Standard
Micro-transformer-based integrated digital isolator in 180/90 nm CMOS. / Butuzov, Vladimir; Nazarenko, Alexey; Bocharov, Yuri и др.
2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Proceedings. ред. / O Stukach. Institute of Electrical and Electronics Engineers Inc., 2019. 8729578 (2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Proceedings).
Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
Harvard
Butuzov, V, Nazarenko, A, Bocharov, Y, Kus, O
, Prokopyev, V, Dmitriev, N, Smirnov, E, Smirnova, T, Trofimov, A & Salynsky, N 2019,
Micro-transformer-based integrated digital isolator in 180/90 nm CMOS. в O Stukach (ред.),
2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Proceedings., 8729578, 2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019 International Siberian Conference on Control and Communications, SIBCON 2019, Tomsk, Российская Федерация,
18.04.2019.
https://doi.org/10.1109/SIBCON.2019.8729578APA
Butuzov, V., Nazarenko, A., Bocharov, Y., Kus, O.
, Prokopyev, V., Dmitriev, N., Smirnov, E., Smirnova, T., Trofimov, A., & Salynsky, N. (2019).
Micro-transformer-based integrated digital isolator in 180/90 nm CMOS. в O. Stukach (Ред.),
2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Proceedings [8729578] (2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc..
https://doi.org/10.1109/SIBCON.2019.8729578Vancouver
Butuzov V, Nazarenko A, Bocharov Y, Kus O
, Prokopyev V, Dmitriev N и др.
Micro-transformer-based integrated digital isolator in 180/90 nm CMOS. в Stukach O, Редактор, 2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8729578. (2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Proceedings). doi: 10.1109/SIBCON.2019.8729578
Author
Butuzov, Vladimir ; Nazarenko, Alexey ; Bocharov, Yuri и др. /
Micro-transformer-based integrated digital isolator in 180/90 nm CMOS. 2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Proceedings. Редактор / O Stukach. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Proceedings).
BibTeX
@inproceedings{cbe07a35c14745d1b9720107efabcc0f,
title = "Micro-transformer-based integrated digital isolator in 180/90 nm CMOS",
abstract = "An integrated circuit of a digital isolator comprising a transceiver chip implemented in standard 180 nm CMOS process as well as micro-transformers implemented in a special 90 nm technology is presented. The coreless transformer placed on a separate chip has a stacked structure with two adjacent planar copper windings in two layers separated by a silicon dioxide insulator. The transceiver utilizes a pulse edges encoding technique for transmitting signals through the insulation barrier. The proposed digital isolator has a feature in the topology of the elements, which ensures tolerance to the effects of ionizing radiation, as well as the small size of transformers, which makes it possible to create multichannel integrated circuits in small-sized packages. The tested prototype of the digital isolator provided a data transfer rate of more than 30 Mbps. As much as 2.5 kV isolation voltage is achieved between the coils of transformer.",
keywords = "CMOS technology, Digital isolator, Edge encoding, On-chip transformer, digital isolator, edge encoding, on-chip transformer",
author = "Vladimir Butuzov and Alexey Nazarenko and Yuri Bocharov and Oleg Kus and Vitaly Prokopyev and Nikita Dmitriev and Evgeny Smirnov and Tatiana Smirnova and Aleksei Trofimov and Nikolay Salynsky",
year = "2019",
month = apr,
day = "1",
doi = "10.1109/SIBCON.2019.8729578",
language = "English",
series = "2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "O Stukach",
booktitle = "2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Proceedings",
address = "United States",
note = "2019 International Siberian Conference on Control and Communications, SIBCON 2019 ; Conference date: 18-04-2019 Through 20-04-2019",
}
RIS
TY - GEN
T1 - Micro-transformer-based integrated digital isolator in 180/90 nm CMOS
AU - Butuzov, Vladimir
AU - Nazarenko, Alexey
AU - Bocharov, Yuri
AU - Kus, Oleg
AU - Prokopyev, Vitaly
AU - Dmitriev, Nikita
AU - Smirnov, Evgeny
AU - Smirnova, Tatiana
AU - Trofimov, Aleksei
AU - Salynsky, Nikolay
PY - 2019/4/1
Y1 - 2019/4/1
N2 - An integrated circuit of a digital isolator comprising a transceiver chip implemented in standard 180 nm CMOS process as well as micro-transformers implemented in a special 90 nm technology is presented. The coreless transformer placed on a separate chip has a stacked structure with two adjacent planar copper windings in two layers separated by a silicon dioxide insulator. The transceiver utilizes a pulse edges encoding technique for transmitting signals through the insulation barrier. The proposed digital isolator has a feature in the topology of the elements, which ensures tolerance to the effects of ionizing radiation, as well as the small size of transformers, which makes it possible to create multichannel integrated circuits in small-sized packages. The tested prototype of the digital isolator provided a data transfer rate of more than 30 Mbps. As much as 2.5 kV isolation voltage is achieved between the coils of transformer.
AB - An integrated circuit of a digital isolator comprising a transceiver chip implemented in standard 180 nm CMOS process as well as micro-transformers implemented in a special 90 nm technology is presented. The coreless transformer placed on a separate chip has a stacked structure with two adjacent planar copper windings in two layers separated by a silicon dioxide insulator. The transceiver utilizes a pulse edges encoding technique for transmitting signals through the insulation barrier. The proposed digital isolator has a feature in the topology of the elements, which ensures tolerance to the effects of ionizing radiation, as well as the small size of transformers, which makes it possible to create multichannel integrated circuits in small-sized packages. The tested prototype of the digital isolator provided a data transfer rate of more than 30 Mbps. As much as 2.5 kV isolation voltage is achieved between the coils of transformer.
KW - CMOS technology
KW - Digital isolator
KW - Edge encoding
KW - On-chip transformer
KW - digital isolator
KW - edge encoding
KW - on-chip transformer
UR - http://www.scopus.com/inward/record.url?scp=85068315438&partnerID=8YFLogxK
U2 - 10.1109/SIBCON.2019.8729578
DO - 10.1109/SIBCON.2019.8729578
M3 - Conference contribution
T3 - 2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Proceedings
BT - 2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Proceedings
A2 - Stukach, O
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 International Siberian Conference on Control and Communications, SIBCON 2019
Y2 - 18 April 2019 through 20 April 2019
ER -
