TY - JOUR

T1 - Low-Frequency Microwave Response of a Quantum Point Contact

AU - Tkachenko, V. A.

AU - Yaroshevich, A. S.

AU - Kvon, Z. D.

AU - Tkachenko, O. A.

AU - Rodyakina, E. E.

AU - Latyshev, A. V.

N1 - Funding Information: This study was supported by the Russian Foundation for Basic Research (project no. 20-02-00385) and the Ministry of Science and Higher Education of the Russian Federation (state assignment for the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences). Publisher Copyright: © 2021, Pleiades Publishing, Inc.

PY - 2021/7

Y1 - 2021/7

N2 - The low-frequency microwave photoconductance of a short (100 nm) quantum point contact based on a high-mobility two-dimensional electron gas in the frequency range of 2–3 GHz is investigated for the first time. The giant photoconductance in the tunneling regime and the negative photoconductance in the open regime are observed. It is shown by numerical simulations that such response to microwave irradiation is caused by the forced oscillations of the saddle-point potential in the quantum point contact and of the probe voltage applied to the contact.

AB - The low-frequency microwave photoconductance of a short (100 nm) quantum point contact based on a high-mobility two-dimensional electron gas in the frequency range of 2–3 GHz is investigated for the first time. The giant photoconductance in the tunneling regime and the negative photoconductance in the open regime are observed. It is shown by numerical simulations that such response to microwave irradiation is caused by the forced oscillations of the saddle-point potential in the quantum point contact and of the probe voltage applied to the contact.

UR - http://www.scopus.com/inward/record.url?scp=85115371065&partnerID=8YFLogxK

U2 - 10.1134/S0021364021140101

DO - 10.1134/S0021364021140101

M3 - Article

AN - SCOPUS:85115371065

VL - 114

SP - 110

EP - 115

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 2

ER -