TY - JOUR

T1 - In situ reflection electron microscopy for investigation of surface processes on Bi2Se3(0001)

AU - Ponomarev, S. A.

AU - Rogilo, D. I.

AU - Kurus, N. N.

AU - Basalaeva, L. S.

AU - Kokh, K. A.

AU - Milekhin, A. G.

AU - Sheglov, D. V.

AU - Latyshev, A. V.

N1 - Funding Information: sublimation and growth was financially supported by Russian Science Foundation [grant number 19-72-30023], investigation of In2Se3 growth was financially supported by Russian Science Foundation [grant number 18-72-10063]. Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2021/9/13

Y1 - 2021/9/13

N2 - The sublimation and van der Waals (vdW) epitaxy on Bi2Se3(0001) surface have been first visualized using in situ reflection electron microscopy. When Bi2Se3(0001) surface was exposed to a Se molecular beam (up to 0.1 nm/s) and heated to ∼400 C, we observed ascending motion of atomic steps corresponding to congruent Bi2Se3 sublimation. During the sublimation, grooves made by probe lithography act as sources of atomic steps: groove depth increases and generates atomic steps that move in the ascending direction away from the source. We used this phenomenon to create self-organized regularly-spaced zigzag atomic steps having 1 nm height on the Bi2Se3(0001) surface. The deposition of Bi (up to ∼0.01 nm/s) onto the Bi2Se3(0001) surface at constant Se flux (up to ∼0.1 nm/s) reversed the direction of the step flow, and vdW epitaxy was observed. The deposition of In and Se onto the Bi2Se3(0001) surface at ∼400 C led to the epitaxial growth of layered In2Se3. This vdW heteroepitaxy started with 2D island nucleation and, after 3-5 nm growth, continued with a screw-dislocation-driven formation of 3D islands. Ex situ Raman scattering measurements have shown that the grown 20-nm-thick In2Se3 film exhibits vibrational modes that originate from the β-In2Se3 crystal phase.

AB - The sublimation and van der Waals (vdW) epitaxy on Bi2Se3(0001) surface have been first visualized using in situ reflection electron microscopy. When Bi2Se3(0001) surface was exposed to a Se molecular beam (up to 0.1 nm/s) and heated to ∼400 C, we observed ascending motion of atomic steps corresponding to congruent Bi2Se3 sublimation. During the sublimation, grooves made by probe lithography act as sources of atomic steps: groove depth increases and generates atomic steps that move in the ascending direction away from the source. We used this phenomenon to create self-organized regularly-spaced zigzag atomic steps having 1 nm height on the Bi2Se3(0001) surface. The deposition of Bi (up to ∼0.01 nm/s) onto the Bi2Se3(0001) surface at constant Se flux (up to ∼0.1 nm/s) reversed the direction of the step flow, and vdW epitaxy was observed. The deposition of In and Se onto the Bi2Se3(0001) surface at ∼400 C led to the epitaxial growth of layered In2Se3. This vdW heteroepitaxy started with 2D island nucleation and, after 3-5 nm growth, continued with a screw-dislocation-driven formation of 3D islands. Ex situ Raman scattering measurements have shown that the grown 20-nm-thick In2Se3 film exhibits vibrational modes that originate from the β-In2Se3 crystal phase.

UR - http://www.scopus.com/inward/record.url?scp=85116761829&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1984/1/012016

DO - 10.1088/1742-6596/1984/1/012016

M3 - Conference article

AN - SCOPUS:85116761829

VL - 1984

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012016

T2 - SPb Photonic, Optoelectronic and Electronic Materials, SPb-POEM 2021

Y2 - 25 May 2021 through 28 May 2021

ER -