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Influence of post-deposition annealing under magnetic field on the structure of phthalocyanine thin films. / Basova, Tamara V.; Jushina, Irina V.; Ray, Asim K.

в: Journal of Materials Science: Materials in Electronics, Том 26, № 7, 24.07.2015, стр. 4716-4721.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Basova, TV, Jushina, IV & Ray, AK 2015, 'Influence of post-deposition annealing under magnetic field on the structure of phthalocyanine thin films', Journal of Materials Science: Materials in Electronics, Том. 26, № 7, стр. 4716-4721. https://doi.org/10.1007/s10854-015-2924-4

APA

Basova, T. V., Jushina, I. V., & Ray, A. K. (2015). Influence of post-deposition annealing under magnetic field on the structure of phthalocyanine thin films. Journal of Materials Science: Materials in Electronics, 26(7), 4716-4721. https://doi.org/10.1007/s10854-015-2924-4

Vancouver

Basova TV, Jushina IV, Ray AK. Influence of post-deposition annealing under magnetic field on the structure of phthalocyanine thin films. Journal of Materials Science: Materials in Electronics. 2015 июль 24;26(7):4716-4721. doi: 10.1007/s10854-015-2924-4

Author

Basova, Tamara V. ; Jushina, Irina V. ; Ray, Asim K. / Influence of post-deposition annealing under magnetic field on the structure of phthalocyanine thin films. в: Journal of Materials Science: Materials in Electronics. 2015 ; Том 26, № 7. стр. 4716-4721.

BibTeX

@article{3369d0239d4b4baebf83ec26a7e12f45,
title = "Influence of post-deposition annealing under magnetic field on the structure of phthalocyanine thin films",
abstract = "A comparative analysis of the influence of post deposition annealing process without and under applied magnetic field of 1 T, on structure and morphology of VOPcF16 films, has been carried out. The phase transition of VOPcF16 film upon its annealing under applied magnetic film was studied by the methods of UV–Visible and Raman spectroscopies as well as atomic force microscopy. It was shown that the temperature of the phase transition of VOPcF16 decreases from 160 to 100 °C, when magnetic field is applied during post deposition annealing. The formation of VOPcF16 films with elongated crystallites oriented preferably in one direction was observed after their annealing in magnetic field. The current–voltage characteristic measurements demonstrated an increase in the lateral conductivity for the films annealed under applied magnetic field in comparison with the films annealed without magnetic field.",
author = "Basova, {Tamara V.} and Jushina, {Irina V.} and Ray, {Asim K.}",
year = "2015",
month = jul,
day = "24",
doi = "10.1007/s10854-015-2924-4",
language = "English",
volume = "26",
pages = "4716--4721",
journal = "Journal of Materials Science: Materials in Electronics",
issn = "0957-4522",
publisher = "Springer New York",
number = "7",

}

RIS

TY - JOUR

T1 - Influence of post-deposition annealing under magnetic field on the structure of phthalocyanine thin films

AU - Basova, Tamara V.

AU - Jushina, Irina V.

AU - Ray, Asim K.

PY - 2015/7/24

Y1 - 2015/7/24

N2 - A comparative analysis of the influence of post deposition annealing process without and under applied magnetic field of 1 T, on structure and morphology of VOPcF16 films, has been carried out. The phase transition of VOPcF16 film upon its annealing under applied magnetic film was studied by the methods of UV–Visible and Raman spectroscopies as well as atomic force microscopy. It was shown that the temperature of the phase transition of VOPcF16 decreases from 160 to 100 °C, when magnetic field is applied during post deposition annealing. The formation of VOPcF16 films with elongated crystallites oriented preferably in one direction was observed after their annealing in magnetic field. The current–voltage characteristic measurements demonstrated an increase in the lateral conductivity for the films annealed under applied magnetic field in comparison with the films annealed without magnetic field.

AB - A comparative analysis of the influence of post deposition annealing process without and under applied magnetic field of 1 T, on structure and morphology of VOPcF16 films, has been carried out. The phase transition of VOPcF16 film upon its annealing under applied magnetic film was studied by the methods of UV–Visible and Raman spectroscopies as well as atomic force microscopy. It was shown that the temperature of the phase transition of VOPcF16 decreases from 160 to 100 °C, when magnetic field is applied during post deposition annealing. The formation of VOPcF16 films with elongated crystallites oriented preferably in one direction was observed after their annealing in magnetic field. The current–voltage characteristic measurements demonstrated an increase in the lateral conductivity for the films annealed under applied magnetic field in comparison with the films annealed without magnetic field.

UR - http://www.scopus.com/inward/record.url?scp=84931568279&partnerID=8YFLogxK

U2 - 10.1007/s10854-015-2924-4

DO - 10.1007/s10854-015-2924-4

M3 - Article

AN - SCOPUS:84931568279

VL - 26

SP - 4716

EP - 4721

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 7

ER -

ID: 25435704