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Non-monotonic variation of the Kramers point band gap with increasing magnetic doping in BiTeI. / Shikin, A. M.; Rybkina, A. A.; Estyunin, D. A. и др.

в: Scientific Reports, Том 11, № 1, 23332, 12.2021.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Shikin, AM, Rybkina, AA, Estyunin, DA, Klimovskikh, II, Rybkin, AG, Filnov, SO, Koroleva, AV, Shevchenko, EV, Likholetova, MV, Voroshnin, VY, Petukhov, AE, Kokh, KA, Tereshchenko, OE, Petaccia, L, Di Santo, G, Kumar, S, Kimura, A, Skirdkov, PN, Zvezdin, KA & Zvezdin, AK 2021, 'Non-monotonic variation of the Kramers point band gap with increasing magnetic doping in BiTeI', Scientific Reports, Том. 11, № 1, 23332. https://doi.org/10.1038/s41598-021-02493-8

APA

Shikin, A. M., Rybkina, A. A., Estyunin, D. A., Klimovskikh, I. I., Rybkin, A. G., Filnov, S. O., Koroleva, A. V., Shevchenko, E. V., Likholetova, M. V., Voroshnin, V. Y., Petukhov, A. E., Kokh, K. A., Tereshchenko, O. E., Petaccia, L., Di Santo, G., Kumar, S., Kimura, A., Skirdkov, P. N., Zvezdin, K. A., & Zvezdin, A. K. (2021). Non-monotonic variation of the Kramers point band gap with increasing magnetic doping in BiTeI. Scientific Reports, 11(1), [23332]. https://doi.org/10.1038/s41598-021-02493-8

Vancouver

Shikin AM, Rybkina AA, Estyunin DA, Klimovskikh II, Rybkin AG, Filnov SO и др. Non-monotonic variation of the Kramers point band gap with increasing magnetic doping in BiTeI. Scientific Reports. 2021 дек.;11(1):23332. doi: 10.1038/s41598-021-02493-8

Author

Shikin, A. M. ; Rybkina, A. A. ; Estyunin, D. A. и др. / Non-monotonic variation of the Kramers point band gap with increasing magnetic doping in BiTeI. в: Scientific Reports. 2021 ; Том 11, № 1.

BibTeX

@article{fb39146064cd44be97fd595c6d82730c,
title = "Non-monotonic variation of the Kramers point band gap with increasing magnetic doping in BiTeI",
abstract = "Polar Rashba-type semiconductor BiTeI doped with magnetic elements constitutes one of the most promising platforms for the future development of spintronics and quantum computing thanks to the combination of strong spin-orbit coupling and internal ferromagnetic ordering. The latter originates from magnetic impurities and is able to open an energy gap at the Kramers point (KP gap) of the Rashba bands. In the current work using angle-resolved photoemission spectroscopy (ARPES) we show that the KP gap depends non-monotonically on the doping level in case of V-doped BiTeI. We observe that the gap increases with V concentration until it reaches 3% and then starts to mitigate. Moreover, we find that the saturation magnetisation of samples under applied magnetic field studied by superconducting quantum interference device (SQUID) magnetometer has a similar behaviour with the doping level. Theoretical analysis shows that the non-monotonic behavior can be explained by the increase of antiferromagnetic coupled atoms of magnetic impurity above a certain doping level. This leads to the reduction of the total magnetic moment in the domains and thus to the mitigation of the KP gap as observed in the experiment. These findings provide further insight in the creation of internal magnetic ordering and consequent KP gap opening in magnetically-doped Rashba-type semiconductors.",
author = "Shikin, {A. M.} and Rybkina, {A. A.} and Estyunin, {D. A.} and Klimovskikh, {I. I.} and Rybkin, {A. G.} and Filnov, {S. O.} and Koroleva, {A. V.} and Shevchenko, {E. V.} and Likholetova, {M. V.} and Voroshnin, {V. Yu} and Petukhov, {A. E.} and Kokh, {K. A.} and Tereshchenko, {O. E.} and L. Petaccia and {Di Santo}, G. and S. Kumar and A. Kimura and Skirdkov, {P. N.} and Zvezdin, {K. A.} and Zvezdin, {A. K.}",
note = "Funding Information: The authors acknowledge support by the Ministry of Science and Higher Education of the Russian Federation (Grant No 075-15-2020-797 (13.1902.21.0024)). The authors acknowledge the HiSOR, BESSY II, Elettra and SPbU Research Park staff for technical supports during the experiments and supplying the liquid Helium. D.A.E. acknowledges the G-RISC program for support. Publisher Copyright: {\textcopyright} 2021, The Author(s).",
year = "2021",
month = dec,
doi = "10.1038/s41598-021-02493-8",
language = "English",
volume = "11",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
number = "1",

}

RIS

TY - JOUR

T1 - Non-monotonic variation of the Kramers point band gap with increasing magnetic doping in BiTeI

AU - Shikin, A. M.

AU - Rybkina, A. A.

AU - Estyunin, D. A.

AU - Klimovskikh, I. I.

AU - Rybkin, A. G.

AU - Filnov, S. O.

AU - Koroleva, A. V.

AU - Shevchenko, E. V.

AU - Likholetova, M. V.

AU - Voroshnin, V. Yu

AU - Petukhov, A. E.

AU - Kokh, K. A.

AU - Tereshchenko, O. E.

AU - Petaccia, L.

AU - Di Santo, G.

AU - Kumar, S.

AU - Kimura, A.

AU - Skirdkov, P. N.

AU - Zvezdin, K. A.

AU - Zvezdin, A. K.

N1 - Funding Information: The authors acknowledge support by the Ministry of Science and Higher Education of the Russian Federation (Grant No 075-15-2020-797 (13.1902.21.0024)). The authors acknowledge the HiSOR, BESSY II, Elettra and SPbU Research Park staff for technical supports during the experiments and supplying the liquid Helium. D.A.E. acknowledges the G-RISC program for support. Publisher Copyright: © 2021, The Author(s).

PY - 2021/12

Y1 - 2021/12

N2 - Polar Rashba-type semiconductor BiTeI doped with magnetic elements constitutes one of the most promising platforms for the future development of spintronics and quantum computing thanks to the combination of strong spin-orbit coupling and internal ferromagnetic ordering. The latter originates from magnetic impurities and is able to open an energy gap at the Kramers point (KP gap) of the Rashba bands. In the current work using angle-resolved photoemission spectroscopy (ARPES) we show that the KP gap depends non-monotonically on the doping level in case of V-doped BiTeI. We observe that the gap increases with V concentration until it reaches 3% and then starts to mitigate. Moreover, we find that the saturation magnetisation of samples under applied magnetic field studied by superconducting quantum interference device (SQUID) magnetometer has a similar behaviour with the doping level. Theoretical analysis shows that the non-monotonic behavior can be explained by the increase of antiferromagnetic coupled atoms of magnetic impurity above a certain doping level. This leads to the reduction of the total magnetic moment in the domains and thus to the mitigation of the KP gap as observed in the experiment. These findings provide further insight in the creation of internal magnetic ordering and consequent KP gap opening in magnetically-doped Rashba-type semiconductors.

AB - Polar Rashba-type semiconductor BiTeI doped with magnetic elements constitutes one of the most promising platforms for the future development of spintronics and quantum computing thanks to the combination of strong spin-orbit coupling and internal ferromagnetic ordering. The latter originates from magnetic impurities and is able to open an energy gap at the Kramers point (KP gap) of the Rashba bands. In the current work using angle-resolved photoemission spectroscopy (ARPES) we show that the KP gap depends non-monotonically on the doping level in case of V-doped BiTeI. We observe that the gap increases with V concentration until it reaches 3% and then starts to mitigate. Moreover, we find that the saturation magnetisation of samples under applied magnetic field studied by superconducting quantum interference device (SQUID) magnetometer has a similar behaviour with the doping level. Theoretical analysis shows that the non-monotonic behavior can be explained by the increase of antiferromagnetic coupled atoms of magnetic impurity above a certain doping level. This leads to the reduction of the total magnetic moment in the domains and thus to the mitigation of the KP gap as observed in the experiment. These findings provide further insight in the creation of internal magnetic ordering and consequent KP gap opening in magnetically-doped Rashba-type semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=85120912977&partnerID=8YFLogxK

U2 - 10.1038/s41598-021-02493-8

DO - 10.1038/s41598-021-02493-8

M3 - Article

C2 - 34857800

AN - SCOPUS:85120912977

VL - 11

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 23332

ER -

ID: 34967794