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Investigation of Hf(Zr)O2 film ferroelectric properties grown by atomic layer deposition method. / Iskhakzay, Ramin M.H.; Aliev, Vladimir Sh; Gritsenko, Vladimir A.

2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings. Том 2018-July IEEE Computer Society, 2018. стр. 12-15 8434958.

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование

Harvard

Iskhakzay, RMH, Aliev, VS & Gritsenko, VA 2018, Investigation of Hf(Zr)O2 film ferroelectric properties grown by atomic layer deposition method. в 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings. Том. 2018-July, 8434958, IEEE Computer Society, стр. 12-15, 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018, Erlagol, Altai, Российская Федерация, 29.06.2018. https://doi.org/10.1109/EDM.2018.8434958

APA

Iskhakzay, R. M. H., Aliev, V. S., & Gritsenko, V. A. (2018). Investigation of Hf(Zr)O2 film ferroelectric properties grown by atomic layer deposition method. в 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings (Том 2018-July, стр. 12-15). [8434958] IEEE Computer Society. https://doi.org/10.1109/EDM.2018.8434958

Vancouver

Iskhakzay RMH, Aliev VS, Gritsenko VA. Investigation of Hf(Zr)O2 film ferroelectric properties grown by atomic layer deposition method. в 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings. Том 2018-July. IEEE Computer Society. 2018. стр. 12-15. 8434958 doi: 10.1109/EDM.2018.8434958

Author

Iskhakzay, Ramin M.H. ; Aliev, Vladimir Sh ; Gritsenko, Vladimir A. / Investigation of Hf(Zr)O2 film ferroelectric properties grown by atomic layer deposition method. 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings. Том 2018-July IEEE Computer Society, 2018. стр. 12-15

BibTeX

@inproceedings{8b83ad1b0f724f97b5a3bc44be61a547,
title = "Investigation of Hf(Zr)O2 film ferroelectric properties grown by atomic layer deposition method",
abstract = "The results of the film ferroelectric properties investigation based on mixed oxide Hf(Zr)O2 are described. The Hf(Zr)O2 structures I-V characteristics were measured and analyzed before and after the 'wake up' operation, and the electric field dependence of the polarization P(E) was calculated. The switching cycles number dependence of the maximum polarization Pmax(n) was obtained, and the stability of Hf(Zr)O2-based structures to 107 switching cycles was confirmed.",
keywords = "'Wake up' operation, Ferroelectric memory, Ferroelectricit, Hf(Zr)O structure, Nonvolatile memory",
author = "Iskhakzay, {Ramin M.H.} and Aliev, {Vladimir Sh} and Gritsenko, {Vladimir A.}",
year = "2018",
month = aug,
day = "13",
doi = "10.1109/EDM.2018.8434958",
language = "English",
isbn = "9781538650219",
volume = "2018-July",
pages = "12--15",
booktitle = "2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings",
publisher = "IEEE Computer Society",
address = "United States",
note = "19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 ; Conference date: 29-06-2018 Through 03-07-2018",

}

RIS

TY - GEN

T1 - Investigation of Hf(Zr)O2 film ferroelectric properties grown by atomic layer deposition method

AU - Iskhakzay, Ramin M.H.

AU - Aliev, Vladimir Sh

AU - Gritsenko, Vladimir A.

PY - 2018/8/13

Y1 - 2018/8/13

N2 - The results of the film ferroelectric properties investigation based on mixed oxide Hf(Zr)O2 are described. The Hf(Zr)O2 structures I-V characteristics were measured and analyzed before and after the 'wake up' operation, and the electric field dependence of the polarization P(E) was calculated. The switching cycles number dependence of the maximum polarization Pmax(n) was obtained, and the stability of Hf(Zr)O2-based structures to 107 switching cycles was confirmed.

AB - The results of the film ferroelectric properties investigation based on mixed oxide Hf(Zr)O2 are described. The Hf(Zr)O2 structures I-V characteristics were measured and analyzed before and after the 'wake up' operation, and the electric field dependence of the polarization P(E) was calculated. The switching cycles number dependence of the maximum polarization Pmax(n) was obtained, and the stability of Hf(Zr)O2-based structures to 107 switching cycles was confirmed.

KW - 'Wake up' operation

KW - Ferroelectric memory

KW - Ferroelectricit

KW - Hf(Zr)O structure

KW - Nonvolatile memory

UR - http://www.scopus.com/inward/record.url?scp=85052384373&partnerID=8YFLogxK

U2 - 10.1109/EDM.2018.8434958

DO - 10.1109/EDM.2018.8434958

M3 - Conference contribution

AN - SCOPUS:85052384373

SN - 9781538650219

VL - 2018-July

SP - 12

EP - 15

BT - 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings

PB - IEEE Computer Society

T2 - 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018

Y2 - 29 June 2018 through 3 July 2018

ER -

ID: 16246897