TY - JOUR

T1 - Influence of formation conditions and annealing on the parameters of Pt/InAlAs Schottky barriers

AU - Genze, Ilya Yu.

AU - Aksenov, Maxim S.

AU - Paramonova, Maria A.

AU - Dmitriev, Dmitry V.

AU - Zhuravlev, Konstantin S.

PY - 2024/2/1

Y1 - 2024/2/1

N2 - This paper describes a study of the Au/Pt/Ti/Pt/i(n)-In0.52Al0.48As(001) mesa Schottky barriers formed after ion and liquid treatment of an InAlAs surface, followed by annealing at temperatures of 300 degrees C, 350 degrees C, and 400 degrees C for durations up to 16 min. Aim of study. The aim is to determine the effect of preliminary ion treatment of the InAlAs surface and annealing on the parameters (barrier height and ideality factor) of Pt/n-InAlAs Schottky barriers. Method. The Schottky-barrier parameters were determined by analyzing the current-voltage characteristics within the framework of thermionic emission theory. Main results. The barrier height and ideality factor were measured as a function of annealing time and temperature. It was shown that a combination of ion-beam etching and annealing can be used to obtain a higher barrier height (0.83 eV) and lower ideality factor (1.08) than can be obtained using liquid surface treatment alone. Practical significance. The results obtained may be useful in improving the manufacturing technology for InAlAs Schottky barriers.

AB - This paper describes a study of the Au/Pt/Ti/Pt/i(n)-In0.52Al0.48As(001) mesa Schottky barriers formed after ion and liquid treatment of an InAlAs surface, followed by annealing at temperatures of 300 degrees C, 350 degrees C, and 400 degrees C for durations up to 16 min. Aim of study. The aim is to determine the effect of preliminary ion treatment of the InAlAs surface and annealing on the parameters (barrier height and ideality factor) of Pt/n-InAlAs Schottky barriers. Method. The Schottky-barrier parameters were determined by analyzing the current-voltage characteristics within the framework of thermionic emission theory. Main results. The barrier height and ideality factor were measured as a function of annealing time and temperature. It was shown that a combination of ion-beam etching and annealing can be used to obtain a higher barrier height (0.83 eV) and lower ideality factor (1.08) than can be obtained using liquid surface treatment alone. Practical significance. The results obtained may be useful in improving the manufacturing technology for InAlAs Schottky barriers.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85199314461&origin=inward&txGid=ae602f3b5e344ad9d099ed9de0693b1a

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:001267515000004

UR - https://www.mendeley.com/catalogue/b743a10c-9702-3fec-82c4-e8dcc5d3a19b/

U2 - 10.1364/jot.91.000083

DO - 10.1364/jot.91.000083

M3 - Article

VL - 91

SP - 83

EP - 85

JO - Journal of Optical Technology (A Translation of Opticheskii Zhurnal)

JF - Journal of Optical Technology (A Translation of Opticheskii Zhurnal)

SN - 1070-9762

IS - 2

ER -