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Nonlinear Hall Coefficient in Films of a Three-Dimensional Topological Insulator. / Stepina, N. P.; Bazhenov, A. O.; Shumilin, A. V. и др.

в: JETP Letters, Том 120, № 3, 17.09.2024, стр. 199-204.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Stepina, NP, Bazhenov, AO, Shumilin, AV, Zhdanov, EY, Ishchenko, DV, Kirienko, VV, Aksenov, MS & Tereshchenko, OE 2024, 'Nonlinear Hall Coefficient in Films of a Three-Dimensional Topological Insulator', JETP Letters, Том. 120, № 3, стр. 199-204. https://doi.org/10.1134/S0021364024602367

APA

Stepina, N. P., Bazhenov, A. O., Shumilin, A. V., Zhdanov, E. Y., Ishchenko, D. V., Kirienko, V. V., Aksenov, M. S., & Tereshchenko, O. E. (2024). Nonlinear Hall Coefficient in Films of a Three-Dimensional Topological Insulator. JETP Letters, 120(3), 199-204. https://doi.org/10.1134/S0021364024602367

Vancouver

Stepina NP, Bazhenov AO, Shumilin AV, Zhdanov EY, Ishchenko DV, Kirienko VV и др. Nonlinear Hall Coefficient in Films of a Three-Dimensional Topological Insulator. JETP Letters. 2024 сент. 17;120(3):199-204. doi: 10.1134/S0021364024602367

Author

Stepina, N. P. ; Bazhenov, A. O. ; Shumilin, A. V. и др. / Nonlinear Hall Coefficient in Films of a Three-Dimensional Topological Insulator. в: JETP Letters. 2024 ; Том 120, № 3. стр. 199-204.

BibTeX

@article{28ca768697d34f1d9776e67f1977855c,
title = "Nonlinear Hall Coefficient in Films of a Three-Dimensional Topological Insulator",
abstract = "The magnetoresistance and the Hall effect in transistor structures fabricated on films of the three-dimensional topological insulator (Bi,Sb)2(Te,Se)3 are studied. It is shown that the negative magnetoresistance at low magnetic field is described in terms of quantum corrections to the conductivity. The magnitude of these corrections depends on the gate voltage and increases when approaching the charge neutrality point. The Hall coefficient RH is nonlinear at low magnetic fields for any gate voltage, and the RH nonlinearity is the most pronounced at high negative gate voltages. At high fields, the slope of the magnetic field dependence of the Hall coefficient changes its sign at some gate voltage.",
author = "Stepina, {N. P.} and Bazhenov, {A. O.} and Shumilin, {A. V.} and Zhdanov, {E. Yu} and Ishchenko, {D. V.} and Kirienko, {V. V.} and Aksenov, {M. S.} and Tereshchenko, {O. E.}",
note = "This work was supported jointly by the Russian Science Foundation and by the Government of the Novosibirsk region (project no. 24-22-20066, https://rscf.ru/project/24-22-20066/ ).",
year = "2024",
month = sep,
day = "17",
doi = "10.1134/S0021364024602367",
language = "English",
volume = "120",
pages = "199--204",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "3",

}

RIS

TY - JOUR

T1 - Nonlinear Hall Coefficient in Films of a Three-Dimensional Topological Insulator

AU - Stepina, N. P.

AU - Bazhenov, A. O.

AU - Shumilin, A. V.

AU - Zhdanov, E. Yu

AU - Ishchenko, D. V.

AU - Kirienko, V. V.

AU - Aksenov, M. S.

AU - Tereshchenko, O. E.

N1 - This work was supported jointly by the Russian Science Foundation and by the Government of the Novosibirsk region (project no. 24-22-20066, https://rscf.ru/project/24-22-20066/ ).

PY - 2024/9/17

Y1 - 2024/9/17

N2 - The magnetoresistance and the Hall effect in transistor structures fabricated on films of the three-dimensional topological insulator (Bi,Sb)2(Te,Se)3 are studied. It is shown that the negative magnetoresistance at low magnetic field is described in terms of quantum corrections to the conductivity. The magnitude of these corrections depends on the gate voltage and increases when approaching the charge neutrality point. The Hall coefficient RH is nonlinear at low magnetic fields for any gate voltage, and the RH nonlinearity is the most pronounced at high negative gate voltages. At high fields, the slope of the magnetic field dependence of the Hall coefficient changes its sign at some gate voltage.

AB - The magnetoresistance and the Hall effect in transistor structures fabricated on films of the three-dimensional topological insulator (Bi,Sb)2(Te,Se)3 are studied. It is shown that the negative magnetoresistance at low magnetic field is described in terms of quantum corrections to the conductivity. The magnitude of these corrections depends on the gate voltage and increases when approaching the charge neutrality point. The Hall coefficient RH is nonlinear at low magnetic fields for any gate voltage, and the RH nonlinearity is the most pronounced at high negative gate voltages. At high fields, the slope of the magnetic field dependence of the Hall coefficient changes its sign at some gate voltage.

UR - https://www.mendeley.com/catalogue/9cb9c009-2036-30a2-b8b1-84bd35aeed46/

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85204389337&origin=inward&txGid=086e1dcc79d8270e2b2ef168c4b6567d

U2 - 10.1134/S0021364024602367

DO - 10.1134/S0021364024602367

M3 - Article

VL - 120

SP - 199

EP - 204

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 3

ER -

ID: 60828655