TY - JOUR

T1 - Laser induced damage threshold of GaSe with antireflection microstructures at a wavelength of 5 µm

AU - Kharitonova, Polina

AU - Isaenko, Lyudmila

AU - Doroshenko, Maksim

AU - Smetanin, Sergei

AU - Kochukov, Yuri

AU - Lobanov, Sergei

AU - Yelisseyev, Alexander

AU - Goloshumova, Alina

AU - Bushunov, Andrey

AU - Teslenko, Andrei

AU - Lazarev, Vladimir

AU - Tarabrin, Mikhail

N1 - Ministry of Science and Higher Education of the Russian Federation (122041400031-2); Russian Science Foundation (20-72-10027-P).

PY - 2024/2/26

Y1 - 2024/2/26

N2 - Large GaSe crystals were grown and various antireflection microstructures (ARMs) were fabricated on their cleaved surfaces using optimized femtosecond laser ablation, which provided the antireflection effect in a wide wavelength range of 4-16 µm. The influence of ARMs created on the GaSe surface on the change of the laser-induced damage threshold (LIDT) of the crystal at a wavelength of 5 μm was evaluated. The 5-µm Fe:ZnMgSe laser with the pulse duration of 135 ns was used for the LIDT test in conditions close to single pulse exposure. The measured values of LIDT of 56 ± 6 MW/cm 2 and 51 ± 9 MW/cm 2 for two GaSe substrates, respectively, were comparable with the known data of single pulse LIDT of GaSe. The average LIDT intensities of 54 ± 6 MW/cm 2 and 52 ± 7 MW/cm 2 for the ARMs at two GaSe plates, respectively, were close to LIDT intensities for the corresponding GaSe substrates. The ARMs with lower structural quality had lower LIDT (50-52 MW/cm 2 ) in comparison with the high-quality ARMs (58-60 MW/cm 2 ). High LIDT for high-quality ARMs can be caused by increased selenium content in the ARMs. In any case, all the tested ARMs on the GaSe plates with different surface quality are workable for development of widely tunable mid-infrared nonlinear optical converters.

AB - Large GaSe crystals were grown and various antireflection microstructures (ARMs) were fabricated on their cleaved surfaces using optimized femtosecond laser ablation, which provided the antireflection effect in a wide wavelength range of 4-16 µm. The influence of ARMs created on the GaSe surface on the change of the laser-induced damage threshold (LIDT) of the crystal at a wavelength of 5 μm was evaluated. The 5-µm Fe:ZnMgSe laser with the pulse duration of 135 ns was used for the LIDT test in conditions close to single pulse exposure. The measured values of LIDT of 56 ± 6 MW/cm 2 and 51 ± 9 MW/cm 2 for two GaSe substrates, respectively, were comparable with the known data of single pulse LIDT of GaSe. The average LIDT intensities of 54 ± 6 MW/cm 2 and 52 ± 7 MW/cm 2 for the ARMs at two GaSe plates, respectively, were close to LIDT intensities for the corresponding GaSe substrates. The ARMs with lower structural quality had lower LIDT (50-52 MW/cm 2 ) in comparison with the high-quality ARMs (58-60 MW/cm 2 ). High LIDT for high-quality ARMs can be caused by increased selenium content in the ARMs. In any case, all the tested ARMs on the GaSe plates with different surface quality are workable for development of widely tunable mid-infrared nonlinear optical converters.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85186269439&origin=inward&txGid=8275269c4c1aa2793b5307f1a44fcbbd

UR - https://www.mendeley.com/catalogue/17c6f9b5-dfc8-3edb-b83b-98187bae317f/

U2 - 10.1364/oe.507440

DO - 10.1364/oe.507440

M3 - Article

C2 - 38439446

VL - 32

SP - 7710

EP - 7719

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 5

ER -