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Novel single-source precursors for SiB:XCyNz film deposition. / Merenkov, Ivan S.; Gostevskii, Boris A.; Krasnov, Pavel O. и др.

в: New Journal of Chemistry, Том 41, № 20, 2017, стр. 11926-11933.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Merenkov, IS, Gostevskii, BA, Krasnov, PO, Basova, TV, Zhukov, YM, Kasatkin, IA, Sysoev, SV, Kosyakov, VI, Khomyakov, MN & Kosinova, ML 2017, 'Novel single-source precursors for SiB:XCyNz film deposition', New Journal of Chemistry, Том. 41, № 20, стр. 11926-11933. https://doi.org/10.1039/c7nj01651d

APA

Merenkov, I. S., Gostevskii, B. A., Krasnov, P. O., Basova, T. V., Zhukov, Y. M., Kasatkin, I. A., Sysoev, S. V., Kosyakov, V. I., Khomyakov, M. N., & Kosinova, M. L. (2017). Novel single-source precursors for SiB:XCyNz film deposition. New Journal of Chemistry, 41(20), 11926-11933. https://doi.org/10.1039/c7nj01651d

Vancouver

Merenkov IS, Gostevskii BA, Krasnov PO, Basova TV, Zhukov YM, Kasatkin IA и др. Novel single-source precursors for SiB:XCyNz film deposition. New Journal of Chemistry. 2017;41(20):11926-11933. doi: 10.1039/c7nj01651d

Author

Merenkov, Ivan S. ; Gostevskii, Boris A. ; Krasnov, Pavel O. и др. / Novel single-source precursors for SiB:XCyNz film deposition. в: New Journal of Chemistry. 2017 ; Том 41, № 20. стр. 11926-11933.

BibTeX

@article{edfe5689f92b4638ba867ba7053563d3,
title = "Novel single-source precursors for SiB:XCyNz film deposition",
abstract = "Novel CVD precursors for SiBxCyNz film deposition such as HCCB[N(SiMe3)2]2, MeB[N(SiMe3)2]2 and Me3SiCCB[N(SiMe3)2]2 were synthesized. The structure and composition of the compounds were investigated with NMR, FTIR, Raman spectroscopies and CHN-analysis. Comparison of theoretical and experimental FTIR and Raman data was performed. Thermogravimetric analysis and the static tensimetry method with a glass membrane null manometer demonstrated that Me3SiCCB[N(SiMe3)2]2 is the most suitable CVD precursor. The formation of SiBxCyNz films was predicted using thermodynamic modelling at a temperature below 1600 K in the total pressure range of 0.27-1333 Pa. The films of chemical composition Si23.7B8.3C51.4N9.6O7 were deposited by low-pressure chemical vapour deposition (LPCVD) and their morphology and mechanical properties were investigated. The amorphous SiBxCyNz films with a smooth surface exhibited hardness, Young's modulus and elastic recovery equal to 17.5 ± 0.9 GPa, 176 ± 11 GPa and 61 ± 2%, respectively.",
keywords = "C-N FILMS, GAUSSIAN-BASIS SETS, RAMAN-SPECTRA, ATOMS LI, APPROXIMATION, ENERGY",
author = "Merenkov, {Ivan S.} and Gostevskii, {Boris A.} and Krasnov, {Pavel O.} and Basova, {Tamara V.} and Zhukov, {Yuri M.} and Kasatkin, {Igor A.} and Sysoev, {Sergey V.} and Kosyakov, {Victor I.} and Khomyakov, {Maksim N.} and Kosinova, {Marina L.}",
year = "2017",
doi = "10.1039/c7nj01651d",
language = "English",
volume = "41",
pages = "11926--11933",
journal = "New Journal of Chemistry",
issn = "1144-0546",
publisher = "ROYAL SOC CHEMISTRY",
number = "20",

}

RIS

TY - JOUR

T1 - Novel single-source precursors for SiB:XCyNz film deposition

AU - Merenkov, Ivan S.

AU - Gostevskii, Boris A.

AU - Krasnov, Pavel O.

AU - Basova, Tamara V.

AU - Zhukov, Yuri M.

AU - Kasatkin, Igor A.

AU - Sysoev, Sergey V.

AU - Kosyakov, Victor I.

AU - Khomyakov, Maksim N.

AU - Kosinova, Marina L.

PY - 2017

Y1 - 2017

N2 - Novel CVD precursors for SiBxCyNz film deposition such as HCCB[N(SiMe3)2]2, MeB[N(SiMe3)2]2 and Me3SiCCB[N(SiMe3)2]2 were synthesized. The structure and composition of the compounds were investigated with NMR, FTIR, Raman spectroscopies and CHN-analysis. Comparison of theoretical and experimental FTIR and Raman data was performed. Thermogravimetric analysis and the static tensimetry method with a glass membrane null manometer demonstrated that Me3SiCCB[N(SiMe3)2]2 is the most suitable CVD precursor. The formation of SiBxCyNz films was predicted using thermodynamic modelling at a temperature below 1600 K in the total pressure range of 0.27-1333 Pa. The films of chemical composition Si23.7B8.3C51.4N9.6O7 were deposited by low-pressure chemical vapour deposition (LPCVD) and their morphology and mechanical properties were investigated. The amorphous SiBxCyNz films with a smooth surface exhibited hardness, Young's modulus and elastic recovery equal to 17.5 ± 0.9 GPa, 176 ± 11 GPa and 61 ± 2%, respectively.

AB - Novel CVD precursors for SiBxCyNz film deposition such as HCCB[N(SiMe3)2]2, MeB[N(SiMe3)2]2 and Me3SiCCB[N(SiMe3)2]2 were synthesized. The structure and composition of the compounds were investigated with NMR, FTIR, Raman spectroscopies and CHN-analysis. Comparison of theoretical and experimental FTIR and Raman data was performed. Thermogravimetric analysis and the static tensimetry method with a glass membrane null manometer demonstrated that Me3SiCCB[N(SiMe3)2]2 is the most suitable CVD precursor. The formation of SiBxCyNz films was predicted using thermodynamic modelling at a temperature below 1600 K in the total pressure range of 0.27-1333 Pa. The films of chemical composition Si23.7B8.3C51.4N9.6O7 were deposited by low-pressure chemical vapour deposition (LPCVD) and their morphology and mechanical properties were investigated. The amorphous SiBxCyNz films with a smooth surface exhibited hardness, Young's modulus and elastic recovery equal to 17.5 ± 0.9 GPa, 176 ± 11 GPa and 61 ± 2%, respectively.

KW - C-N FILMS

KW - GAUSSIAN-BASIS SETS

KW - RAMAN-SPECTRA

KW - ATOMS LI

KW - APPROXIMATION

KW - ENERGY

UR - http://www.scopus.com/inward/record.url?scp=85031044208&partnerID=8YFLogxK

U2 - 10.1039/c7nj01651d

DO - 10.1039/c7nj01651d

M3 - Article

AN - SCOPUS:85031044208

VL - 41

SP - 11926

EP - 11933

JO - New Journal of Chemistry

JF - New Journal of Chemistry

SN - 1144-0546

IS - 20

ER -

ID: 25438249