Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Influence of Substrate Temperature and Sulfurization on Sputtered Cu2SnGe(S,Se)(3) Thin Films for Solar Cell Application. / Dubey, Mayank; Siddharth, Gaurav; Singh, Ruchi и др.
в: IEEE Transactions on Electron Devices, Том 69, № 5, 01.05.2022, стр. 2488-2493.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Influence of Substrate Temperature and Sulfurization on Sputtered Cu2SnGe(S,Se)(3) Thin Films for Solar Cell Application
AU - Dubey, Mayank
AU - Siddharth, Gaurav
AU - Singh, Ruchi
AU - Patel, Chandrabhan
AU - Kumar, Sanjay
AU - Htay, Myo Than
AU - Atuchin, Victor V.
AU - Mukherjee, Shaibal
N1 - This work was supported by the DST-RSF Project under Grant DST/INT/RUS/RSF/P-20. The work of S. Kumar was supported by DST through Inspire Fellowship for the Ph.D. program under Grant IF170791. The work of R. Singh was supported by UGC through the UGC-NET SRF Fellowship. The work of V.V. Atuchin was supported by the Ministry of Science and Higher Education of Russia under Project 075-15-2020-797 (13.1902.21.0024).
PY - 2022/5/1
Y1 - 2022/5/1
N2 - This work presents the influence of substrate temperature (Tsub) and post-sulfurization on compositional, structural, electrical, and optical properties of dual-ion beam sputtering (DIBS)-grown Cu2(Sn,Ge)(S,Se)3 (CTGSSe) thin films grown on a soda-lime glass (SLG) substrate using a single target. Post-sulfurization of CTGSSe thin films is carried out in a quartz tube chemical vapor deposition (CVD) system. X-ray diffraction (XRD) analysis reveals that the crystal structure of CTGSSe thin films is preferentially tetragonal with (112) and (204) lattice planes at 2θ values of 27.3° and 47.3°, respectively. Field-emission scanning electron microscopy (SEM) has emphasized that the high Tsubgrowth resulted in a larger grain size of 87 nm and better thin-film morphology. Spectroscopic ellipsometry (SE) analysis shows the bandgap values of 1.46-1.62 eV by varying Tsub from room temperature (RT) to 300 °C. Furthermore, the bandgap widens from 1.56 to 1.64 eV in the CTGSSe thin films due to post-sulfurization.
AB - This work presents the influence of substrate temperature (Tsub) and post-sulfurization on compositional, structural, electrical, and optical properties of dual-ion beam sputtering (DIBS)-grown Cu2(Sn,Ge)(S,Se)3 (CTGSSe) thin films grown on a soda-lime glass (SLG) substrate using a single target. Post-sulfurization of CTGSSe thin films is carried out in a quartz tube chemical vapor deposition (CVD) system. X-ray diffraction (XRD) analysis reveals that the crystal structure of CTGSSe thin films is preferentially tetragonal with (112) and (204) lattice planes at 2θ values of 27.3° and 47.3°, respectively. Field-emission scanning electron microscopy (SEM) has emphasized that the high Tsubgrowth resulted in a larger grain size of 87 nm and better thin-film morphology. Spectroscopic ellipsometry (SE) analysis shows the bandgap values of 1.46-1.62 eV by varying Tsub from room temperature (RT) to 300 °C. Furthermore, the bandgap widens from 1.56 to 1.64 eV in the CTGSSe thin films due to post-sulfurization.
KW - Cu-2(Sn,Ge)(S,Se)(3) (CTGSSe)
KW - dual-ion beam sputtering (DIBS)
KW - substrate temperature
KW - sulfurization
KW - SELENIZATION
KW - FABRICATION
KW - LAYER
KW - Substrate temperature
KW - Sulfurization
KW - Cu (Sn,Ge)(S,Se) (CTGSSe)
KW - Dual-ion beam sputtering (DIBS)
UR - http://www.scopus.com/inward/record.url?scp=85129265500&partnerID=8YFLogxK
U2 - 10.1109/TED.2022.3159509
DO - 10.1109/TED.2022.3159509
M3 - Article
VL - 69
SP - 2488
EP - 2493
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 5
ER -
ID: 35893877