Standard

Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi2Se3 and Sb2Te3 Topological Insulators. / Surnin, Yu A.; Klimovskikh, I. I.; Sostina, D. M. и др.

в: Journal of Experimental and Theoretical Physics, Том 126, № 4, 01.04.2018, стр. 535-540.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Surnin, YA, Klimovskikh, II, Sostina, DM, Kokh, KA, Tereshchenko, OE & Shikin, AM 2018, 'Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi2Se3 and Sb2Te3 Topological Insulators', Journal of Experimental and Theoretical Physics, Том. 126, № 4, стр. 535-540. https://doi.org/10.1134/S1063776118040088

APA

Surnin, Y. A., Klimovskikh, I. I., Sostina, D. M., Kokh, K. A., Tereshchenko, O. E., & Shikin, A. M. (2018). Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi2Se3 and Sb2Te3 Topological Insulators. Journal of Experimental and Theoretical Physics, 126(4), 535-540. https://doi.org/10.1134/S1063776118040088

Vancouver

Surnin YA, Klimovskikh II, Sostina DM, Kokh KA, Tereshchenko OE, Shikin AM. Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi2Se3 and Sb2Te3 Topological Insulators. Journal of Experimental and Theoretical Physics. 2018 апр. 1;126(4):535-540. doi: 10.1134/S1063776118040088

Author

Surnin, Yu A. ; Klimovskikh, I. I. ; Sostina, D. M. и др. / Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi2Se3 and Sb2Te3 Topological Insulators. в: Journal of Experimental and Theoretical Physics. 2018 ; Том 126, № 4. стр. 535-540.

BibTeX

@article{07ae142cfaa542c5b9c21e3e09932325,
title = "Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi2Se3 and Sb2Te3 Topological Insulators",
abstract = "The effect of an ultrathin Pb film deposited on the surface of Bi2Se3 and Sb2Te3 compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are revealed: formation of two-dimensional quantum-well states in the near-surface region, an increase in the binding energy of the Dirac cone and the core levels, and a simultaneous electronic states intensity redistribution in the system in photoemission spectra. The results obtained show that topological states may coexist at the interface between studied materials and a superconductor, which seems to be promising for application in quantum computers.",
author = "Surnin, {Yu A.} and Klimovskikh, {I. I.} and Sostina, {D. M.} and Kokh, {K. A.} and Tereshchenko, {O. E.} and Shikin, {A. M.}",
note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Inc.",
year = "2018",
month = apr,
day = "1",
doi = "10.1134/S1063776118040088",
language = "English",
volume = "126",
pages = "535--540",
journal = "Journal of Experimental and Theoretical Physics",
issn = "1063-7761",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "4",

}

RIS

TY - JOUR

T1 - Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi2Se3 and Sb2Te3 Topological Insulators

AU - Surnin, Yu A.

AU - Klimovskikh, I. I.

AU - Sostina, D. M.

AU - Kokh, K. A.

AU - Tereshchenko, O. E.

AU - Shikin, A. M.

N1 - Publisher Copyright: © 2018, Pleiades Publishing, Inc.

PY - 2018/4/1

Y1 - 2018/4/1

N2 - The effect of an ultrathin Pb film deposited on the surface of Bi2Se3 and Sb2Te3 compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are revealed: formation of two-dimensional quantum-well states in the near-surface region, an increase in the binding energy of the Dirac cone and the core levels, and a simultaneous electronic states intensity redistribution in the system in photoemission spectra. The results obtained show that topological states may coexist at the interface between studied materials and a superconductor, which seems to be promising for application in quantum computers.

AB - The effect of an ultrathin Pb film deposited on the surface of Bi2Se3 and Sb2Te3 compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are revealed: formation of two-dimensional quantum-well states in the near-surface region, an increase in the binding energy of the Dirac cone and the core levels, and a simultaneous electronic states intensity redistribution in the system in photoemission spectra. The results obtained show that topological states may coexist at the interface between studied materials and a superconductor, which seems to be promising for application in quantum computers.

UR - http://www.scopus.com/inward/record.url?scp=85048200284&partnerID=8YFLogxK

U2 - 10.1134/S1063776118040088

DO - 10.1134/S1063776118040088

M3 - Article

AN - SCOPUS:85048200284

VL - 126

SP - 535

EP - 540

JO - Journal of Experimental and Theoretical Physics

JF - Journal of Experimental and Theoretical Physics

SN - 1063-7761

IS - 4

ER -

ID: 13794955