Standard

Mesoscopic Conductance Fluctuations in 2D HgTe Semimetal. / Khudaiberdiev, Daniiar; Kvon, Ze Don; Entin, Matvey V и др.

в: Nanomaterials, Том 13, № 21, 2882, 31.10.2023.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Khudaiberdiev, D, Kvon, ZD, Entin, MV, Kozlov, DA, Mikhailov, NN & Ryzhkov, M 2023, 'Mesoscopic Conductance Fluctuations in 2D HgTe Semimetal', Nanomaterials, Том. 13, № 21, 2882. https://doi.org/10.3390/nano13212882

APA

Khudaiberdiev, D., Kvon, Z. D., Entin, M. V., Kozlov, D. A., Mikhailov, N. N., & Ryzhkov, M. (2023). Mesoscopic Conductance Fluctuations in 2D HgTe Semimetal. Nanomaterials, 13(21), [2882]. https://doi.org/10.3390/nano13212882

Vancouver

Khudaiberdiev D, Kvon ZD, Entin MV, Kozlov DA, Mikhailov NN, Ryzhkov M. Mesoscopic Conductance Fluctuations in 2D HgTe Semimetal. Nanomaterials. 2023 окт. 31;13(21):2882. doi: 10.3390/nano13212882

Author

Khudaiberdiev, Daniiar ; Kvon, Ze Don ; Entin, Matvey V и др. / Mesoscopic Conductance Fluctuations in 2D HgTe Semimetal. в: Nanomaterials. 2023 ; Том 13, № 21.

BibTeX

@article{cf1412605150464895f652b0cb1b59e4,
title = "Mesoscopic Conductance Fluctuations in 2D HgTe Semimetal",
abstract = "Mesoscopic conductance fluctuations were discovered in a weak localization regime of a strongly disordered two-dimensional HgTe-based semimetal. These fluctuations exist in macroscopic samples with characteristic sizes of 100 μm and exhibit anomalous dependences on the gate voltage, magnetic field, and temperature. They are absent in the regime of electron metal (at positive gate voltages) and strongly depend on the level of disorder in the system. All the experimental facts lead us to the conclusion that the origin of the fluctuations is a special collective state in which the current is conducted through the percolation network of electron resistances. We suppose that the network is formed by fluctuation potential whose amplitude is higher than the Fermi level of electrons due to their very low density.",
keywords = "quantum wells, two-dimensional semimetal, universal conductance fluctuations",
author = "Daniiar Khudaiberdiev and Kvon, {Ze Don} and Entin, {Matvey V} and Kozlov, {Dmitriy A} and Mikhailov, {Nikolay N} and Maxim Ryzhkov",
note = "Authors acknowledge for financial support Ministry of Science and Higher Education of the Russian Federation, Grant No. 075-15-2020-797(13.1902.21.0024).",
year = "2023",
month = oct,
day = "31",
doi = "10.3390/nano13212882",
language = "English",
volume = "13",
journal = "Nanomaterials",
issn = "2079-4991",
publisher = "MDPI AG",
number = "21",

}

RIS

TY - JOUR

T1 - Mesoscopic Conductance Fluctuations in 2D HgTe Semimetal

AU - Khudaiberdiev, Daniiar

AU - Kvon, Ze Don

AU - Entin, Matvey V

AU - Kozlov, Dmitriy A

AU - Mikhailov, Nikolay N

AU - Ryzhkov, Maxim

N1 - Authors acknowledge for financial support Ministry of Science and Higher Education of the Russian Federation, Grant No. 075-15-2020-797(13.1902.21.0024).

PY - 2023/10/31

Y1 - 2023/10/31

N2 - Mesoscopic conductance fluctuations were discovered in a weak localization regime of a strongly disordered two-dimensional HgTe-based semimetal. These fluctuations exist in macroscopic samples with characteristic sizes of 100 μm and exhibit anomalous dependences on the gate voltage, magnetic field, and temperature. They are absent in the regime of electron metal (at positive gate voltages) and strongly depend on the level of disorder in the system. All the experimental facts lead us to the conclusion that the origin of the fluctuations is a special collective state in which the current is conducted through the percolation network of electron resistances. We suppose that the network is formed by fluctuation potential whose amplitude is higher than the Fermi level of electrons due to their very low density.

AB - Mesoscopic conductance fluctuations were discovered in a weak localization regime of a strongly disordered two-dimensional HgTe-based semimetal. These fluctuations exist in macroscopic samples with characteristic sizes of 100 μm and exhibit anomalous dependences on the gate voltage, magnetic field, and temperature. They are absent in the regime of electron metal (at positive gate voltages) and strongly depend on the level of disorder in the system. All the experimental facts lead us to the conclusion that the origin of the fluctuations is a special collective state in which the current is conducted through the percolation network of electron resistances. We suppose that the network is formed by fluctuation potential whose amplitude is higher than the Fermi level of electrons due to their very low density.

KW - quantum wells

KW - two-dimensional semimetal

KW - universal conductance fluctuations

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85176576822&origin=inward&txGid=ba39fbd617634cc0acbfd6cba622bb1d

UR - https://www.mendeley.com/catalogue/36b7b1ad-3ae9-3ffb-be38-1efa85874676/

U2 - 10.3390/nano13212882

DO - 10.3390/nano13212882

M3 - Article

C2 - 37947727

VL - 13

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 21

M1 - 2882

ER -

ID: 57540106