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Hot electrons in silicon oxide. / Gritsenko, V. A.

в: Physics-Uspekhi, Том 60, № 9, 09.2017, стр. 902-910.

Результаты исследований: Научные публикации в периодических изданиях › обзорная статья › Рецензирование

Harvard

Gritsenko, VA 2017, 'Hot electrons in silicon oxide', Physics-Uspekhi, Том. 60, № 9, стр. 902-910. https://doi.org/10.3367/UFNe.2016.12.038008

APA

Gritsenko, V. A. (2017). Hot electrons in silicon oxide. Physics-Uspekhi, 60(9), 902-910. https://doi.org/10.3367/UFNe.2016.12.038008

Vancouver

Gritsenko VA. Hot electrons in silicon oxide. Physics-Uspekhi. 2017 сент.;60(9):902-910. doi: 10.3367/UFNe.2016.12.038008

Author

Gritsenko, V. A. / Hot electrons in silicon oxide. в: Physics-Uspekhi. 2017 ; Том 60, № 9. стр. 902-910.

BibTeX

@article{b1301332e1754f27bd2e88acdb1de9d4,
title = "Hot electrons in silicon oxide",
abstract = "One particular application of amorphous silicon oxide (SiO2), a material crucial for silicon device technology and design, is as a flash memory tunnel dielectric. The breakdown field of SiO2 exceeds 107 V cm{\"y}1. Strong electric fields in SiO2 give rise to phenomena that do not occur in crystalline semicon-ductors. In relatively weak electric fields (104{\"y}106 Vcm{\"y}1), the electron distribution function is determined by the scattering of electrons on longitudinal optical phonons. In high fields (in excess of 106 V cm{\"y}1), the distribution function is determined by electron-acoustic phonon scattering.",
keywords = "Hot electrons, Optical phonons, Scattering, Silicon oxide, FIELD, optical phonons, DIOXIDE FILMS, NITRIDE, MONTE-CARLO, hot electrons, TRANSPORT, scattering, HOLE INJECTION, silicon oxide, EMISSION, IONIZATION, SCATTERING, SIO2",
author = "Gritsenko, {V. A.}",
year = "2017",
month = sep,
doi = "10.3367/UFNe.2016.12.038008",
language = "English",
volume = "60",
pages = "902--910",
journal = "Physics-Uspekhi",
issn = "1063-7869",
publisher = "Turpion Ltd.",
number = "9",

}

RIS

TY - JOUR

T1 - Hot electrons in silicon oxide

AU - Gritsenko, V. A.

PY - 2017/9

Y1 - 2017/9

N2 - One particular application of amorphous silicon oxide (SiO2), a material crucial for silicon device technology and design, is as a flash memory tunnel dielectric. The breakdown field of SiO2 exceeds 107 V cmÿ1. Strong electric fields in SiO2 give rise to phenomena that do not occur in crystalline semicon-ductors. In relatively weak electric fields (104ÿ106 Vcmÿ1), the electron distribution function is determined by the scattering of electrons on longitudinal optical phonons. In high fields (in excess of 106 V cmÿ1), the distribution function is determined by electron-acoustic phonon scattering.

AB - One particular application of amorphous silicon oxide (SiO2), a material crucial for silicon device technology and design, is as a flash memory tunnel dielectric. The breakdown field of SiO2 exceeds 107 V cmÿ1. Strong electric fields in SiO2 give rise to phenomena that do not occur in crystalline semicon-ductors. In relatively weak electric fields (104ÿ106 Vcmÿ1), the electron distribution function is determined by the scattering of electrons on longitudinal optical phonons. In high fields (in excess of 106 V cmÿ1), the distribution function is determined by electron-acoustic phonon scattering.

KW - Hot electrons

KW - Optical phonons

KW - Scattering

KW - Silicon oxide

KW - FIELD

KW - optical phonons

KW - DIOXIDE FILMS

KW - NITRIDE

KW - MONTE-CARLO

KW - hot electrons

KW - TRANSPORT

KW - scattering

KW - HOLE INJECTION

KW - silicon oxide

KW - EMISSION

KW - IONIZATION

KW - SCATTERING

KW - SIO2

UR - http://www.scopus.com/inward/record.url?scp=85040973769&partnerID=8YFLogxK

U2 - 10.3367/UFNe.2016.12.038008

DO - 10.3367/UFNe.2016.12.038008

M3 - Review article

AN - SCOPUS:85040973769

VL - 60

SP - 902

EP - 910

JO - Physics-Uspekhi

JF - Physics-Uspekhi

SN - 1063-7869

IS - 9

ER -

ID: 10455258