Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Non-monotonic variation of the Kramers point band gap with increasing magnetic doping in BiTeI. / Shikin, A. M.; Rybkina, A. A.; Estyunin, D. A. и др.
в: Scientific Reports, Том 11, № 1, 23332, 12.2021.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
}
TY - JOUR
T1 - Non-monotonic variation of the Kramers point band gap with increasing magnetic doping in BiTeI
AU - Shikin, A. M.
AU - Rybkina, A. A.
AU - Estyunin, D. A.
AU - Klimovskikh, I. I.
AU - Rybkin, A. G.
AU - Filnov, S. O.
AU - Koroleva, A. V.
AU - Shevchenko, E. V.
AU - Likholetova, M. V.
AU - Voroshnin, V. Yu
AU - Petukhov, A. E.
AU - Kokh, K. A.
AU - Tereshchenko, O. E.
AU - Petaccia, L.
AU - Di Santo, G.
AU - Kumar, S.
AU - Kimura, A.
AU - Skirdkov, P. N.
AU - Zvezdin, K. A.
AU - Zvezdin, A. K.
N1 - Funding Information: The authors acknowledge support by the Ministry of Science and Higher Education of the Russian Federation (Grant No 075-15-2020-797 (13.1902.21.0024)). The authors acknowledge the HiSOR, BESSY II, Elettra and SPbU Research Park staff for technical supports during the experiments and supplying the liquid Helium. D.A.E. acknowledges the G-RISC program for support. Publisher Copyright: © 2021, The Author(s).
PY - 2021/12
Y1 - 2021/12
N2 - Polar Rashba-type semiconductor BiTeI doped with magnetic elements constitutes one of the most promising platforms for the future development of spintronics and quantum computing thanks to the combination of strong spin-orbit coupling and internal ferromagnetic ordering. The latter originates from magnetic impurities and is able to open an energy gap at the Kramers point (KP gap) of the Rashba bands. In the current work using angle-resolved photoemission spectroscopy (ARPES) we show that the KP gap depends non-monotonically on the doping level in case of V-doped BiTeI. We observe that the gap increases with V concentration until it reaches 3% and then starts to mitigate. Moreover, we find that the saturation magnetisation of samples under applied magnetic field studied by superconducting quantum interference device (SQUID) magnetometer has a similar behaviour with the doping level. Theoretical analysis shows that the non-monotonic behavior can be explained by the increase of antiferromagnetic coupled atoms of magnetic impurity above a certain doping level. This leads to the reduction of the total magnetic moment in the domains and thus to the mitigation of the KP gap as observed in the experiment. These findings provide further insight in the creation of internal magnetic ordering and consequent KP gap opening in magnetically-doped Rashba-type semiconductors.
AB - Polar Rashba-type semiconductor BiTeI doped with magnetic elements constitutes one of the most promising platforms for the future development of spintronics and quantum computing thanks to the combination of strong spin-orbit coupling and internal ferromagnetic ordering. The latter originates from magnetic impurities and is able to open an energy gap at the Kramers point (KP gap) of the Rashba bands. In the current work using angle-resolved photoemission spectroscopy (ARPES) we show that the KP gap depends non-monotonically on the doping level in case of V-doped BiTeI. We observe that the gap increases with V concentration until it reaches 3% and then starts to mitigate. Moreover, we find that the saturation magnetisation of samples under applied magnetic field studied by superconducting quantum interference device (SQUID) magnetometer has a similar behaviour with the doping level. Theoretical analysis shows that the non-monotonic behavior can be explained by the increase of antiferromagnetic coupled atoms of magnetic impurity above a certain doping level. This leads to the reduction of the total magnetic moment in the domains and thus to the mitigation of the KP gap as observed in the experiment. These findings provide further insight in the creation of internal magnetic ordering and consequent KP gap opening in magnetically-doped Rashba-type semiconductors.
UR - http://www.scopus.com/inward/record.url?scp=85120912977&partnerID=8YFLogxK
U2 - 10.1038/s41598-021-02493-8
DO - 10.1038/s41598-021-02493-8
M3 - Article
C2 - 34857800
AN - SCOPUS:85120912977
VL - 11
JO - Scientific Reports
JF - Scientific Reports
SN - 2045-2322
IS - 1
M1 - 23332
ER -
ID: 34967794