TY - JOUR

T1 - Modulation of THz Radiation Based on Semiconductor–Metal Phase Transition in Vanadium Dioxide

AU - Bortnikov, S. G.

AU - Gerasimov, V. V.

AU - Dmitriev, D. V.

N1 - Bortnikov, S.G., Gerasimov, V.V. & Dmitriev, D.V. Modulation of THz Radiation Based on Semiconductor–Metal Phase Transition in Vanadium Dioxide. Optoelectron.Instrument.Proc. 61, 689–695 (2025). This work was performed in the framework of the government task no. FWGW-2025-0024. The results of this work were obtained with the use of the equipment of the collective use centre ‘‘Siberian Center of Synchrotron and Terahertz Radiation’’ based on the unique scientific facility ‘‘Novosibirsk Free Electron Laser’’ in Budker Institute of Nuclear Physics of the Siberian Branch of the Russian Academy of Sciences.

PY - 2025/12

Y1 - 2025/12

N2 - In this paper, the method for THz radiation modulation based on the semiconductor–metal phase transition in vanadium dioxide (VO) was explored. Thermal heating of a VO film on the silicon substrate above the metallic-state temperature resulted in the reduction of THz radiation transmission. For two-electrode VO film structures with millimeter-sized interelectrode gap, heating the film by means of electric current leads to the transmission reduction only. At the same time, due to the heating of the VO film substrate, a slow (seconds-running) cooling process and the film reverse transition to the semiconductor state occur. To increase the modulation frequency up to hundreds of kHz, it is proposed to create a structured system of separated micron-sized VO-elements instead of a continuous film, which allows for much faster cooling such elements, which was confirmed experimentally.

AB - In this paper, the method for THz radiation modulation based on the semiconductor–metal phase transition in vanadium dioxide (VO) was explored. Thermal heating of a VO film on the silicon substrate above the metallic-state temperature resulted in the reduction of THz radiation transmission. For two-electrode VO film structures with millimeter-sized interelectrode gap, heating the film by means of electric current leads to the transmission reduction only. At the same time, due to the heating of the VO film substrate, a slow (seconds-running) cooling process and the film reverse transition to the semiconductor state occur. To increase the modulation frequency up to hundreds of kHz, it is proposed to create a structured system of separated micron-sized VO-elements instead of a continuous film, which allows for much faster cooling such elements, which was confirmed experimentally.

KW - Novosibirsk free electron laser

KW - modulation of THz radiation

KW - semiconductor–metal phase transition

KW - vanadium dioxide

UR - https://www.scopus.com/pages/publications/105035378800

UR - https://www.mendeley.com/catalogue/f8302fcc-3d5c-3583-b60d-dd57b9c4de65/

U2 - 10.3103/S8756699025700785

DO - 10.3103/S8756699025700785

M3 - Article

VL - 61

SP - 689

EP - 695

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 6

ER -