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Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots. / Derebezov, I. A.; Gaisler, V. A.; Gaisler, A. V. и др.

в: Semiconductors, Том 53, № 10, 01.10.2019, стр. 1304-1307.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Derebezov, IA, Gaisler, VA, Gaisler, AV, Dmitriev, DV, Toropov, AI, von Helversen, M, de la Haye, C, Bounouar, S & Reitzenstein, S 2019, 'Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots', Semiconductors, Том. 53, № 10, стр. 1304-1307. https://doi.org/10.1134/S1063782619100063

APA

Derebezov, I. A., Gaisler, V. A., Gaisler, A. V., Dmitriev, D. V., Toropov, A. I., von Helversen, M., de la Haye, C., Bounouar, S., & Reitzenstein, S. (2019). Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots. Semiconductors, 53(10), 1304-1307. https://doi.org/10.1134/S1063782619100063

Vancouver

Derebezov IA, Gaisler VA, Gaisler AV, Dmitriev DV, Toropov AI, von Helversen M и др. Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots. Semiconductors. 2019 окт. 1;53(10):1304-1307. doi: 10.1134/S1063782619100063

Author

Derebezov, I. A. ; Gaisler, V. A. ; Gaisler, A. V. и др. / Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots. в: Semiconductors. 2019 ; Том 53, № 10. стр. 1304-1307.

BibTeX

@article{3c462ee11703421eb6e3811eba0be33c,
title = "Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots",
abstract = "Abstract: The results of investigations of the optical characteristics of nonclassical light sources based on selectively positioned microlens structures and single (111) In(Ga)As quantum dots grown on a (111) BGaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing second-order correlation functions g(2)(τ); g(2)(0) = 0.07. The fine structure of the exciton states of (111) In(Ga)As quantum dots is investigated. It is shown that, in the energy range of 1.320–1.345 eV, the splitting of exciton states is comparable to the natural width of the exciton lines, which is of interest for developing photon-pair emitters based on them.",
keywords = "fine structure of exciton states, photon-pair sources, quantum dots, single-photon sources, SINGLE",
author = "Derebezov, {I. A.} and Gaisler, {V. A.} and Gaisler, {A. V.} and Dmitriev, {D. V.} and Toropov, {A. I.} and {von Helversen}, M. and {de la Haye}, C. and S. Bounouar and S. Reitzenstein",
year = "2019",
month = oct,
day = "1",
doi = "10.1134/S1063782619100063",
language = "English",
volume = "53",
pages = "1304--1307",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "10",

}

RIS

TY - JOUR

T1 - Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots

AU - Derebezov, I. A.

AU - Gaisler, V. A.

AU - Gaisler, A. V.

AU - Dmitriev, D. V.

AU - Toropov, A. I.

AU - von Helversen, M.

AU - de la Haye, C.

AU - Bounouar, S.

AU - Reitzenstein, S.

PY - 2019/10/1

Y1 - 2019/10/1

N2 - Abstract: The results of investigations of the optical characteristics of nonclassical light sources based on selectively positioned microlens structures and single (111) In(Ga)As quantum dots grown on a (111) BGaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing second-order correlation functions g(2)(τ); g(2)(0) = 0.07. The fine structure of the exciton states of (111) In(Ga)As quantum dots is investigated. It is shown that, in the energy range of 1.320–1.345 eV, the splitting of exciton states is comparable to the natural width of the exciton lines, which is of interest for developing photon-pair emitters based on them.

AB - Abstract: The results of investigations of the optical characteristics of nonclassical light sources based on selectively positioned microlens structures and single (111) In(Ga)As quantum dots grown on a (111) BGaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing second-order correlation functions g(2)(τ); g(2)(0) = 0.07. The fine structure of the exciton states of (111) In(Ga)As quantum dots is investigated. It is shown that, in the energy range of 1.320–1.345 eV, the splitting of exciton states is comparable to the natural width of the exciton lines, which is of interest for developing photon-pair emitters based on them.

KW - fine structure of exciton states

KW - photon-pair sources

KW - quantum dots

KW - single-photon sources

KW - SINGLE

UR - http://www.scopus.com/inward/record.url?scp=85073247076&partnerID=8YFLogxK

U2 - 10.1134/S1063782619100063

DO - 10.1134/S1063782619100063

M3 - Article

AN - SCOPUS:85073247076

VL - 53

SP - 1304

EP - 1307

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 10

ER -

ID: 21859811