Standard

Negative differential resistance in partially fluorinated graphene films. / Antonova, I. V.; Shojaei, S.; Sattari-Esfahlan, S. M. и др.

в: Applied Physics Letters, Том 111, № 4, 043108, 24.07.2017.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Antonova, IV, Shojaei, S, Sattari-Esfahlan, SM & Kurkina, II 2017, 'Negative differential resistance in partially fluorinated graphene films', Applied Physics Letters, Том. 111, № 4, 043108. https://doi.org/10.1063/1.4995253

APA

Antonova, I. V., Shojaei, S., Sattari-Esfahlan, S. M., & Kurkina, I. I. (2017). Negative differential resistance in partially fluorinated graphene films. Applied Physics Letters, 111(4), [043108]. https://doi.org/10.1063/1.4995253

Vancouver

Antonova IV, Shojaei S, Sattari-Esfahlan SM, Kurkina II. Negative differential resistance in partially fluorinated graphene films. Applied Physics Letters. 2017 июль 24;111(4):043108. doi: 10.1063/1.4995253

Author

Antonova, I. V. ; Shojaei, S. ; Sattari-Esfahlan, S. M. и др. / Negative differential resistance in partially fluorinated graphene films. в: Applied Physics Letters. 2017 ; Том 111, № 4.

BibTeX

@article{e3c8ecbaa9c342e9a5a05c51b58c4abc,
title = "Negative differential resistance in partially fluorinated graphene films",
abstract = "Partially fluorinated graphene films were created by chemical functionalization of graphene layers in an aqueous solution of hydrofluoric acid. The formation of graphene islands or graphene quantum dots (GQDs) and a fluorinated graphene network is demonstrated in such films. Negative differential resistance (NDR) resulting from the formation of the potential barrier system in the films was observed for different fluorination degrees of suspension. The origin of the NDR varies with an increase in the fluorination degree of the suspension. Numerical calculations were performed to elucidate the tunneling between adjacent energy levels and creation of NDR. It was found that in the case of films with smaller flake and smaller GQD sizes, multi-peak NDR appears in the I-V curve. We predict that the NDR peak position shifts towards lower voltage with a decrease in the GQD size. Surprisingly, we observed a negative step-like valley for positive biases in the I-V curve of samples. Our findings with detailed analysis shed light on understanding the mechanisms of the NDR phenomenon in a partially fluorinated graphene system.",
keywords = "DEVICES",
author = "Antonova, {I. V.} and S. Shojaei and Sattari-Esfahlan, {S. M.} and Kurkina, {Irina I.}",
year = "2017",
month = jul,
day = "24",
doi = "10.1063/1.4995253",
language = "English",
volume = "111",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "4",

}

RIS

TY - JOUR

T1 - Negative differential resistance in partially fluorinated graphene films

AU - Antonova, I. V.

AU - Shojaei, S.

AU - Sattari-Esfahlan, S. M.

AU - Kurkina, Irina I.

PY - 2017/7/24

Y1 - 2017/7/24

N2 - Partially fluorinated graphene films were created by chemical functionalization of graphene layers in an aqueous solution of hydrofluoric acid. The formation of graphene islands or graphene quantum dots (GQDs) and a fluorinated graphene network is demonstrated in such films. Negative differential resistance (NDR) resulting from the formation of the potential barrier system in the films was observed for different fluorination degrees of suspension. The origin of the NDR varies with an increase in the fluorination degree of the suspension. Numerical calculations were performed to elucidate the tunneling between adjacent energy levels and creation of NDR. It was found that in the case of films with smaller flake and smaller GQD sizes, multi-peak NDR appears in the I-V curve. We predict that the NDR peak position shifts towards lower voltage with a decrease in the GQD size. Surprisingly, we observed a negative step-like valley for positive biases in the I-V curve of samples. Our findings with detailed analysis shed light on understanding the mechanisms of the NDR phenomenon in a partially fluorinated graphene system.

AB - Partially fluorinated graphene films were created by chemical functionalization of graphene layers in an aqueous solution of hydrofluoric acid. The formation of graphene islands or graphene quantum dots (GQDs) and a fluorinated graphene network is demonstrated in such films. Negative differential resistance (NDR) resulting from the formation of the potential barrier system in the films was observed for different fluorination degrees of suspension. The origin of the NDR varies with an increase in the fluorination degree of the suspension. Numerical calculations were performed to elucidate the tunneling between adjacent energy levels and creation of NDR. It was found that in the case of films with smaller flake and smaller GQD sizes, multi-peak NDR appears in the I-V curve. We predict that the NDR peak position shifts towards lower voltage with a decrease in the GQD size. Surprisingly, we observed a negative step-like valley for positive biases in the I-V curve of samples. Our findings with detailed analysis shed light on understanding the mechanisms of the NDR phenomenon in a partially fluorinated graphene system.

KW - DEVICES

UR - http://www.scopus.com/inward/record.url?scp=85026556411&partnerID=8YFLogxK

U2 - 10.1063/1.4995253

DO - 10.1063/1.4995253

M3 - Article

AN - SCOPUS:85026556411

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 043108

ER -

ID: 9979427