TY - JOUR

T1 - Influence of the Growth Temperature on the Defective Structure of the Multi-Walled Carbon Nanotubes

AU - Krasnikov, Dmitry V.

AU - Bokova-Sirosh, Sofya N.

AU - Tsendsuren, Tsog Ochir

AU - Romanenko, Anatoly I.

AU - Obraztsova, Elena D.

AU - Volodin, Vladimir A.

AU - Kuznetsov, Vladimir L.

N1 - Publisher Copyright: © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2018/1/1

Y1 - 2018/1/1

N2 - The present paper is devoted to the influence of the growth temperature of multi-walled carbon nanotubes (MWCNTs) on their defective structure. The MWCNTs obtained within the range of 610–750 °C have been studied using two methods: Raman spectroscopy and the analysis of the temperature dependence of conductivity. This approach allows us to obtain independent data on the concentration of the defects within the MWCNTs via the intensity ratio of 2D and D bands, on one hand, and charge carrier concentration, on the other hand. The results obtained using Raman spectroscopy and the analysis of the conductivity have provided asymptotic and volcano-like curves, respectively, of defect concentration within the temperature range studied. This can be attributed to the difference in the probing depth of each method (∼50 nm for Raman spectroscopy, and ∼2–3 nm for conductivity measurements) providing different sensitivity to surface impurities or defects. The secondary factors (the size of the active component, the amount of the lateral carbon deposits) have been shown to mask the influence of the growth temperature. Nevertheless, as these secondary factors and the synthesis temperature independently affect the effective nanotube defectiveness, we have shown the defect concentration to fall with increasing MWCNT growth temperature.

AB - The present paper is devoted to the influence of the growth temperature of multi-walled carbon nanotubes (MWCNTs) on their defective structure. The MWCNTs obtained within the range of 610–750 °C have been studied using two methods: Raman spectroscopy and the analysis of the temperature dependence of conductivity. This approach allows us to obtain independent data on the concentration of the defects within the MWCNTs via the intensity ratio of 2D and D bands, on one hand, and charge carrier concentration, on the other hand. The results obtained using Raman spectroscopy and the analysis of the conductivity have provided asymptotic and volcano-like curves, respectively, of defect concentration within the temperature range studied. This can be attributed to the difference in the probing depth of each method (∼50 nm for Raman spectroscopy, and ∼2–3 nm for conductivity measurements) providing different sensitivity to surface impurities or defects. The secondary factors (the size of the active component, the amount of the lateral carbon deposits) have been shown to mask the influence of the growth temperature. Nevertheless, as these secondary factors and the synthesis temperature independently affect the effective nanotube defectiveness, we have shown the defect concentration to fall with increasing MWCNT growth temperature.

KW - conductivity

KW - defects

KW - multi-walled carbon nanotubes

KW - Raman spectroscopy

KW - RAMAN-SPECTRA

KW - ACTIVATION

KW - CHEMICAL-VAPOR-DEPOSITION

KW - GRAPHENE

KW - PARAMETERS

KW - CATALYST

KW - MASS-PRODUCTION

KW - CVD

KW - CIRCUITS

KW - FLUIDIZED-BEDS

UR - http://www.scopus.com/inward/record.url?scp=85040795019&partnerID=8YFLogxK

U2 - 10.1002/pssb.201700255

DO - 10.1002/pssb.201700255

M3 - Article

AN - SCOPUS:85040795019

VL - 255

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 1

M1 - 1700255

ER -