Standard

Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface. / Rudin, S. A.; Smagina, Zh V.; Zinovyev, V. A. и др.

в: Semiconductors, Том 52, № 11, 01.11.2018, стр. 1457-1461.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Rudin, SA, Smagina, ZV, Zinovyev, VA, Novikov, PL, Nenashev, AV, Rodyakina, EE & Dvurechenskii, AV 2018, 'Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface', Semiconductors, Том. 52, № 11, стр. 1457-1461. https://doi.org/10.1134/S1063782618110222

APA

Rudin, S. A., Smagina, Z. V., Zinovyev, V. A., Novikov, P. L., Nenashev, A. V., Rodyakina, E. E., & Dvurechenskii, A. V. (2018). Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface. Semiconductors, 52(11), 1457-1461. https://doi.org/10.1134/S1063782618110222

Vancouver

Rudin SA, Smagina ZV, Zinovyev VA, Novikov PL, Nenashev AV, Rodyakina EE и др. Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface. Semiconductors. 2018 нояб. 1;52(11):1457-1461. doi: 10.1134/S1063782618110222

Author

Rudin, S. A. ; Smagina, Zh V. ; Zinovyev, V. A. и др. / Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface. в: Semiconductors. 2018 ; Том 52, № 11. стр. 1457-1461.

BibTeX

@article{251c0403c177419d92a9d56f1f48e234,
title = "Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface",
abstract = "Abstract: The nucleation of three-dimentional Ge islands formed on a pre-patterned Si substrate with an array of round pits is studied. It is found that the Ge islands nucleate within pits with pointed bottoms and along the perimeters of pits with flat bottoms. This effect is determined by the difference between the distributions of elastic strains at the Ge/Si interface for differently shaped pit bottoms. The results of the simulation of growth show that, in the case of pits with pointed bottoms, the most relaxed regions are at the centers of the pit bottoms and the nucleation of islands takes place just in these regions. At the same time, in the case of pits with flat bottoms, the most relaxed regions are shifted from the pit bottoms to the pit edges, resulting in the nucleation of islands along the pit perimeters.",
keywords = "QUANTUM DOTS, GROWTH, GERMANIUM, SILICON, NANOSTRUCTURES, TRANSITION, CRYSTALS, PYRAMIDS, SI(001), DOMES",
author = "Rudin, {S. A.} and Smagina, {Zh V.} and Zinovyev, {V. A.} and Novikov, {P. L.} and Nenashev, {A. V.} and Rodyakina, {E. E.} and Dvurechenskii, {A. V.}",
note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",
year = "2018",
month = nov,
day = "1",
doi = "10.1134/S1063782618110222",
language = "English",
volume = "52",
pages = "1457--1461",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "11",

}

RIS

TY - JOUR

T1 - Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface

AU - Rudin, S. A.

AU - Smagina, Zh V.

AU - Zinovyev, V. A.

AU - Novikov, P. L.

AU - Nenashev, A. V.

AU - Rodyakina, E. E.

AU - Dvurechenskii, A. V.

N1 - Publisher Copyright: © 2018, Pleiades Publishing, Ltd.

PY - 2018/11/1

Y1 - 2018/11/1

N2 - Abstract: The nucleation of three-dimentional Ge islands formed on a pre-patterned Si substrate with an array of round pits is studied. It is found that the Ge islands nucleate within pits with pointed bottoms and along the perimeters of pits with flat bottoms. This effect is determined by the difference between the distributions of elastic strains at the Ge/Si interface for differently shaped pit bottoms. The results of the simulation of growth show that, in the case of pits with pointed bottoms, the most relaxed regions are at the centers of the pit bottoms and the nucleation of islands takes place just in these regions. At the same time, in the case of pits with flat bottoms, the most relaxed regions are shifted from the pit bottoms to the pit edges, resulting in the nucleation of islands along the pit perimeters.

AB - Abstract: The nucleation of three-dimentional Ge islands formed on a pre-patterned Si substrate with an array of round pits is studied. It is found that the Ge islands nucleate within pits with pointed bottoms and along the perimeters of pits with flat bottoms. This effect is determined by the difference between the distributions of elastic strains at the Ge/Si interface for differently shaped pit bottoms. The results of the simulation of growth show that, in the case of pits with pointed bottoms, the most relaxed regions are at the centers of the pit bottoms and the nucleation of islands takes place just in these regions. At the same time, in the case of pits with flat bottoms, the most relaxed regions are shifted from the pit bottoms to the pit edges, resulting in the nucleation of islands along the pit perimeters.

KW - QUANTUM DOTS

KW - GROWTH

KW - GERMANIUM

KW - SILICON

KW - NANOSTRUCTURES

KW - TRANSITION

KW - CRYSTALS

KW - PYRAMIDS

KW - SI(001)

KW - DOMES

UR - http://www.scopus.com/inward/record.url?scp=85055248071&partnerID=8YFLogxK

U2 - 10.1134/S1063782618110222

DO - 10.1134/S1063782618110222

M3 - Article

AN - SCOPUS:85055248071

VL - 52

SP - 1457

EP - 1461

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 11

ER -

ID: 17244558