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Ion-beam synthesis of InSb nanocrystals at the Si/SiO2 interface. / Tyschenko, Ida; Zhang, Ruonan; Volodin, Vladimir и др.

в: Materials Letters, Том 306, 131027, 01.01.2022.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Tyschenko, I, Zhang, R, Volodin, V & Popov, V 2022, 'Ion-beam synthesis of InSb nanocrystals at the Si/SiO2 interface', Materials Letters, Том. 306, 131027. https://doi.org/10.1016/j.matlet.2021.131027

APA

Tyschenko, I., Zhang, R., Volodin, V., & Popov, V. (2022). Ion-beam synthesis of InSb nanocrystals at the Si/SiO2 interface. Materials Letters, 306, [131027]. https://doi.org/10.1016/j.matlet.2021.131027

Vancouver

Tyschenko I, Zhang R, Volodin V, Popov V. Ion-beam synthesis of InSb nanocrystals at the Si/SiO2 interface. Materials Letters. 2022 янв. 1;306:131027. doi: 10.1016/j.matlet.2021.131027

Author

Tyschenko, Ida ; Zhang, Ruonan ; Volodin, Vladimir и др. / Ion-beam synthesis of InSb nanocrystals at the Si/SiO2 interface. в: Materials Letters. 2022 ; Том 306.

BibTeX

@article{70868debc94f4de3951fd17d3c7abd0d,
title = "Ion-beam synthesis of InSb nanocrystals at the Si/SiO2 interface",
abstract = "The formation of InSb nanocrystals at the bonding Si/SiO2 interface of silicon-on-insulator structure was obtained as a result of the In and Sb atom diffusion from the ion-implanted SiO2 and Si regions, respectively, toward the interface. After the annealing at 1000 °C, the Raman scattering peaks corresponding to the transverse and longitudinal optical phonon mode in the monocrystalline InSb matrix were obtained. As the annealing temperature grew to 1100 °C, the transverse optical phonon mode vanished and the longitudinal optical phonon mode dominated in the spectrum. This effect is explained by matching InSb and Si lattice constants under ion-beam synthesis conditions.",
keywords = "Antimony, Diffusion, Indium, Ion implantation, Nanocrystals, Si/SiO interface",
author = "Ida Tyschenko and Ruonan Zhang and Vladimir Volodin and Vladimir Popov",
note = "Funding Information: We are grateful to A.G. Cherkov for his help in the TEM investigations. The study was supported by the Ministry of Education and Science of the Russian Federation [Project GZ 0242-2021-0003]. Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",
year = "2022",
month = jan,
day = "1",
doi = "10.1016/j.matlet.2021.131027",
language = "English",
volume = "306",
journal = "Materials Letters",
issn = "0167-577X",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Ion-beam synthesis of InSb nanocrystals at the Si/SiO2 interface

AU - Tyschenko, Ida

AU - Zhang, Ruonan

AU - Volodin, Vladimir

AU - Popov, Vladimir

N1 - Funding Information: We are grateful to A.G. Cherkov for his help in the TEM investigations. The study was supported by the Ministry of Education and Science of the Russian Federation [Project GZ 0242-2021-0003]. Publisher Copyright: © 2021 Elsevier B.V.

PY - 2022/1/1

Y1 - 2022/1/1

N2 - The formation of InSb nanocrystals at the bonding Si/SiO2 interface of silicon-on-insulator structure was obtained as a result of the In and Sb atom diffusion from the ion-implanted SiO2 and Si regions, respectively, toward the interface. After the annealing at 1000 °C, the Raman scattering peaks corresponding to the transverse and longitudinal optical phonon mode in the monocrystalline InSb matrix were obtained. As the annealing temperature grew to 1100 °C, the transverse optical phonon mode vanished and the longitudinal optical phonon mode dominated in the spectrum. This effect is explained by matching InSb and Si lattice constants under ion-beam synthesis conditions.

AB - The formation of InSb nanocrystals at the bonding Si/SiO2 interface of silicon-on-insulator structure was obtained as a result of the In and Sb atom diffusion from the ion-implanted SiO2 and Si regions, respectively, toward the interface. After the annealing at 1000 °C, the Raman scattering peaks corresponding to the transverse and longitudinal optical phonon mode in the monocrystalline InSb matrix were obtained. As the annealing temperature grew to 1100 °C, the transverse optical phonon mode vanished and the longitudinal optical phonon mode dominated in the spectrum. This effect is explained by matching InSb and Si lattice constants under ion-beam synthesis conditions.

KW - Antimony

KW - Diffusion

KW - Indium

KW - Ion implantation

KW - Nanocrystals

KW - Si/SiO interface

UR - http://www.scopus.com/inward/record.url?scp=85116892587&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2021.131027

DO - 10.1016/j.matlet.2021.131027

M3 - Article

AN - SCOPUS:85116892587

VL - 306

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

M1 - 131027

ER -

ID: 34678339