Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Near-infrared photoresponse in ge/si quantum dots enhanced by photon-trapping hole arrays. / Yakimov, Andrew I.; Kirienko, Victor V.; Bloshkin, Aleksei A. и др.
в: Nanomaterials, Том 11, № 9, 2302, 09.2021.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
}
TY - JOUR
T1 - Near-infrared photoresponse in ge/si quantum dots enhanced by photon-trapping hole arrays
AU - Yakimov, Andrew I.
AU - Kirienko, Victor V.
AU - Bloshkin, Aleksei A.
AU - Utkin, Dmitrii E.
AU - Dvurechenskii, Anatoly V.
N1 - Funding Information: Funding: This research was funded by the Russian Science Foundation (grant 19-12-00070). Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.
PY - 2021/9
Y1 - 2021/9
N2 - Group-IV photonic devices that contain Si and Ge are very attractive due to their compatibility with integrated silicon photonics platforms. Despite the recent progress in fabrication of Ge/Si quantum dot (QD) photodetectors, their low quantum efficiency still remains a major challenge and different approaches to improve the QD photoresponse are under investigation. In this paper, we report on the fabrication and optical characterization of Ge/Si QD pin photodiodes integrated with photon-trapping microstructures for near-infrared photodetection. The photon traps represent vertical holes having 2D periodicity with a feature size of about 1 µm on the diode surface, which significantly increase the normal incidence light absorption of Ge/Si QDs due to generation of lateral optical modes in the wide telecommunication wavelength range. For a hole array periodicity of 1700 nm and hole diameter of 1130 nm, the responsivity of the photon-trapping device is found to be enhanced by about 25 times at λ = 1.2 µm and by 34 times at λ ≈ 1.6 µm relative to a bare detector without holes. These results make the micro/nanohole Ge/Si QD photodiodes promising to cover the operation wavelength range from the telecom O-band (1260–1360 nm) up to the L-band (1565–1625 nm).
AB - Group-IV photonic devices that contain Si and Ge are very attractive due to their compatibility with integrated silicon photonics platforms. Despite the recent progress in fabrication of Ge/Si quantum dot (QD) photodetectors, their low quantum efficiency still remains a major challenge and different approaches to improve the QD photoresponse are under investigation. In this paper, we report on the fabrication and optical characterization of Ge/Si QD pin photodiodes integrated with photon-trapping microstructures for near-infrared photodetection. The photon traps represent vertical holes having 2D periodicity with a feature size of about 1 µm on the diode surface, which significantly increase the normal incidence light absorption of Ge/Si QDs due to generation of lateral optical modes in the wide telecommunication wavelength range. For a hole array periodicity of 1700 nm and hole diameter of 1130 nm, the responsivity of the photon-trapping device is found to be enhanced by about 25 times at λ = 1.2 µm and by 34 times at λ ≈ 1.6 µm relative to a bare detector without holes. These results make the micro/nanohole Ge/Si QD photodiodes promising to cover the operation wavelength range from the telecom O-band (1260–1360 nm) up to the L-band (1565–1625 nm).
KW - Near-infrared photodetection
KW - Photon-trapping nanostructures
KW - Quantum dots
KW - Telecom
UR - http://www.scopus.com/inward/record.url?scp=85114244248&partnerID=8YFLogxK
U2 - 10.3390/nano11092302
DO - 10.3390/nano11092302
M3 - Article
C2 - 34578618
AN - SCOPUS:85114244248
VL - 11
JO - Nanomaterials
JF - Nanomaterials
SN - 2079-4991
IS - 9
M1 - 2302
ER -
ID: 34147926