Modelling an electro-optical modulator based on a vertical p - n junction in a silicon-on-insulator structure

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Modelling an electro-optical modulator based on a vertical p - n junction in a silicon-on-insulator structure. / Tsarev, A.V.; Taziev, R. M.

в: Quantum Electronics, Том 49, № 11, 01.11.2019, стр. 1036-1044.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{f9f8253827d34da8859d7d58e6b4374e,

title = "Modelling an electro-optical modulator based on a vertical p - n junction in a silicon-on-insulator structure",

abstract = "We report the results of numerical simulation of a Mach-Zehnder electro-optical modulator using beam splitters based on multimode interference in a silicon-on-insulator structure. The control is provided due to the depletion effect in the vertical p - n junction, which can be fabricated using the self-alignment technology. An optimal modulator design is proposed, which impedance is matched with an external 50-Omega load, for which, with a reverse bias of -5 V and an active length of 1.7 mm, the optical frequency bandwidth of similar to 50 GHz can be achieved. A special doping profile of the p - n junction of the modulator is presented, which provides an optical frequency bandwidth of 30 GHz with a reverse bias of -3 V and a modulator length of 2.5 mm. Such modulators can be used in integrated optics, optical communications and radio photonics devices.",

keywords = "electro-optical modulator, silicon-on-insulator, p - n junction, numerical simulation, integrated optics, radio photonics, CARRIER-DEPLETION, POLYMER MODULATOR, WAVE-GUIDE, COMPACT, FUTURE, DESIGN, p-n junction",

author = "A.V. Tsarev and Taziev, {R. M.}",

note = "Царев А.В., Тазиев Р.М. Моделирование электрооптического модулятора на основе вертикального p–n-перехода в структуре кремний-на-изоляторе // Квантовая электроника. - 2019. - Т. 49. - № 11. - С. 1036–1044",

year = "2019",

month = nov,

day = "1",

doi = "10.1070/QEL17021",

language = "English",

volume = "49",

pages = "1036--1044",

journal = "Quantum Electronics",

issn = "1063-7818",

publisher = "Turpion Ltd.",

number = "11",

}

RIS

TY - JOUR

T1 - Modelling an electro-optical modulator based on a vertical p - n junction in a silicon-on-insulator structure

AU - Tsarev, A.V.

AU - Taziev, R. M.

N1 - Царев А.В., Тазиев Р.М. Моделирование электрооптического модулятора на основе вертикального p–n-перехода в структуре кремний-на-изоляторе // Квантовая электроника. - 2019. - Т. 49. - № 11. - С. 1036–1044

PY - 2019/11/1

Y1 - 2019/11/1

N2 - We report the results of numerical simulation of a Mach-Zehnder electro-optical modulator using beam splitters based on multimode interference in a silicon-on-insulator structure. The control is provided due to the depletion effect in the vertical p - n junction, which can be fabricated using the self-alignment technology. An optimal modulator design is proposed, which impedance is matched with an external 50-Omega load, for which, with a reverse bias of -5 V and an active length of 1.7 mm, the optical frequency bandwidth of similar to 50 GHz can be achieved. A special doping profile of the p - n junction of the modulator is presented, which provides an optical frequency bandwidth of 30 GHz with a reverse bias of -3 V and a modulator length of 2.5 mm. Such modulators can be used in integrated optics, optical communications and radio photonics devices.

AB - We report the results of numerical simulation of a Mach-Zehnder electro-optical modulator using beam splitters based on multimode interference in a silicon-on-insulator structure. The control is provided due to the depletion effect in the vertical p - n junction, which can be fabricated using the self-alignment technology. An optimal modulator design is proposed, which impedance is matched with an external 50-Omega load, for which, with a reverse bias of -5 V and an active length of 1.7 mm, the optical frequency bandwidth of similar to 50 GHz can be achieved. A special doping profile of the p - n junction of the modulator is presented, which provides an optical frequency bandwidth of 30 GHz with a reverse bias of -3 V and a modulator length of 2.5 mm. Such modulators can be used in integrated optics, optical communications and radio photonics devices.

KW - electro-optical modulator

KW - silicon-on-insulator

KW - p - n junction

KW - numerical simulation

KW - integrated optics

KW - radio photonics

KW - CARRIER-DEPLETION

KW - POLYMER MODULATOR

KW - WAVE-GUIDE

KW - COMPACT

KW - FUTURE

KW - DESIGN

KW - p-n junction

UR - https://elibrary.ru/item.asp?id=41537686

UR - http://www.mathnet.ru/php/archive.phtml?wshow=paper&jrnid=qe&paperid=17140&option_lang=rus

UR - http://www.scopus.com/inward/record.url?scp=85080049789&partnerID=8YFLogxK

U2 - 10.1070/QEL17021

DO - 10.1070/QEL17021

M3 - Article

VL - 49

SP - 1036

EP - 1044

JO - Quantum Electronics

JF - Quantum Electronics

SN - 1063-7818

IS - 11

ER -

ID: 23292504