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I-V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide. / Alekseev, P. A.; Geydt, P.; Dunaevskiy, M. S. и др.

в: Applied Physics Letters, Том 111, № 13, 132104, 25.09.2017.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Alekseev, PA, Geydt, P, Dunaevskiy, MS, Lähderanta, E, Haggrén, T, Kakko, JP & Lipsanen, H 2017, 'I-V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide', Applied Physics Letters, Том. 111, № 13, 132104. https://doi.org/10.1063/1.5005125

APA

Alekseev, P. A., Geydt, P., Dunaevskiy, M. S., Lähderanta, E., Haggrén, T., Kakko, J. P., & Lipsanen, H. (2017). I-V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide. Applied Physics Letters, 111(13), [132104]. https://doi.org/10.1063/1.5005125

Vancouver

Alekseev PA, Geydt P, Dunaevskiy MS, Lähderanta E, Haggrén T, Kakko JP и др. I-V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide. Applied Physics Letters. 2017 сент. 25;111(13):132104. doi: 10.1063/1.5005125

Author

Alekseev, P. A. ; Geydt, P. ; Dunaevskiy, M. S. и др. / I-V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide. в: Applied Physics Letters. 2017 ; Том 111, № 13.

BibTeX

@article{b2109f5c40594337be7b5f9996410d9a,
title = "I-V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide",
abstract = "The control of nanowire-based device performance requires knowledge about the transport of charge carriers and its limiting factors. We present the experimental and modeled results of a study of electrical properties of GaAs nanowires (NWs), considering their native oxide cover. Measurements of individual vertical NWs were performed by conductive atomic force microscopy (C-AFM). Experimental C-AFM observations with numerical simulations revealed the complex resistive behavior of NWs. A hysteresis of current-voltage characteristics of the p-doped NWs as-grown on substrates with different types of doping was registered. The emergence of hysteresis was explained by the trapping of majority carriers in the surface oxide layer near the reverse-biased barriers under the source-drain current. It was found that the accumulation of charge increases the current for highly doped p+-NWs on n+-substrates, while for moderately doped p-NWs on p+-substrates, charge accumulation decreases the current due to blocking of the conductive channel of NWs.",
author = "Alekseev, {P. A.} and P. Geydt and Dunaevskiy, {M. S.} and E. L{\"a}hderanta and T. Haggr{\'e}n and Kakko, {J. P.} and H. Lipsanen",
note = "Funding Information: The reported study was funded by RFBR according to the Research Project 16-32-60147 mol_a_dk. M.S.D. acknowledges financial support from the Government of Russian Federation (Grant 074-U01). Publisher Copyright: {\textcopyright} 2017 Author(s).",
year = "2017",
month = sep,
day = "25",
doi = "10.1063/1.5005125",
language = "English",
volume = "111",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "13",

}

RIS

TY - JOUR

T1 - I-V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide

AU - Alekseev, P. A.

AU - Geydt, P.

AU - Dunaevskiy, M. S.

AU - Lähderanta, E.

AU - Haggrén, T.

AU - Kakko, J. P.

AU - Lipsanen, H.

N1 - Funding Information: The reported study was funded by RFBR according to the Research Project 16-32-60147 mol_a_dk. M.S.D. acknowledges financial support from the Government of Russian Federation (Grant 074-U01). Publisher Copyright: © 2017 Author(s).

PY - 2017/9/25

Y1 - 2017/9/25

N2 - The control of nanowire-based device performance requires knowledge about the transport of charge carriers and its limiting factors. We present the experimental and modeled results of a study of electrical properties of GaAs nanowires (NWs), considering their native oxide cover. Measurements of individual vertical NWs were performed by conductive atomic force microscopy (C-AFM). Experimental C-AFM observations with numerical simulations revealed the complex resistive behavior of NWs. A hysteresis of current-voltage characteristics of the p-doped NWs as-grown on substrates with different types of doping was registered. The emergence of hysteresis was explained by the trapping of majority carriers in the surface oxide layer near the reverse-biased barriers under the source-drain current. It was found that the accumulation of charge increases the current for highly doped p+-NWs on n+-substrates, while for moderately doped p-NWs on p+-substrates, charge accumulation decreases the current due to blocking of the conductive channel of NWs.

AB - The control of nanowire-based device performance requires knowledge about the transport of charge carriers and its limiting factors. We present the experimental and modeled results of a study of electrical properties of GaAs nanowires (NWs), considering their native oxide cover. Measurements of individual vertical NWs were performed by conductive atomic force microscopy (C-AFM). Experimental C-AFM observations with numerical simulations revealed the complex resistive behavior of NWs. A hysteresis of current-voltage characteristics of the p-doped NWs as-grown on substrates with different types of doping was registered. The emergence of hysteresis was explained by the trapping of majority carriers in the surface oxide layer near the reverse-biased barriers under the source-drain current. It was found that the accumulation of charge increases the current for highly doped p+-NWs on n+-substrates, while for moderately doped p-NWs on p+-substrates, charge accumulation decreases the current due to blocking of the conductive channel of NWs.

UR - http://www.scopus.com/inward/record.url?scp=85030227565&partnerID=8YFLogxK

UR - https://www.elibrary.ru/item.asp?id=31065867

U2 - 10.1063/1.5005125

DO - 10.1063/1.5005125

M3 - Article

AN - SCOPUS:85030227565

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

M1 - 132104

ER -

ID: 35359418