different edge current states localization scenarios in a HgTe based two-dimensional topological insulator",
abstract = "Resistance versus temperature dependence in several sets of 2DTI samples fabricated on the basis of 8.3 nm HgTe quantum well using the same technological procedure has been investigated both in the presence of weak perpendicular magnetic field and at B=0. The obtained results do not confirm the universality of the behavior previously interpreted as the Anderson localization of the edge states of a 2DTI induced by a weak magnetic field (Piatrusha et al., 2019). Some samples are found to be insensitive to weak magnetic field and show clear signs of localization even at B=0. In diffusive mode and at B=0 the variation of the edge states resistance with temperature depends on the initial resistance level and can be both weak and exponentially large.",
keywords = "Insulator, Localization, Topological, Two-dimensional",
author = "Olshanetsky, {E. B.} and Kvon, {Z. D.} and Gusev, {G. M.} and Mikhailov, {N. N.}",
note = "The financial support of this work by Ministry of Science and Higher Education of the Russian Federation , Grant No. 075-15-2020-797 (13.1902.21.0024) is acknowledged. Data Availability Statement: The data that supports the findings of this study are available within the article.",
year = "2023",
month = mar,
doi = "10.1016/j.physe.2022.115605",
language = "English",
volume = "147",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Observation of different edge current states localization scenarios in a HgTe based two-dimensional topological insulator

AU - Olshanetsky, E. B.

AU - Kvon, Z. D.

AU - Gusev, G. M.

AU - Mikhailov, N. N.

N1 - The financial support of this work by Ministry of Science and Higher Education of the Russian Federation , Grant No. 075-15-2020-797 (13.1902.21.0024) is acknowledged. Data Availability Statement: The data that supports the findings of this study are available within the article.

PY - 2023/3

Y1 - 2023/3

N2 - Resistance versus temperature dependence in several sets of 2DTI samples fabricated on the basis of 8.3 nm HgTe quantum well using the same technological procedure has been investigated both in the presence of weak perpendicular magnetic field and at B=0. The obtained results do not confirm the universality of the behavior previously interpreted as the Anderson localization of the edge states of a 2DTI induced by a weak magnetic field (Piatrusha et al., 2019). Some samples are found to be insensitive to weak magnetic field and show clear signs of localization even at B=0. In diffusive mode and at B=0 the variation of the edge states resistance with temperature depends on the initial resistance level and can be both weak and exponentially large.

AB - Resistance versus temperature dependence in several sets of 2DTI samples fabricated on the basis of 8.3 nm HgTe quantum well using the same technological procedure has been investigated both in the presence of weak perpendicular magnetic field and at B=0. The obtained results do not confirm the universality of the behavior previously interpreted as the Anderson localization of the edge states of a 2DTI induced by a weak magnetic field (Piatrusha et al., 2019). Some samples are found to be insensitive to weak magnetic field and show clear signs of localization even at B=0. In diffusive mode and at B=0 the variation of the edge states resistance with temperature depends on the initial resistance level and can be both weak and exponentially large.

KW - Insulator

KW - Localization

KW - Topological

KW - Two-dimensional

UR - https://www.scopus.com/inward/record.url?eid=2-s2.0-85145218569&partnerID=40&md5=1ce2e63720bfa545e1c03566db54d457

UR - https://www.mendeley.com/catalogue/f276fe23-0113-3b33-baf5-3c9c328506db/

U2 - 10.1016/j.physe.2022.115605

DO - 10.1016/j.physe.2022.115605

M3 - Article

VL - 147

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

M1 - 115605

ER -

ID: 49691510