Kinetically driven thermal roughening of semiconductor surfaces: experiment on GaAs and Monte Carlo simulation

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Kinetically driven thermal roughening of semiconductor surfaces: experiment on GaAs and Monte Carlo simulation. / Kazantsev, D. M.; Akhundov, I. O.; Kozhuhov, A. S. и др.

в: Physica Scripta, Том 98, № 3, 035702, 01.03.2023.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{4a2c88f08d754cf48b2e8abf145da15c,

title = "Kinetically driven thermal roughening of semiconductor surfaces: experiment on GaAs and Monte Carlo simulation",

abstract = "We present the results of GaAs annealing experiments in the conditions near equilibrium, which clarify the reasons of the transition from surface smoothing to roughening at temperatures above 650 °C. The roughening is due to kinetic instabilities arising under deviation of annealing conditions towards growth or sublimation. These instabilities reveal themselves in appearing islands (for sublimation) and pits (for growth) of multilayer heights and depths, respectively. The islands and pits appear due to the motion of atomic steps through surface spots, at which sublimation and growth are suppressed. Pinning of the steps at these spots also lead to step bunching at surfaces with sufficiently small terrace widths. This explanation is consistent with Monte Carlo simulations of atomic processes on the GaAs surface. The similarity and distinctions in surface roughening under sublimation and growth, along with the role of Schw{\"o}bel barrier, are discussed. Annealing experiments in the cavities, which are formed by GaAs substrates with well-controlled atomic step densities enabled us to clarify the roughening mechanisms and to improve the efficiency of GaAs thermal smoothing technique by increasing smoothing temperature up to 775 °C.",

keywords = "GaAs, Monte Carlo simulation, atomic steps, kinetic instabilities, surface roughening, surface smoothing",

author = "Kazantsev, {D. M.} and Akhundov, {I. O.} and Kozhuhov, {A. S.} and Khoroshilov, {V. S.} and Shwartz, {N. L.} and Alperovich, {V. L.} and Latyshev, {A. V.}",

note = "This study was supported by the Ministry of Science and Higher Education of the Russian Federation.",

year = "2023",

month = mar,

day = "1",

doi = "10.1088/1402-4896/acb6bc",

language = "English",

volume = "98",

journal = "Physica Scripta",

issn = "0031-8949",

publisher = "IOP Publishing Ltd.",

number = "3",

}

RIS

TY - JOUR

T1 - Kinetically driven thermal roughening of semiconductor surfaces: experiment on GaAs and Monte Carlo simulation

AU - Kazantsev, D. M.

AU - Akhundov, I. O.

AU - Kozhuhov, A. S.

AU - Khoroshilov, V. S.

AU - Shwartz, N. L.

AU - Alperovich, V. L.

AU - Latyshev, A. V.

N1 - This study was supported by the Ministry of Science and Higher Education of the Russian Federation.

PY - 2023/3/1

Y1 - 2023/3/1

N2 - We present the results of GaAs annealing experiments in the conditions near equilibrium, which clarify the reasons of the transition from surface smoothing to roughening at temperatures above 650 °C. The roughening is due to kinetic instabilities arising under deviation of annealing conditions towards growth or sublimation. These instabilities reveal themselves in appearing islands (for sublimation) and pits (for growth) of multilayer heights and depths, respectively. The islands and pits appear due to the motion of atomic steps through surface spots, at which sublimation and growth are suppressed. Pinning of the steps at these spots also lead to step bunching at surfaces with sufficiently small terrace widths. This explanation is consistent with Monte Carlo simulations of atomic processes on the GaAs surface. The similarity and distinctions in surface roughening under sublimation and growth, along with the role of Schwöbel barrier, are discussed. Annealing experiments in the cavities, which are formed by GaAs substrates with well-controlled atomic step densities enabled us to clarify the roughening mechanisms and to improve the efficiency of GaAs thermal smoothing technique by increasing smoothing temperature up to 775 °C.

AB - We present the results of GaAs annealing experiments in the conditions near equilibrium, which clarify the reasons of the transition from surface smoothing to roughening at temperatures above 650 °C. The roughening is due to kinetic instabilities arising under deviation of annealing conditions towards growth or sublimation. These instabilities reveal themselves in appearing islands (for sublimation) and pits (for growth) of multilayer heights and depths, respectively. The islands and pits appear due to the motion of atomic steps through surface spots, at which sublimation and growth are suppressed. Pinning of the steps at these spots also lead to step bunching at surfaces with sufficiently small terrace widths. This explanation is consistent with Monte Carlo simulations of atomic processes on the GaAs surface. The similarity and distinctions in surface roughening under sublimation and growth, along with the role of Schwöbel barrier, are discussed. Annealing experiments in the cavities, which are formed by GaAs substrates with well-controlled atomic step densities enabled us to clarify the roughening mechanisms and to improve the efficiency of GaAs thermal smoothing technique by increasing smoothing temperature up to 775 °C.

KW - GaAs

KW - Monte Carlo simulation

KW - atomic steps

KW - kinetic instabilities

KW - surface roughening

KW - surface smoothing

UR - https://www.scopus.com/inward/record.url?eid=2-s2.0-85147798759&partnerID=40&md5=b8be110314d281ec363c6641b0ef2cc7

UR - https://www.mendeley.com/catalogue/51b6a638-187d-32f6-92a1-44151627c4e5/

U2 - 10.1088/1402-4896/acb6bc

DO - 10.1088/1402-4896/acb6bc

M3 - Article

VL - 98

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

IS - 3

M1 - 035702

ER -

ID: 49452799