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Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures. / Nikiforov, V. E.; Abramkin, D. S.; Shamirzaev, T. S.

в: Semiconductors, Том 51, № 11, 01.11.2017, стр. 1513-1516.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Nikiforov, VE, Abramkin, DS & Shamirzaev, TS 2017, 'Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures', Semiconductors, Том. 51, № 11, стр. 1513-1516. https://doi.org/10.1134/S1063782617110203

APA

Nikiforov, V. E., Abramkin, D. S., & Shamirzaev, T. S. (2017). Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures. Semiconductors, 51(11), 1513-1516. https://doi.org/10.1134/S1063782617110203

Vancouver

Nikiforov VE, Abramkin DS, Shamirzaev TS. Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures. Semiconductors. 2017 нояб. 1;51(11):1513-1516. doi: 10.1134/S1063782617110203

Author

Nikiforov, V. E. ; Abramkin, D. S. ; Shamirzaev, T. S. / Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures. в: Semiconductors. 2017 ; Том 51, № 11. стр. 1513-1516.

BibTeX

@article{8c57a0aa72d7455a8b5ea8b112a1f1e5,
title = "Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures",
abstract = "It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these heterostructures always contains a GaAs/AlAs heterojunction. Here, it is demonstrated that, under nonresonant photoexcitation, the photoluminescence spectrum of AlAs-based heterostructures features a band associated with this heterojunction. The intensity of this band is determined by the thickness and doping type of the GaAs cap layer.",
author = "Nikiforov, {V. E.} and Abramkin, {D. S.} and Shamirzaev, {T. S.}",
year = "2017",
month = nov,
day = "1",
doi = "10.1134/S1063782617110203",
language = "English",
volume = "51",
pages = "1513--1516",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "11",

}

RIS

TY - JOUR

T1 - Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures

AU - Nikiforov, V. E.

AU - Abramkin, D. S.

AU - Shamirzaev, T. S.

PY - 2017/11/1

Y1 - 2017/11/1

N2 - It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these heterostructures always contains a GaAs/AlAs heterojunction. Here, it is demonstrated that, under nonresonant photoexcitation, the photoluminescence spectrum of AlAs-based heterostructures features a band associated with this heterojunction. The intensity of this band is determined by the thickness and doping type of the GaAs cap layer.

AB - It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these heterostructures always contains a GaAs/AlAs heterojunction. Here, it is demonstrated that, under nonresonant photoexcitation, the photoluminescence spectrum of AlAs-based heterostructures features a band associated with this heterojunction. The intensity of this band is determined by the thickness and doping type of the GaAs cap layer.

UR - http://www.scopus.com/inward/record.url?scp=85035060251&partnerID=8YFLogxK

U2 - 10.1134/S1063782617110203

DO - 10.1134/S1063782617110203

M3 - Article

AN - SCOPUS:85035060251

VL - 51

SP - 1513

EP - 1516

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 11

ER -

ID: 9672691