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Increase in the Photocurrent in Layers of Ge/Si Quantum Dots by Modes of a Two-Dimensional Photonic Crystal. / Yakimov, A. I.; Bloshkin, A. A.; Kirienko, V. V. и др.

в: JETP Letters, Том 113, № 8, 04.2021, стр. 498-503.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Yakimov, AI, Bloshkin, AA, Kirienko, VV, Dvurechenskii, AV & Utkin, DE 2021, 'Increase in the Photocurrent in Layers of Ge/Si Quantum Dots by Modes of a Two-Dimensional Photonic Crystal', JETP Letters, Том. 113, № 8, стр. 498-503. https://doi.org/10.1134/S0021364021080129

APA

Yakimov, A. I., Bloshkin, A. A., Kirienko, V. V., Dvurechenskii, A. V., & Utkin, D. E. (2021). Increase in the Photocurrent in Layers of Ge/Si Quantum Dots by Modes of a Two-Dimensional Photonic Crystal. JETP Letters, 113(8), 498-503. https://doi.org/10.1134/S0021364021080129

Vancouver

Yakimov AI, Bloshkin AA, Kirienko VV, Dvurechenskii AV, Utkin DE. Increase in the Photocurrent in Layers of Ge/Si Quantum Dots by Modes of a Two-Dimensional Photonic Crystal. JETP Letters. 2021 апр.;113(8):498-503. doi: 10.1134/S0021364021080129

Author

Yakimov, A. I. ; Bloshkin, A. A. ; Kirienko, V. V. и др. / Increase in the Photocurrent in Layers of Ge/Si Quantum Dots by Modes of a Two-Dimensional Photonic Crystal. в: JETP Letters. 2021 ; Том 113, № 8. стр. 498-503.

BibTeX

@article{d206c90732c04e86aeea0ff827e99600,
title = "Increase in the Photocurrent in Layers of Ge/Si Quantum Dots by Modes of a Two-Dimensional Photonic Crystal",
abstract = "It has been found that the introduction of layers of Ge/Si quantum dots in a two-dimensional photonic crystal leads to a strong (up to a factor of 5) increase in the photocurrent in the near infrared range. The photonic crystal is a regular triangular array of holes in a Si/Ge/Si heterostructure grown on a silicon-on-insulator substrate. The results have been explained by the excitation of planar modes of the photonic crystal, which propagate along the Ge/Si layers and effectively interact with interband transitions in quantum dots, by the incident light wave.",
author = "Yakimov, {A. I.} and Bloshkin, {A. A.} and Kirienko, {V. V.} and Dvurechenskii, {A. V.} and Utkin, {D. E.}",
note = "Funding Information: We are grateful to V.A. Armbrister for heterostructures grown by the molecular beam epitaxy method. Electron lithography was performed at Research Center, Faculty of Physics, Novosibirsk State University. Funding Information: This study was supported by the Ministry of Science and Higher Education of the Russian Federation (project no. 075-15-2020-797 (13.1902.21.0024)). Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Inc. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2021",
month = apr,
doi = "10.1134/S0021364021080129",
language = "English",
volume = "113",
pages = "498--503",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "8",

}

RIS

TY - JOUR

T1 - Increase in the Photocurrent in Layers of Ge/Si Quantum Dots by Modes of a Two-Dimensional Photonic Crystal

AU - Yakimov, A. I.

AU - Bloshkin, A. A.

AU - Kirienko, V. V.

AU - Dvurechenskii, A. V.

AU - Utkin, D. E.

N1 - Funding Information: We are grateful to V.A. Armbrister for heterostructures grown by the molecular beam epitaxy method. Electron lithography was performed at Research Center, Faculty of Physics, Novosibirsk State University. Funding Information: This study was supported by the Ministry of Science and Higher Education of the Russian Federation (project no. 075-15-2020-797 (13.1902.21.0024)). Publisher Copyright: © 2021, Pleiades Publishing, Inc. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/4

Y1 - 2021/4

N2 - It has been found that the introduction of layers of Ge/Si quantum dots in a two-dimensional photonic crystal leads to a strong (up to a factor of 5) increase in the photocurrent in the near infrared range. The photonic crystal is a regular triangular array of holes in a Si/Ge/Si heterostructure grown on a silicon-on-insulator substrate. The results have been explained by the excitation of planar modes of the photonic crystal, which propagate along the Ge/Si layers and effectively interact with interband transitions in quantum dots, by the incident light wave.

AB - It has been found that the introduction of layers of Ge/Si quantum dots in a two-dimensional photonic crystal leads to a strong (up to a factor of 5) increase in the photocurrent in the near infrared range. The photonic crystal is a regular triangular array of holes in a Si/Ge/Si heterostructure grown on a silicon-on-insulator substrate. The results have been explained by the excitation of planar modes of the photonic crystal, which propagate along the Ge/Si layers and effectively interact with interband transitions in quantum dots, by the incident light wave.

UR - http://www.scopus.com/inward/record.url?scp=85109179540&partnerID=8YFLogxK

U2 - 10.1134/S0021364021080129

DO - 10.1134/S0021364021080129

M3 - Article

AN - SCOPUS:85109179540

VL - 113

SP - 498

EP - 503

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 8

ER -

ID: 29126280