TY - JOUR

T1 - Large area MoS2 thin film growth by direct sulfurization

AU - Yang, Kai-Yao

AU - Nguyen, Hong-Thai

AU - Tsao, Yu-Ming

AU - Artemkina, Sofya B

AU - Fedorov, Vladimir E

AU - Huang, Chien-Wei

AU - Wang, Hsiang-Chen

N1 - Funding: Tis research was supported by the National Science and Technology Council, Te Republic of China under the Grants NSTC 111-2221-E-194-007. Tis work was fnancially/partially supported by the Kaohsiung Armed Forces General Hospital research project KAFGH_D_112032 in Taiwan. © 2023. The Author(s).

PY - 2023/5/24

Y1 - 2023/5/24

N2 - In this study, we present the growth of monolayer MoS2 (molybdenum disulfide) film. Mo (molybdenum) film was formed on a sapphire substrate through e-beam evaporation, and triangular MoS2 film was grown by direct sulfurization. First, the growth of MoS2 was observed under an optical microscope. The number of MoS2 layers was analyzed by Raman spectrum, atomic force microscope (AFM), and photoluminescence spectroscopy (PL) measurement. Different sapphire substrate regions have different growth conditions of MoS2. The growth of MoS2 is optimized by controlling the amount and location of precursors, adjusting the appropriate growing temperature and time, and establishing proper ventilation. Experimental results show the successful growth of a large-area single-layer MoS2 on a sapphire substrate through direct sulfurization under a suitable environment. The thickness of the MoS2 film determined by AFM measurement is about 0.73 nm. The peak difference between the Raman measurement shift of 386 and 405 cm-1 is 19.1 cm-1, and the peak of PL measurement is about 677 nm, which is converted into energy of 1.83 eV, which is the size of the direct energy gap of the MoS2 thin film. The results verify the distribution of the number of grown layers. Based on the observation of the optical microscope (OM) images, MoS2 continuously grows from a single layer of discretely distributed triangular single-crystal grains into a single-layer large-area MoS2 film. This work provides a reference for growing MoS2 in a large area. We expect to apply this structure to various heterojunctions, sensors, solar cells, and thin-film transistors.

AB - In this study, we present the growth of monolayer MoS2 (molybdenum disulfide) film. Mo (molybdenum) film was formed on a sapphire substrate through e-beam evaporation, and triangular MoS2 film was grown by direct sulfurization. First, the growth of MoS2 was observed under an optical microscope. The number of MoS2 layers was analyzed by Raman spectrum, atomic force microscope (AFM), and photoluminescence spectroscopy (PL) measurement. Different sapphire substrate regions have different growth conditions of MoS2. The growth of MoS2 is optimized by controlling the amount and location of precursors, adjusting the appropriate growing temperature and time, and establishing proper ventilation. Experimental results show the successful growth of a large-area single-layer MoS2 on a sapphire substrate through direct sulfurization under a suitable environment. The thickness of the MoS2 film determined by AFM measurement is about 0.73 nm. The peak difference between the Raman measurement shift of 386 and 405 cm-1 is 19.1 cm-1, and the peak of PL measurement is about 677 nm, which is converted into energy of 1.83 eV, which is the size of the direct energy gap of the MoS2 thin film. The results verify the distribution of the number of grown layers. Based on the observation of the optical microscope (OM) images, MoS2 continuously grows from a single layer of discretely distributed triangular single-crystal grains into a single-layer large-area MoS2 film. This work provides a reference for growing MoS2 in a large area. We expect to apply this structure to various heterojunctions, sensors, solar cells, and thin-film transistors.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85160131596&origin=inward&txGid=269ffc1ac98465535f0278c76b74ff36

UR - https://www.mendeley.com/catalogue/a67fe35b-a373-342d-906c-744408d8664f/

U2 - 10.1038/s41598-023-35596-5

DO - 10.1038/s41598-023-35596-5

M3 - Article

C2 - 37225785

VL - 13

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 8378

ER -